公开(公告)号：US07665872B2

公开(公告)日：2010-02-23

申请号：US11698537

申请日：2007-01-26

申请人： Masaaki Nakabayashi

发明人： Masaaki Nakabayashi

IPC分类号： B60Q1/00 ,  F21V19/00 ,  F21S8/00

CPC分类号： F21S41/147 ,  F21S41/19 ,  F21S41/25 ,  F21S45/47 ,  F21V27/02 ,  F21Y2115/10

摘要： A first LED unit, a first reflector, a second LED unit, a second reflector, and a light source mount which supports the first LED unit and the second LED unit are provided in a light chamber. The first reflector is formed integrally with a projection lens and forwardly reflects direct light outputted from a first LED to the central axis of the lens. The second reflector is formed integrally with the projection lens and forwardly reflects direct light outputted from a second LED. The light source mount has a fixing portion adapted to perform the positioning of the projection lens, the first reflector and the second reflector, which are formed integrally with a connecting member, in the direction of the central axis of the lens. The light source mount also has a positioning projection and positioning recesses, which are adapted to perform the positioning of the projection lens, the first reflector and the second reflector in a direction perpendicular to the central axis.

摘要翻译： 第一LED单元，第一反射器，第二LED单元，第二反射器和支撑第一LED单元和第二LED单元的光源底座设置在光室中。 第一反射器与投影透镜一体地形成，并且将从第一LED输出的直接光向前反射到透镜的中心轴线。 第二反射器与投影透镜一体地形成，并且向前反射从第二LED输出的直接光。 光源安装座具有适于在透镜的中心轴线的方向上执行与连接构件一体形成的投影透镜，第一反射器和第二反射器的定位的固定部。 光源安装座还具有定位突起和定位凹槽，其适于在垂直于中心轴线的方向上执行投影透镜，第一反射器和第二反射器的定位。

公开(公告)号：US20070177401A1

公开(公告)日：2007-08-02

申请号：US11698537

申请日：2007-01-26

申请人： Masaaki Nakabayashi

发明人： Masaaki Nakabayashi

IPC分类号： B60Q1/00

CPC分类号： F21S41/147 ,  F21S41/19 ,  F21S41/25 ,  F21S45/47 ,  F21V27/02 ,  F21Y2115/10

摘要： A first LED unit, a first reflector, a second LED unit, a second reflector, and a light source mount which supports the first LED unit and the second LED unit are provided in a light chamber. The first reflector is formed integrally with a projection lens and forwardly reflects direct light outputted from a first LED to the central axis of the lens. The second reflector is formed integrally with the projection lens and forwardly reflects direct light outputted from a second LED. The light source mount has a fixing portion adapted to perform the positioning of the projection lens, the first reflector and the second reflector, which are formed integrally with a connecting member, in the direction of the central axis of the lens. The light source mount also has a positioning projection and positioning recesses, which are adapted to perform the positioning of the projection lens, the first reflector and the second reflector in a direction perpendicular to the central axis.

摘要翻译： 第一LED单元，第一反射器，第二LED单元，第二反射器和支撑第一LED单元和第二LED单元的光源底座设置在光室中。 第一反射器与投影透镜一体地形成，并且将从第一LED输出的直接光向前反射到透镜的中心轴线。 第二反射器与投影透镜一体地形成，并且向前反射从第二LED输出的直接光。 光源安装座具有适于在透镜的中心轴线的方向上执行与连接构件一体形成的投影透镜，第一反射器和第二反射器的定位的固定部。 光源安装座还具有定位突起和定位凹槽，其适于在垂直于中心轴线的方向上执行投影透镜，第一反射器和第二反射器的定位。

公开(公告)号：US07029984B2

公开(公告)日：2006-04-18

申请号：US11136564

申请日：2005-05-25

申请人： Yoshimasa Horii ,  Masaaki Nakabayashi ,  Masaki Kurasawa ,  Kou Nakamura ,  Kazuaki Takai ,  Hideyuki Noshiro ,  Shigeyoshi Umemiya

发明人： Yoshimasa Horii ,  Masaaki Nakabayashi ,  Masaki Kurasawa ,  Kou Nakamura ,  Kazuaki Takai ,  Hideyuki Noshiro ,  Shigeyoshi Umemiya

IPC分类号： H01L21/8242

CPC分类号： H01L27/11507 ,  H01L27/11502

摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.

摘要翻译： 公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。 制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。 将第一膜沉积工艺的膜沉积温度设定为至少600℃

公开(公告)号：US20050215006A1

公开(公告)日：2005-09-29

申请号：US11136564

申请日：2005-05-25

申请人： Yoshimasa Horii ,  Masaaki Nakabayashi ,  Masaki Kurasawa ,  Kou Nakamura ,  Kazuaki Takai ,  Hideyuki Noshiro ,  Shigeyoshi Umemiya

发明人： Yoshimasa Horii ,  Masaaki Nakabayashi ,  Masaki Kurasawa ,  Kou Nakamura ,  Kazuaki Takai ,  Hideyuki Noshiro ,  Shigeyoshi Umemiya

IPC分类号： H01L21/00 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/84 ,  H01L27/04 ,  H01L27/105 ,  H01L27/115 ,  H04B3/00

CPC分类号： H01L27/11507 ,  H01L27/11502

摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.

摘要翻译： 公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。 制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。 将第一膜沉积工艺的膜沉积温度设定为至少600℃

公开(公告)号：US06670105B2

公开(公告)日：2003-12-30

申请号：US09398009

申请日：1999-09-17

申请人： Junji Terada ,  Masaaki Nakabayashi ,  Senichi Hayashi

发明人： Junji Terada ,  Masaaki Nakabayashi ,  Senichi Hayashi

IPC分类号： G02B518

CPC分类号： G03F7/001 ,  G02B5/1857

摘要： A method of manufacturing a micro-structure having a plurality of step-like elements, includes the steps of etching a first region of a substrate, corresponding to a lowest step of the step-like element, with an appropriate depth, whereby a surface of the lowest step of the step-like element is defined, and etching, subsequently, a second region of the substrate, corresponding to another step of the step-like element, with an appropriate depth, whereby a surface of that step of the step-like element is defined.

摘要翻译： 制造具有多个阶梯状元件的微结构的方法包括以适当的深度蚀刻对应于阶梯状元件的最下层台阶的基板的第一区域的步骤，由此， 限定阶梯状元件的最下层的步骤，然后用适当的深度刻蚀对应于阶梯状元件的另一步骤的衬底的第二区域，由此， 像元素被定义。

公开(公告)号：US06523963B2

公开(公告)日：2003-02-25

申请号：US09938573

申请日：2001-08-27

申请人： Masaaki Nakabayashi

发明人： Masaaki Nakabayashi

IPC分类号： G02B518

CPC分类号： G02B27/4277 ,  G02B5/1814 ,  G02B5/1847 ,  G02B7/00 ,  Y10S359/90

摘要： The present invention provides a diffraction optical element comprising a first optical member having a first diffraction grating, a second optical member having a second diffraction grating, wherein the first and second optical members are stacked so that the first and second diffraction gratings face each other inside the stacked members and so that a space is formed between the diffraction gratings, and a sealing member for hermetically sealing the space between the diffraction gratings.

摘要翻译： 本发明提供了一种衍射光学元件，其包括具有第一衍射光栅的第一光学部件，具有第二衍射光栅的第二光学部件，其中第一和第二光学部件被堆叠，使得第一和第二衍射光栅彼此面对 并且使得在衍射光栅之间形成空间，以及用于气密地密封衍射光栅之间的空间的密封构件。

公开(公告)号：US5905278A

公开(公告)日：1999-05-18

申请号：US901279

申请日：1997-07-29

申请人： Masaaki Nakabayashi

发明人： Masaaki Nakabayashi

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L28/75 ,  H01L28/55 ,  H01L28/65 ,  Y10S438/945

摘要： A semiconductor memory device includes a memory cell capacitor for storing information, wherein the memory cell capacitor includes a capacitor insulation film of a double oxide on a lower electrode. The lower electrode has a layered structure of Ir/IrO.sub.2 /Ir or Ru/RuO.sub.2 /Ru acting as a diffusion barrier of oxygen or Pb. Further, the use of a Pt--Ir alloy is disclosed for the lower electrode.