公开(公告)号：US07329292B2

公开(公告)日：2008-02-12

申请号：US11259490

申请日：2005-10-25

申请人： Allen P. Mardian ,  Philip H. Campbell

发明人： Allen P. Mardian ,  Philip H. Campbell

IPC分类号： B01D41/00

CPC分类号： C23C16/4412 ,  B01D5/0006 ,  B01D53/002 ,  B01D53/68 ,  B01D2251/2062 ,  B01D2258/0216 ,  Y10S55/15

摘要： A trap device including at least one substance delivery element for introducing a substance therein is disclosed. The delivered substance may influence the nature of deposits that have formed within the trap device, may influence the formation of deposits within the trap device, or may cause a precipitate to form. Deposit interaction elements may be employed to influence the distribution or redistribution of deposits within the trap device. Deposit interaction elements may effect thermal conditions, introduce substances, or physically interact with deposits within the trap device. Further, a storage region within the trap device may be used to accumulate deposits. In one embodiment, a substantially continuous path through the trap device may be maintained or preserved so that deposits form within the trap device except substantially along the path. The present invention also encompasses a method of operation of a trap device as well as a system incorporating same.

摘要翻译： 公开了一种捕集装置，其包括用于将物质引入其中的至少一种物质递送元件。 所运送的物质可能影响在捕集装置内形成的沉积物的性质，可能影响捕集装置内沉积物的形成，或可能导致形成沉淀。 可以使用沉积相互作用元件来影响捕集装置内的沉积物的分布或再分布。 沉积相互作用元件可以影响热条件，引入物质，或与陷阱装置内的沉积物物理相互作用。 此外，捕集装置内的存储区域可以用于积累沉积物。 在一个实施例中，可以维持或保持通过捕集装置的基本上连续的路径，使得沉积物形成在捕集装置内，除了基本上沿着路径。 本发明还包括捕获装置的操作方法以及结合其的系统。

公开(公告)号：US06468925B2

公开(公告)日：2002-10-22

申请号：US09995387

申请日：2001-11-26

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： H01L2131

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在反应器的重新组装期间至少包括将导电的RF动力喷头支撑电极和导电气体分配喷头连接在一起，在导电RF供电的喷头支撑电极和导电气体分配喷头之间夹着导电材料; 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US06743736B2

公开(公告)日：2004-06-01

申请号：US10121341

申请日：2002-04-11

申请人： Allen P. Mardian ,  Gurtej S. Sandhu

发明人： Allen P. Mardian ,  Gurtej S. Sandhu

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  C23C16/455 ,  C23C16/45557

摘要： The invention includes reactive gaseous deposition precursor feed apparatus and chemical vapor deposition methods. In one implementation, a reactive gaseous deposition precursor feed apparatus includes a gas passageway having an inlet and an outlet. A variable volume accumulator reservoir is joined in fluid communication with the gas passageway. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a deposition chamber. A first deposition precursor is fed to an inlet of a variable volume accumulator reservoir. With the first deposition precursor therein, volume of the variable volume accumulator reservoir is decreased effective to expel first deposition precursor therefrom into the chamber under conditions effective to deposit a layer on the substrate.

摘要翻译： 本发明包括反应性气相沉积前体进料装置和化学气相沉积方法。 在一个实施方案中，反应性气相沉积前体进料装置包括具有入口和出口的气体通道。 可变体积蓄能器储存器与气体通道流体连通地连接。 在一个实施方案中，化学气相沉积方法包括将半导体衬底定位在沉积室内。 第一沉积前体被供给到可变体积蓄能器储存器的入口。 利用其中的第一沉积前体，有效地在有效沉积基底上的层的条件下有效地将可变容积蓄积器储存器的体积排出到其中以将第一沉积前体排出到室中。

公开(公告)号：US06412437B1

公开(公告)日：2002-07-02

申请号：US09642745

申请日：2000-08-18

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing, material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing. showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在所述反应器的重新组装期间至少包括连接所述导电RF功率的喷头支撑电极和导电气体分布，在所述导电RF供电的喷头支撑电极和所述导电气体喷射支撑电极之间夹着导电材料。 淋浴头在一起 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US07581511B2

公开(公告)日：2009-09-01

申请号：US10683424

申请日：2003-10-10

申请人： Allen P. Mardian ,  Santiago R. Rodriguez

发明人： Allen P. Mardian ,  Santiago R. Rodriguez

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/045 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32357 ,  H01L21/67069

摘要： A reactor comprising an energy source, a plasma unit positioned relative to the energy source, and a processing vessel connected to the plasma unit. The energy source has a generator that produces a plasma energy and a transmitter to transmit the plasma energy. The plasma unit has a first portion or transmissive portion through which the plasma energy can propagate, a second portion or distributor portion having a plurality of outlets, and a chamber in fluid communication with the plurality of outlets. The chamber is generally between or within the first and second portions. The plasma energy can pass through at least the first portion and into the chamber to create a plasma in the chamber. The second portion can also be transmissive or opaque to the plasma energy. The processing vessel includes a workpiece holder across from the outlets of the second portion of the plasma unit.

摘要翻译： 包括能量源，相对于能量源定位的等离子体单元的反应器和连接到等离子体单元的处理容器。 能量源具有产生等离子体能量的发生器和用于传输等离子体能量的发射器。 等离子体单元具有等离子体能量可以传播的第一部分或透射部分，具有多个出口的第二部分或分配器部分以及与多个出口流体连通的室。 腔室通常在第一和第二部分之间或之内。 等离子体能量可以至少穿过第一部分并进入腔室，以在腔室中产生等离子体。 第二部分也可以是等离子体能量的透射或不透明的。 处理容器包括跨过等离子体单元的第二部分的出口的工件保持器。

公开(公告)号：US07468104B2

公开(公告)日：2008-12-23

申请号：US10150388

申请日：2002-05-17

申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455

摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.

摘要翻译： 化学气相沉积装置包括至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 衬底保持器容纳在腔室内。 包括沉积室的至少一个工艺化学品入口。 腔室侧壁和腔室底壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 吹扫气体入口与至少一个过程化学品入口分开。 吹扫气体入口通道设置成与净化气体入口流体连通。 考虑了包括沉积方法实现的其他实现。