公开(公告)号：US07229666B2

公开(公告)日：2007-06-12

申请号：US10912878

申请日：2004-08-06

申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/45519

摘要： Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.

摘要翻译： 化学气相沉积的方法包括提供至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 包括沉积室的至少一个工艺化学品入口。 衬底定位在腔室内，并且在衬底上方设置有效地将材料沉积到衬底上的工艺气体。 在提供工艺气体的同时，净化气体从由至少一个室壁表面包括的多个吹扫气体入口排出到室中。 吹扫气体入口与至少一个过程化学品入口分离，并且所述排放物在室壁表面上形成惰性气体窗帘。

公开(公告)号：US07468104B2

公开(公告)日：2008-12-23

申请号：US10150388

申请日：2002-05-17

申请人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

发明人： Allen P. Mardian ,  Philip H. Campbell ,  Craig M. Carpenter ,  Randy W. Mercil ,  Sujit Sharan

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44

CPC分类号： C23C16/45565 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/455

摘要： A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.

摘要翻译： 化学气相沉积装置包括至少部分地由室侧壁和室底壁中的至少一个限定的沉积室。 衬底保持器容纳在腔室内。 包括沉积室的至少一个工艺化学品入口。 腔室侧壁和腔室底壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 吹扫气体入口与至少一个过程化学品入口分开。 吹扫气体入口通道设置成与净化气体入口流体连通。 考虑了包括沉积方法实现的其他实现。

公开(公告)号：US06800172B2

公开(公告)日：2004-10-05

申请号：US10082599

申请日：2002-02-22

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

IPC分类号： C23F100

CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

公开(公告)号：US07192487B2

公开(公告)日：2007-03-20

申请号：US10695727

申请日：2003-10-28

申请人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

发明人： Craig M. Carpenter ,  Ross S. Dando ,  Allen P. Mardian ,  Kevin T. Hamer ,  Raynald B. Cantin ,  Philip H. Campbell ,  Kimberly R. Tschepen ,  Randy W. Mercil

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/301

CPC分类号： H01L21/67126 ,  C23C16/4409 ,  C23C16/54 ,  Y10S414/139

摘要： A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

摘要翻译： 半导体衬底处理器包括衬底传送室和与之连接的多个衬底处理室。 在至少一个处理室和传送室之间接收界面结构。 界面结构包括插入在一个处理室和传送室之间的基本上非金属的绝热材料块。 质量足够的体积以有效地减少从处理室到传送室的传热比否则不存在所述材料块的情况。 界面结构包括具有延伸穿过其中的基底通道的主体。 该通道包括其至少一部分基本上是金属的壁。 主体包括基本上非金属和热绝缘的壁的材料周边。 基本上非金属材料具有其中至少部分延伸的安装开口。

公开(公告)号：US06412437B1

公开(公告)日：2002-07-02

申请号：US09642745

申请日：2000-08-18

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing, material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing. showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在所述反应器的重新组装期间至少包括连接所述导电RF功率的喷头支撑电极和导电气体分布，在所述导电RF供电的喷头支撑电极和所述导电气体喷射支撑电极之间夹着导电材料。 淋浴头在一起 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US06468925B2

公开(公告)日：2002-10-22

申请号：US09995387

申请日：2001-11-26

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： H01L2131

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在反应器的重新组装期间至少包括将导电的RF动力喷头支撑电极和导电气体分配喷头连接在一起，在导电RF供电的喷头支撑电极和导电气体分配喷头之间夹着导电材料; 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US06858264B2

公开(公告)日：2005-02-22

申请号：US10132003

申请日：2002-04-24

申请人： Ross S. Dando ,  Philip H. Campbell ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Ross S. Dando ,  Philip H. Campbell ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： C23C16/44 ,  C23C16/56

CPC分类号： C23C16/4405 ,  C23C16/4412

摘要： A chemical vapor deposition chamber has a vacuum exhaust line extending therefrom. Material is deposited over a first plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line. At least a portion of the vacuum exhaust line is isolated from the deposition chamber. While isolating, a cleaning fluid is flowed to the vacuum exhaust line effective to at least reduce thickness of the effluent product over the internal walls within the vacuum exhaust line from what it was prior to initiating said flowing. After said flowing, the portion of the vacuum exhaust line and the deposition chamber are provided in fluid communication with one another and material is deposited over a second plurality of substrates within the deposition chamber under conditions effective to deposit effluent product over internal walls of the vacuum exhaust line.

摘要翻译： 化学气相沉积室具有从其延伸的真空排气管。 在有效地将流出物产物沉积在真空排气管的内壁上的条件下，材料沉积在沉积室内的第一组多个衬底上。 真空排气管线的至少一部分与沉积室隔离。 在分离时，清洁流体流到真空排气管线，有效地至少将真空排气管内的内壁上的流出物的厚度从起始流动之前的厚度减小到最小。 在所述流动之后，真空排气管线和沉积室的部分设置成彼此流体连通，并且在有效地将流出物产物沉积在真空内壁上的条件下，在沉积室内的第二多个基板上沉积材料 排气管路。

公开(公告)号：US06787373B2

公开(公告)日：2004-09-07

申请号：US10396268

申请日：2003-03-24

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian ,  Gurtej S. Sandhu

IPC分类号： H01L2100

CPC分类号： C23C16/4401 ,  C23C16/54 ,  Y10S414/137

摘要： The invention includes an engagement mechanism for semiconductor substrate deposition process kit hardware, including a body having a distal portion and a proximal portion. The body is sized for movement through a passageway of a semiconductor substrate deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. At least engager is mounted to the distal portion of the body The engager is sized for movement through said passageway with the body. The engager is configured to releasably engage a component of process kit hardware received within said chamber. The invention includes methods of replacing at least a portion of semiconductor substrate deposition process kit hardware. The invention includes methods of depositing materials over a plurality of semiconductor substrates. Other implementations are contemplated.

摘要翻译： 本发明包括用于半导体衬底沉积工艺组件硬件的接合机构，包括具有远端部分和近端部分的本体。 本体的尺寸适于通过半导体衬底沉积室的通道移动，半导体衬底通过该通道进入和离开用于沉积处理的腔室。 至少该夹具安装到身体的远端部分。 接合器的尺寸适合于通过身体的所述通道移动。 接合器构造成可释放地接合在所述室内容纳的处理套件硬件的部件。 本发明包括替换半导体衬底沉积工艺组件硬件的至少一部分的方法。 本发明包括在多个半导体衬底上沉积材料的方法。 考虑其他实现。

公开(公告)号：US07311947B2

公开(公告)日：2007-12-25

申请号：US10683806

申请日：2003-10-10

申请人： Ross S. Dando ,  Dan Gealy ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

发明人： Ross S. Dando ,  Dan Gealy ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

IPC分类号： C23C14/28

CPC分类号： H01L21/02271 ,  C23C16/45523 ,  C23C16/483 ,  H01L21/0228 ,  H01L21/3141 ,  H01L29/78

摘要： A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor.

摘要翻译： 在衬底上形成膜的方法包括通过用调谐到气体前体的吸收频率的频率的电磁能照射气体前体来激活气体前体以在衬底上形成材料。

公开(公告)号：US07270715B2

公开(公告)日：2007-09-18

申请号：US10695726

申请日：2003-10-28

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Philip H. Campbell ,  Allen P. Mardian

IPC分类号： C23C16/00 ,  H01L21/306 ,  C23F1/00

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/54 ,  Y10S156/914 ,  Y10S414/139

摘要： A chemical vapor deposition apparatus includes a subatmospheric substrate transfer chamber. A subatmospheric deposition chamber is defined at least in part by a chamber sidewall. A passageway in the chamber sidewall extends from the transfer chamber to the deposition chamber. Semiconductor substrates pass into and out of the deposition chamber through the passageway for deposition processing. A mechanical gate is included within at least one of the deposition chamber and the sidewall passageway, and is configured to open and close at least a portion of the passageway to the chamber. A chamber liner apparatus of a chemical vapor deposition apparatus forms a deposition subchamber within the chamber. At least a portion of the chamber liner apparatus is selectively movable to fully expose and to fully cover the passageway to the chamber.

摘要翻译： 化学气相沉积设备包括低于大气压的基底传送室。 至少部分地由室侧壁限定低于大气压的沉积室。 腔室侧壁中的通道从传送室延伸到沉积室。 半导体衬底通过用于沉积处理的通道进入和离开沉积室。 机械闸门包括在沉积室和侧壁通道中的至少一个中，并且构造成打开和关闭至腔室的通道的至少一部分。 化学气相沉积设备的腔室衬垫设备在室内形成沉积子室。 腔室衬套装置的至少一部分选择性地可移动以完全暴露并完全覆盖到腔室的通道。