公开(公告)号：US07687377B2

公开(公告)日：2010-03-30

申请号：US12398997

申请日：2009-03-05

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: H01L47/00

CPC classification number: H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/1691

Abstract: In a method of fabricating a phase change memory (PCM) device, a substrate having bottom electrodes formed therein is provided. A first dielectric layer having cup-shaped thermal electrodes is formed over the substrate. Second dielectric layers are formed on the substrate. Stacked structures are formed on the substrate. A PC material film is formed over the substrate and covers the stacked structures and the second dielectric layers. The PC material film is anisotropically etched to form PC material spacers on sidewalls of the stacked structures, and each of the PC material spacers physically and electrically contacts each of the cup-shaped thermal electrodes and top electrodes. The PC material spacers include phase change material. The PC material spacers are over-etched to remove the PC material film on the sidewalls of the second dielectric layers.

Abstract translation: 在制造相变存储器（PCM）器件的方法中，提供了形成有底电极的衬底。 在基板上形成具有杯形热电极的第一电介质层。 在基板上形成第二电介质层。 在基板上形成堆叠结构。 PC材料膜形成在衬底上并覆盖堆叠结构和第二介质层。 PC材料膜被各向异性蚀刻以在层叠结构的侧壁上形成PC材料隔离物，并且每个PC材料隔离物物理上和电接触每个杯形热电极和顶部电极。 PC材料间隔物包括相变材料。 PC材料间隔物被过蚀刻以除去第二介电层侧壁上的PC材料膜。

公开(公告)号：US20080164454A1

公开(公告)日：2008-07-10

申请号：US11797730

申请日：2007-05-07

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/148 ,  H01L45/1691

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract translation: 提供了相变存储器件。 相变存储器件包括其上形成有第一电极层的衬底。 第一相变存储器结构在第一电极层上并且电连接到第一电极层。 第二相变存储器结构位于第一相变存储器结构上并电连接到第一相变存储器结构，其中第一或第二相变存储器结构包括杯形加热电极。 第一绝缘层沿着第一方向覆盖杯形加热电极的一部分。 第一电极结构沿第二方向覆盖第一绝缘层和杯形加热电极的一部分。 第一电极结构包括在第一电极结构的一对侧壁上的一对相变材料侧壁，并且覆盖杯形加热电极的一部分。

公开(公告)号：US20070298330A1

公开(公告)日：2007-12-27

申请号：US11533770

申请日：2006-09-21

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: G03F1/00 ,  G03F9/00

CPC classification number: G03F9/7088 ,  G03F1/44 ,  G03F7/70633 ,  G03F9/7076

Abstract: A recticle pattern applied to a mix-and-match lithography process is described. The recticle has a transparent region and a non-transparent region. The transparent region includes a device region and a scribe line region. The recticle pattern includes a plurality of device patterns, a portion of a first and a second set of alignment measure figures, and a set of overlay measure figures. The first and the second sets of the alignment measure figures are disposed on the scribe line region and the non-transparent region. The first and the second sets of the alignment measure figures respectively self-align to produce two sets of composite alignment measure figures after the exposure process. A set of overlay measure figures includes four rectangular boxes respectively disposed in the four areas formed in the corners of where the non-transparent region and the scribe line region meet to correct the overlay error caused by recticle rotation.

Abstract translation: 描述了应用于混合和匹配光刻工艺的直线图案。 圆柱体具有透明区域和不透明区域。 透明区域包括器件区域和划线区域。 所述直线图案包括多个装置图案，第一和第二组对准测量图形的一部分以及一组重叠测量图形。 对准测量图中的第一组和第二组设置在划线区域和不透明区域上。 第一组和第二组对准测量图分别自对准，以在曝光过程之后产生两组复合对准测量图。 一组覆盖测量图包括分别设置在不透明区域和划线区域相交的角部中形成的四个区域中的四个矩形框，以校正由直角旋转引起的重叠误差。

公开(公告)号：US20050274943A1

公开(公告)日：2005-12-15

申请号：US10978534

申请日：2004-11-02

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: G11C11/36 ,  G11C13/02 ,  H01L27/10

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/15 ,  G11C2213/55 ,  H01L27/285 ,  H01L51/0035 ,  H01L51/0051 ,  H01L51/0081

Abstract: An organic bistable memory device has an organic layer with two sides, each having a dielectric layer with an electrode. When voltage is applied to the two electrodes, the memory may be switched and operated between a high impedance state and a low impedance state. This reduces negative effects on the memory device due to poor quality material or non-uniform manufacturing of the device, effects such as reduced on/off current ratio, shortened retention time and shorting failure in the device. Also, the disclosed organic bistable memory provides evidence to improve our understanding of bistable memory.

Abstract translation: 有机双稳态存储器件具有两侧的有机层，每个具有带有电极的电介质层。 当对两个电极施加电压时，可以在高阻抗状态和低阻抗状态之间切换和操作存储器。 这可以减少由于材料质量差或器件的不均匀制造对存储器件的负面影响，例如器件中的导通/截止电流比降低，保持时间缩短以及短路故障。 此外，所公开的有机双稳态记忆提供了证据来提高我们对双稳态记忆的理解。

公开(公告)号：US20110155993A1

公开(公告)日：2011-06-30

申请号：US12796638

申请日：2010-06-08

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: H01L45/00 ,  H01L21/06

CPC classification number: H01L45/1666 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1273 ,  H01L45/144

Abstract: Phase change memory devices and fabrication methods thereof are presented. A phase change memory device includes a substrate structure. A first electrode is disposed on the substrate structure. A hollowed-cone hydrogen silsesquioxane (HSQ) structure is formed on the first electrode. A multi-level cell phase change memory structure is disposed on the hollowed-cone HSQ structure. A second electrode is disposed on the multi-level cell phase change memory structure.

Abstract translation: 提出了相变存储器件及其制造方法。 相变存储器件包括衬底结构。 第一电极设置在基板结构上。 在第一电极上形成中空锥形氢倍半硅氧烷（HSQ）结构。 多级单元相变存储器结构设置在中空锥形HSQ结构上。 第二电极设置在多电平单元相变存储器结构上。

公开(公告)号：US07932509B2

公开(公告)日：2011-04-26

申请号：US12205635

申请日：2008-09-05

Applicant: Wei-Su Chen ,  Chih-Wei Chen ,  Frederick T Chen

Inventor： Wei-Su Chen ,  Chih-Wei Chen ,  Frederick T Chen

IPC: H01L45/00

CPC classification number: H01L45/1273 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1641 ,  H01L45/1691

Abstract: A phase change memory device is disclosed, including a substrate. The phase change memory also includes a bottom electrode. A conductive structure with a cavity is provided to electrically contact the bottom electrode, wherein the conductive structure includes sidewalls with different thicknesses. A phase change spacer is formed to cross the sidewalls with different thicknesses. A top electrode is electrically contacted to the phase change spacer.

Abstract translation: 公开了一种相变存储器件，包括衬底。 相变存储器还包括底部电极。 提供具有空腔的导电结构以电接触底部电极，其中导电结构包括具有不同厚度的侧壁。 形成相变间隔物以跨越具有不同厚度的侧壁。 顶部电极与相变间隔物电接触。

公开(公告)号：US07851253B2

公开(公告)日：2010-12-14

申请号：US12292508

申请日：2008-11-20

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/148 ,  H01L45/1691

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract translation: 提供了相变存储器件。 相变存储器件包括其上形成有第一电极层的基板。 第一相变存储器结构在第一电极层上并且电连接到第一电极层。 第二相变存储器结构位于第一相变存储器结构上并电连接到第一相变存储器结构，其中第一或第二相变存储器结构包括杯形加热电极。 第一绝缘层沿着第一方向覆盖杯形加热电极的一部分。 第一电极结构沿第二方向覆盖第一绝缘层和杯形加热电极的一部分。 第一电极结构包括在第一电极结构的一对侧壁上的一对相变材料侧壁，并覆盖杯形加热电极的一部分。

公开(公告)号：US07626191B2

公开(公告)日：2009-12-01

申请号：US11435276

申请日：2006-05-17

Applicant: Te-Sheng Chao ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

Inventor： Te-Sheng Chao ,  Wen-Han Wang ,  Min-Hung Lee ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Yi-Chan Chen ,  Wei-Su Chen

IPC: H01L29/02

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract translation: 提供了具有间隔电极的横向相变存储器及其制造方法。 存储器通过以较低的电阻率连接导电电极和具有较高电阻率的间隔电极而形成，并且填充间隔电极之间的相变材料。 因此，可以减少相变材料与间隔电极接触的面积和相变材料的体积; 从而降低了相变存储器的编程电流和功耗。

公开(公告)号：US20090081825A1

公开(公告)日：2009-03-26

申请号：US12292508

申请日：2008-11-20

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: H01L45/00

CPC classification number: H01L45/144 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/148 ,  H01L45/1691

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate with a first electrode layer formed thereon. A first phase change memory structure is on the first electrode layer and electrically connected to the first electrode layer. A second phase change memory structure is on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first or second phase change memory structure includes a cup-shaped heating electrode. A first insulating layer covers a portion of the cup-shaped heating electrode along a first direction. A first electrode structure covers a portion of the first insulating layer and the cup-shaped heating electrode along a second direction. The first electrode structure includes a pair of phase change material sidewalls on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode.

Abstract translation: 提供了相变存储器件。 相变存储器件包括其上形成有第一电极层的衬底。 第一相变存储器结构在第一电极层上并且电连接到第一电极层。 第二相变存储器结构位于第一相变存储器结构上并电连接到第一相变存储器结构，其中第一或第二相变存储器结构包括杯形加热电极。 第一绝缘层沿着第一方向覆盖杯形加热电极的一部分。 第一电极结构沿第二方向覆盖第一绝缘层和杯形加热电极的一部分。 第一电极结构包括在第一电极结构的一对侧壁上的一对相变材料侧壁，并且覆盖杯形加热电极的一部分。

公开(公告)号：US07427459B2

公开(公告)日：2008-09-23

申请号：US11533770

申请日：2006-09-21

Applicant: Wei-Su Chen

Inventor： Wei-Su Chen

IPC: G03F9/00

CPC classification number: G03F9/7088 ,  G03F1/44 ,  G03F7/70633 ,  G03F9/7076

Abstract: A recticle pattern applied to a mix-and-match lithography process is described. The recticle has a transparent region and a non-transparent region. The transparent region includes a device region and a scribe line region. The recticle pattern includes a plurality of device patterns, a portion of a first and a second set of alignment measure figures, and a set of overlay measure figures. The first and the second sets of the alignment measure figures are disposed on the scribe line region and the non-transparent region. The first and the second sets of the alignment measure figures respectively self-align to produce two sets of composite alignment measure figures after the exposure process. A set of overlay measure figures includes four rectangular boxes respectively disposed in the four areas formed in the corners of where the non-transparent region and the scribe line region meet to correct the overlay error caused by recticle rotation.

Abstract translation: 描述了应用于混合和匹配光刻工艺的直线图案。 圆柱体具有透明区域和不透明区域。 透明区域包括器件区域和划线区域。 所述直线图案包括多个装置图案，第一和第二组对准测量图形的一部分以及一组重叠测量图形。 对准测量图中的第一组和第二组设置在划线区域和不透明区域上。 第一组和第二组对准测量图分别自对准，以在曝光过程之后产生两组复合对准测量图。 一组覆盖测量图包括分别设置在不透明区域和划线区域相交的角部中形成的四个区域中的四个矩形框，以校正由直角旋转引起的重叠误差。