Thexyl C.sub.1 -C.sub.4 alkyl dialkoxy silane
    1.
    发明授权
    Thexyl C.sub.1 -C.sub.4 alkyl dialkoxy silane 失效
    THEXYL C1-C4ALKYL DIALKOXY SILANE

    公开(公告)号:US5136072A

    公开(公告)日:1992-08-04

    申请号:US798515

    申请日:1991-11-26

    IPC分类号: C07F7/18 C08F4/602

    CPC分类号: C07F7/184

    摘要: Thexyl (C.sub.1 -C.sub.4) alkyl dialkoxy silanes are proposed as a class of novel organosilicon compounds such as thexyl methyl dimethoxy silane and thexyl n-butyl dimethoxy silane. These silane compounds can be synthesized by several different routes. For example, thexyl methyl dimethoxy silane is prepared starting from methyl phenyl chlorosilane which is subjected to the hydrosilation reaction with 2,3-dimethyl-2-butene to introduce a thexyl group and the compound is converted by the reaction with hydrogen chloride into thexyl methyl dichlorosilane which is methoxylated by the reaction with methyl alcohol.

    Thexyl trialkoxy silane
    3.
    发明授权
    Thexyl trialkoxy silane 失效
    THEXYL TRIALKOXY SILANE

    公开(公告)号:US5136073A

    公开(公告)日:1992-08-04

    申请号:US796360

    申请日:1991-11-22

    IPC分类号: C07F7/18

    CPC分类号: C07F7/1836

    摘要: Several thexyl trialkoxy silanes as a novel class of organosilicon compounds were synthesized by the reaction of dehydrochlorination condensation between thexyl trichlorosilane and an alcohol, e.g., methyl, ethyl, isopropyl and isobutyl alcohols, and characterized by the analytical data. These compounds are useful as an intermediate in the synthetic preparation of other organosilicon compounds, starting material of various silicones, surface-treatment agent of inorganic materials and additive in complex catalysts.

    N-tert-butyldialkylsilylmaleimide and its manufacture
    4.
    发明授权
    N-tert-butyldialkylsilylmaleimide and its manufacture 失效
    N-叔丁基二甲基硅氧烷和其制造方法

    公开(公告)号:US5194627A

    公开(公告)日:1993-03-16

    申请号:US882899

    申请日:1992-05-14

    IPC分类号: C07F7/10

    CPC分类号: C07F7/10

    摘要: An N-tert-butyldialkylsilylmaleimide represented by the following general formula: ##STR1## wherein R's represent C.sub.1 to C.sub.5 alkyl groups which may be the same or different and a method of producing the compound. Said N-tert-butyldialkylsilylmaleimide is useful as a silylating agent, which does not produce hydrogen chloride or the like as a by-product and therefore does not require to use a neutralizing agent additionally. Further this compound is useful as a compound which provides a maleimido group.

    Method for the preparation of cyclopentyl trichlorosilane
    5.
    发明授权
    Method for the preparation of cyclopentyl trichlorosilane 失效
    环丙基三氯硅烷的制备方法

    公开(公告)号:US5084591A

    公开(公告)日:1992-01-28

    申请号:US710870

    申请日:1991-06-06

    CPC分类号: C07F7/14

    摘要: Cyclopentyl trichlorosilane can be efficiently prepared by the hydrosiliaton reaction of trichlorosilane and cyclopentene which can proceed only to a very low extent by the use of conventional platinum catalysts effective in other hydrosilation reactions. Thus, an equimolar mixture of the reactants is heated in the presence of a chlorine-deficient chloroplatinic acid catalyst of a specified chlorine:platinum atomic ratio at a temperature higher than the boiling point of the mixture under normal pressure in a pressurizable vessel so that the desired product can be obtained in a yield of 90% of the theoretical value or higher.

    Production method of resist composition for lithography
    7.
    发明授权
    Production method of resist composition for lithography 有权
    光刻抗蚀剂组合物的制备方法

    公开(公告)号:US08822128B2

    公开(公告)日:2014-09-02

    申请号:US13604270

    申请日:2012-09-05

    IPC分类号: G03F7/004 B01D37/02 G03F7/075

    摘要: The present invention provides a production method of a resist composition for lithography, comprising, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, a colloidal, sol is passed through the filter from upstream thereof to adsorb colloidal particles to the filter, and then the resist composition for lithography is passed through the filter, thereby removing fine particles in the resist composition for lithography therefrom. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.

    摘要翻译: 本发明提供了一种用于光刻的抗蚀剂组合物的制备方法,至少包括:通过过滤器过滤用于光刻的抗蚀剂组合物的过滤步骤,其中在过滤步骤中,使胶态溶胶通过过滤器 上游,将胶体粒子吸附到过滤器上,然后将光刻用抗蚀剂组合物通过过滤器,从而除去抗蚀剂组合物中的微细颗粒,以进行光刻。 可以提供一种用于光刻的抗蚀剂组合物,其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。

    Sacrificial film-forming composition, patterning process, sacrificial film and removal method
    8.
    发明授权
    Sacrificial film-forming composition, patterning process, sacrificial film and removal method 有权
    牺牲成膜组合物,图案化工艺,牺牲膜和去除方法

    公开(公告)号:US07485690B2

    公开(公告)日:2009-02-03

    申请号:US11148380

    申请日:2005-06-09

    IPC分类号: C08G77/08

    摘要: A sacrificial film-forming composition is provided comprising (A) a silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formulae (1) and (2): X—Y—SiZ3  (1) RnSiZ4-n  (2) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group such as an unsubstituted hydroxyl group or a substituted or unsubstituted epoxy, acyloxy or acryloxy group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, and n is an integer of 0 to 3, the silicone resin being capable of crosslinking reaction by the crosslinkable organofunctional group in formula (1), (B) a crosslinking agent, (C) an acid generator, and (D) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

    摘要翻译: 提供牺牲性成膜组合物,其包含(A)作为具有式(1)和(2)的可水解硅烷的共水解缩合物的硅氧烷树脂:<?在线配方说明=“在线配方” end =“lead”?> XY-SiZ3(1)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line formula end =“lead”?> RnSiZ4-n(2)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中Z是可水解基团,X是可交联的有机官能团,例如 未取代的羟基或取代或未取代的环氧基,酰氧基或丙烯酰氧基,Y为单键或二价烃基,R为氢或一价烃基,n为0〜3的整数,有机硅树脂为 能够通过式(1)中的交联性有机官能团交联反应,(B)交联剂,(C)酸产生剂和(D)有机溶剂进行交联反应。 该组合物具有提高的储存稳定性,填充性能,粘附性和涂层均匀性,足以形成有效地溶解在剥离溶液中的牺牲膜。

    Porous film-forming composition, patterning process, and porous sacrificial film
    9.
    发明授权
    Porous film-forming composition, patterning process, and porous sacrificial film 有权
    多孔成膜组合物,图案化工艺和多孔牺牲膜

    公开(公告)号:US07417104B2

    公开(公告)日:2008-08-26

    申请号:US11148371

    申请日:2005-06-09

    IPC分类号: C08G77/08 C08L83/04

    摘要: A porous film-forming composition is provided comprising (A) a polymer obtained by hydrolytic condensation of a hydrolyzable silane having formula (1): R1n—Si—R24-n  (1) wherein R1 is a monovalent organic group or hydrogen, R2 is a hydrolyzable group or a hydroxyl group and n is an integer of 0 to 3, a hydrolyzate thereof or a partial condensate thereof, with the proviso that at least one silicon compound having an organic crosslinkable group as R1 is included, the polymer being capable of crosslinking reaction by the organic crosslinkable group, and (B) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is dissolvable in a stripping solution.

    摘要翻译: 提供了一种多孔成膜组合物,其包含(A)通过具有式(1)的可水解硅烷的水解缩合得到的聚合物:<?in-line-formula description =“In-line Formulas”end =“lead” (1)<β在线公式描述中的一个或多个(1) 其中R 1是一价有机基团或氢,R 2是可水解基团或羟基,并且其中R 1是一价有机基团或氢原子, n为0〜3的整数,其水解物或其部分缩合物,条件是含有至少一种具有有机交联基团的硅化合物为R 1,所述聚合物能够 通过有机交联基团进行交联反应,和(B)有机溶剂。 该组合物具有提高的储存稳定性,填充性能,粘合性和涂层均匀性,足以形成可溶于剥离溶液中的牺牲膜。

    Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
    10.
    发明授权
    Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
    用于形成多孔膜的组合物,多孔膜及其形成方法,层间绝缘膜和半导体器件

    公开(公告)号:US07357961B2

    公开(公告)日:2008-04-15

    申请号:US10819544

    申请日:2004-04-07

    IPC分类号: C08G77/06 B05D3/02

    摘要: Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a  (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c  (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.

    摘要翻译: 本发明提供一种成膜组合物,其可以制造具有高强度和低介电常数的膜,其制造方法,多孔膜形成方法,多孔膜和在内部含有多孔膜的半导体器件。 更具体地提供了一种成膜组合物,其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物,其中可水解硅烷化合物选自由式(1) )和(2):<?in-line-formula description =“In-line Formulas”end =“lead”?(R&lt; 1&gt;)&lt; 4-a(1)<?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula- 公式描述=“在线公式”end =“lead”?>(R 3)3(R 5)3 -b-Si-R 7 -Si(R 6)3-c(R 4) )(2)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中R 1,R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2,R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数, b和c各自表示1或2的整数。