公开(公告)号：US20090321801A1

公开(公告)日：2009-12-31

申请号：US12553428

申请日：2009-09-03

申请人： Shinichiro HAYASHI ,  Toru Nasu

发明人： Shinichiro HAYASHI ,  Toru Nasu

IPC分类号： H01L27/06 ,  H01G4/06 ,  B05D5/12 ,  H01L21/8239

CPC分类号： H01L21/02356 ,  C23C16/40 ,  C23C16/56 ,  H01L21/02197 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A capacitor insulating film is composed of a ferroelectric film formed on a substrate and containing an element functioning as a crystal nucleus which allows the growth of a crystal in a random crystal orientation.

摘要翻译： 电容绝缘膜由在基板上形成的铁电体膜构成，并且含有作为晶核的元素，其能够以随机的晶体取向生长晶体。

公开(公告)号：US20060292816A1

公开(公告)日：2006-12-28

申请号：US11415069

申请日：2006-05-02

申请人： Takumi Mikawa ,  Toru Nasu

发明人： Takumi Mikawa ,  Toru Nasu

IPC分类号： H01L21/20 ,  H01L29/00

CPC分类号： H01L28/55 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/65 ,  H01L28/91

摘要： A semiconductor device comprises: an insulating film formed over a semiconductor substrate and having a first recess; a plurality of capacitor elements each of which is composed of a capacitor lower electrode formed on wall and bottom portions of the first recess and having a second recess, a capacitor insulating film of a dielectric film formed on wall and bottom portions of the second recess and having a third recess, and a capacitor upper electrode formed on wall and bottom portions of the third recess; and a conductive layer (referred hereinafter to as a low-resistance conductive layer) which is formed to cover at least portions of the respective capacitor upper electrodes constituting the plurality of capacitor elements and to extend across the plurality of capacitor elements and which has a lower resistance than the capacitor upper electrode.

摘要翻译： 半导体器件包括：形成在半导体衬底上并具有第一凹槽的绝缘膜; 多个电容器元件，每个电容器元件由形成在第一凹部的壁和底部上的电容器下电极组成，并具有第二凹部，形成在第二凹部的壁和底部上的电介质膜的电容绝缘膜， 具有第三凹部和形成在第三凹部的壁部和底部上的电容器上电极; 以及形成为覆盖构成多个电容器元件的各个电容器上电极的至少一部分并且跨越多个电容器元件并且具有较低电容器元件的导电层（以下称为低电阻导电层） 电阻比电容器上电极。

公开(公告)号：US20060026250A1

公开(公告)日：2006-02-02

申请号：US11192732

申请日：2005-07-29

申请人： Takayuki Ito ,  Hidenori Miyamoto ,  Toru Nasu ,  Shikiko Kawano

发明人： Takayuki Ito ,  Hidenori Miyamoto ,  Toru Nasu ,  Shikiko Kawano

IPC分类号： G06F15/16

CPC分类号： H04L51/22 ,  H04L51/30

摘要： When a mail server 31 and a mail server 32 are in a failover state, switches 21, 22 select communication paths E, F. A temporary save server 50 stores email received from a mail reception server 10 during the failover in a disk storage 60, and after the completion of the failover, transmits to a mail server (e.g., mail server 32) that has been switched to function as a primary system an email stored in disk storage 60 and a write request for a disk storage 40. Mail server 32, upon receiving an email and a write request from temporary save server 50, stores the received email to disk storage 40 to update stored content.

摘要翻译： 当邮件服务器31和邮件服务器32处于故障转移状态时，交换机21,22选择通信路径E，F。临时保存服务器50将在故障切换期间从邮件接收服务器10接收的电子邮件存储在磁盘存储器60中， 并且在完成故障转移之后，将已经被切换为用作主系统的邮件服务器（例如，邮件服务器32）存储在磁盘存储器60中的电子邮件和对磁盘存储器40的写入请求。 邮件服务器32在接收到来自临时保存服务器50的电子邮件和写入请求时，将接收的电子邮件存储到磁盘存储器40以更新存储的内容。

公开(公告)号：US06756621B2

公开(公告)日：2004-06-29

申请号：US10330160

申请日：2002-12-30

申请人： Toru Nasu ,  Shinichiro Hayashi

发明人： Toru Nasu ,  Shinichiro Hayashi

IPC分类号： H01L31119

CPC分类号： H01L28/56

摘要： The ferroelectric capacitor device includes a bottom electrode, a capacitor insulating film formed of a ferroelectric film, and a top electrode. The ferroelectric film has a bismuth layer structure including a plurality of bismuth oxide layers and a plurality of perovskite-like layers alternately put on top of each other. The plurality of bismuth oxide layers are formed of Bi2O2, and the plurality of perovskite-like layers include two or more kinds of layers represented by a general formula: Am−1BmO3m+&agr; (where A is a univalent, divalent or trivalent metal, B is a tetravalent, pentavalent or hexavalent metal, m is an integer equal to or more than 1, at least one of A being Bi if m is an integer of 2 or more, and 0≦&agr;≦1) and different in the value of m.

摘要翻译： 铁电电容器装置包括底电极，由铁电体膜形成的电容绝缘膜和顶电极。 铁电体膜具有包括多个氧化铋层和交替放置在彼此顶部的多个钙钛矿层的铋层结构。 多个氧化铋层由Bi 2 O 2形成，多个钙钛矿层包含由以下通式表示的两种或更多种层：Am-1BmO3m +α（其中A为一价，二价或三价金属，B 是四价，五价或六价金属，m是等于或大于1的整数，如果m是2或更大的整数，并且0≤α≤1，则A中的至少一个是Bi，并且在 值m。

公开(公告)号：US06734456B2

公开(公告)日：2004-05-11

申请号：US10287824

申请日：2002-11-05

申请人： Keisuke Tanaka ,  Toru Nasu ,  Masamichi Azuma

发明人： Keisuke Tanaka ,  Toru Nasu ,  Masamichi Azuma

IPC分类号： H01L2976

CPC分类号： H01L21/02197 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/75

摘要： The ferroelectric film of the invention is made from a ferroelectric material represented by a general formula, Bi4−x+yAxTi3O12 or (Bi4−x+yAxTi3O12)z+(DBi2E2O9)1−z, wherein A is an element selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V; D is an element selected from the group consisting of Sr, Ba, Ca, Bi, Cd, Pb and La; E is an element selected from the group consisting of Ti, Ta, Hf, W, Nb, Zr and Cr; and 0≦x≦2, 0

摘要翻译： 本发明的铁电体膜由通式Bi4-x + yAxTi3O12或（Bi4-x + yAxTi3O12）z +（DBi2E2O9）1-z表示的铁电材料制成，其中A为选自 La，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu和V; D是选自Sr，Ba，Ca，Bi，Cd，Pb和La的元素; E是选自Ti，Ta，Hf，W，Nb，Zr和Cr的元素; 0 <= x <= 2,0