公开(公告)号：US07564085B2

公开(公告)日：2009-07-21

申请号：US11606966

申请日：2006-12-01

Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

IPC: H01L27/108 ,  H01L29/08

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L27/10805 ,  H01L27/1203 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/86 ,  Y10S977/724 ,  Y10S977/725

Abstract: A memory device that performs writing and reading operations using a mechanical movement of a nanowire, and a method of manufacturing the memory device are provided. The memory device includes a source electrode, a drain electrode, and a gate electrode, each of which is formed on an insulating substrate. A nanowire capacitor is formed on the source electrode. The nanowire capacitor includes a first nanowire vertically grown from the source electrode, a dielectric layer formed on the outer surface of the first nanowire, and a floating electrode formed on the outer surface of the dielectric layer. A second nanowire is vertically grown on the drain electrode. The drain electrode is arranged between the source electrode and the gate electrode. The second nanowire is elastically deformed and contacts the nanowire capacitor when a drain voltage is applied to the drain electrode, and polarity of the drain voltage is opposite to polarity of a source voltage that is applied to the source electrode. Information is stored in the memory device in a form of a charged or non-charged state of the nanowire capacitor. Reading and writing operation of the memory device is performed by the mechanical movement of the second nanowire.

Abstract translation: 提供了使用纳米线的机械移动执行写入和读取操作的存储器件，以及制造存储器件的方法。 存储器件包括源电极，漏电极和栅电极，它们都形成在绝缘衬底上。 在源电极上形成纳米线电容器。 纳米线电容器包括从源极垂直生长的第一纳米线，形成在第一纳米线的外表面上的电介质层和形成在电介质层的外表面上的浮动电极。 在漏电极上垂直生长第二纳米线。 漏极布置在源电极和栅电极之间。 当向漏电极施加漏极电压时，第二纳米线弹性变形并与纳米线电容器接触，并且漏极电压的极性与施加到源电极的源极电压的极性相反。 信息以纳米线电容器的充电或非充电状态的形式存储在存储器件中。 通过第二纳米线的机械运动来进行记忆装置的读写操作。

公开(公告)号：US07501146B2

公开(公告)日：2009-03-10

申请号：US11244106

申请日：2005-10-06

Applicant: Hang-Woo Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Ha-Jin Kim ,  Min-Jong Bae

Inventor： Hang-Woo Lee ,  Yong-Wan Jin ,  In-Taek Han ,  Ha-Jin Kim ,  Min-Jong Bae

IPC: B05D5/00 ,  B05D5/12 ,  H01J9/00

CPC classification number: H01J29/481 ,  B82Y10/00 ,  B82Y30/00 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469 ,  Y10S977/84 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/89

Abstract: A carbon nanotube emitter and its fabrication method, a Field Emission Device (FED) using the carbon nanotube emitter and its fabrication method include a carbon nanotube emitter having a plurality of first carbon nanotubes arranged on a substrate and in parallel with the substrate, and a plurality of the second carbon nanotubes arranged on a surface of the first carbon nanotubes.

Abstract translation: 碳纳米管发射体及其制造方法，使用碳纳米管发射体的场发射器件（FED）及其制造方法包括具有布置在衬底上并与衬底平行的多个第一碳纳米管的碳纳米管发射体， 多个第二碳纳米管布置在第一碳纳米管的表面上。

公开(公告)号：US07382090B2

公开(公告)日：2008-06-03

申请号：US11130264

申请日：2005-05-17

Applicant: Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

Inventor： Young-Jun Park ,  Yong-Wan Jin ,  In-Taek Han

IPC: H01J17/30

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J29/481 ,  H01J2201/30469

Abstract: A field emission device and a field emission display (FED) using the same and a method of making the field emission device. The FED includes a glass substrate, a layer of a material formed on the glass substrate and having a concave portion, a cathode electrode formed on the material layer and also having a concave portion, electron emitters formed on the concave portion of the cathode electrode, a gate insulating layer formed on the cathode electrode and having a cavity communicating with the concave portion, and a gate electrode formed on the gate insulating layer and having a gate aperture aligned with the cavity.

Abstract translation: 场发射器件和使用其的场致发射显示器（FED）以及制造场致发射器件的方法。 FED包括玻璃基板，形成在玻璃基板上的具有凹部的材料层，形成在材料层上的阴极，还具有凹部，形成在阴极电极的凹部上的电子发射体， 形成在所述阴极电极上且具有与所述凹部连通的空腔的栅极绝缘层，以及形成在所述栅极绝缘层上并具有与所述空腔对准的栅极孔的栅电极。

公开(公告)号：US20080108271A1

公开(公告)日：2008-05-08

申请号：US11790657

申请日：2007-04-26

Applicant: Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

Inventor： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

IPC: H01J9/02

CPC classification number: H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

Abstract: A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

Abstract translation: 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

公开(公告)号：US20080061351A1

公开(公告)日：2008-03-13

申请号：US11889515

申请日：2007-08-14

Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Byong-Gwon Song ,  Yong-Wan Jin

IPC: H01L29/788 ,  H01H57/00 ,  H01L21/00

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L51/0048 ,  Y10S977/943

Abstract: A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.

Abstract translation: 纳米线机电开关器件由源电极和漏电极构成，绝缘基片设置在绝缘基片上并彼此隔开，第一纳米线在源电极上垂直生长，并且V 1电压 施加在漏电极上垂直生长的第二纳米线，并且施加具有与V 1电压的极性相反极性的V 2电压，并且栅极 电极与第二纳米线间隔开，部分地围绕第二纳米线并且具有面向第一纳米线的开口，以避免干扰第一纳米线和第二纳米线的相互切换操作，并且V 3 施加具有与V 2电压相同极性的电压。

公开(公告)号：US20050152155A1

公开(公告)日：2005-07-14

申请号：US10980793

申请日：2004-11-04

Applicant: Ho-Suk Kang ,  In-Taek Han ,  Yong-Wan Jin ,  Min-Jong Bae ,  Young-Jun Park

Inventor： Ho-Suk Kang ,  In-Taek Han ,  Yong-Wan Jin ,  Min-Jong Bae ,  Young-Jun Park

IPC: G02F1/13357 ,  F21V7/04 ,  G02F1/1335 ,  G03F7/20 ,  G09G3/00 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J9/24 ,  H01J31/00 ,  H01J63/06

CPC classification number: H01J9/241 ,  H01J9/025 ,  H01J63/02 ,  H01J63/06 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A field emission backlight unit for a liquid crystal display (LCD) includes: a lower substrate; first electrodes and second electrodes alternately formed in parallel lines on the lower substrate; emitters disposed on at least the first electrodes; an upper substrate spaced apart from the lower substrate by a predetermined distance such that the upper and lower substrates face each other; a third electrode formed on a bottom surface of the upper substrate; and a fluorescent layer formed on the third electrode. Since the backlight unit has a triode-type field emission structure, field emission is very stable. Since the first electrodes and the second electrodes are formed in the same plane, brightness uniformity is improved and manufacturing processes are simplified. If the emitters are disposed on both the first electrodes and the second electrodes, and a cathode voltage and a gate voltage are alternately applied to the first electrodes and second electrodes, the lifespan and brightness of the emitters can be improved. The above advantages are also achieved as a result of the method of driving the backlight unit and the method of manufacturing the lower panel thereof.

Abstract translation: 用于液晶显示器（LCD）的场发射背光单元包括：下基板; 第一电极和第二电极在下基板上交替地以平行线形成; 至少设置在第一电极上的发射体; 上基板与下基板隔开预定距离，使得上基板和下基板彼此面对; 形成在所述上基板的底面上的第三电极; 以及形成在第三电极上的荧光层。 由于背光单元具有三极管型场发射结构，因此场发射非常稳定。 由于第一电极和第二电极形成在同一平面上，因此亮度均匀性得到改善，制造工艺简化。 如果发射体设置在第一电极和第二电极两者上，并且阴极电压和栅极电压交替施加到第一电极和第二电极，则能够提高发光体的寿命和亮度。 通过驱动背光单元的方法和制造其下面板的方法也可以实现上述优点。

公开(公告)号：US08896567B2

公开(公告)日：2014-11-25

申请号：US13096447

申请日：2011-04-28

Applicant: Jung-Woo Kim ,  Yong-Wan Jin

Inventor： Jung-Woo Kim ,  Yong-Wan Jin

IPC: G06F3/045 ,  G09G3/34 ,  G06F3/041

CPC classification number: G06F3/0412 ,  G09G3/3433 ,  G09G2300/0456 ,  G09G2300/088 ,  G09G2380/14

Abstract: A pixel circuit includes a first transistor that supplies a data signal to a first node in response to a scan signal. The pixel circuit may also include a capacitor that is connected between the first node and a ground voltage and a detecting unit that is connected in parallel with the capacitor. More so, the detecting unit may change a voltage of the first node by being activated in response to a mode signal. Also, the detecting unit may have resistance that varies according to an external stimulus. The pixel circuit may also include a second transistor that is complementarily activated with respect to the detecting unit in response to the mode signal, and that provides a voltage of the first node.

Abstract translation: 像素电路包括响应于扫描信号将数据信号提供给第一节点的第一晶体管。 像素电路还可以包括连接在第一节点和地电压之间的电容器以及与电容器并联连接的检测单元。 更重要的是，检测单元可以通过响应于模式信号被激活来改变第一节点的电压。 此外，检测单元可以具有根据外部刺激而变化的电阻。 像素电路还可以包括响应于模式信号而相对于检测单元互补地激活的第二晶体管，并且提供第一节点的电压。

公开(公告)号：US08053846B2

公开(公告)日：2011-11-08

申请号：US11826170

申请日：2007-07-12

Applicant: Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

Inventor： Seung-Nam Cha ,  Jae-Eun Jang ,  Jae-Eun Jung ,  Yong-Wan Jin ,  Byong-Gwon Song

IPC: H01L27/088

CPC classification number: H01L29/42372 ,  H01L21/2652 ,  H01L21/2807 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/49 ,  H01L29/515 ,  H01L29/6659

Abstract: A transistor includes: a semiconductor substrate; a channel region arranged on the semiconductor substrate; a source and a drain respectively arranged on either side of the channel region; and a conductive nano tube gate arranged on the semiconductor substrate to transverse the channel region between the source and the drain. Its method of manufacture includes: arranging a conductive nano tube on a surface of a semiconductor substrate; defining source and drain regions having predetermined sizes and traversing the nano tube; forming a metal layer on the source and drain regions; removing a portion of the metal layer formed on the nano tube to respectively form source and drain electrodes separated from the metal layer on either side of the nano tube; and doping a channel region below the nano tube arranged between the source and drain electrodes by ion-implanting.

Abstract translation: 晶体管包括：半导体衬底; 布置在所述半导体衬底上的沟道区; 分别布置在通道区域的任一侧上的源极和漏极; 以及布置在半导体衬底上以横向源极和漏极之间的沟道区域的导电纳米管栅极。 其制造方法包括：在半导体衬底的表面上布置导电纳米管; 限定具有预定尺寸并穿过纳米管的源区和漏区; 在源极和漏极区域上形成金属层; 去除形成在纳米管上的金属层的一部分，以分别形成与纳米管的任一侧上的金属层分离的源极和漏极; 以及通过离子注入在排列在源极和漏极之间的纳米管下方的沟道区域掺杂。

公开(公告)号：US07942714B2

公开(公告)日：2011-05-17

申请号：US11790657

申请日：2007-04-26

Applicant: Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

Inventor： Ho-Suk Kang ,  Yong-Wan Jin ,  Sun-Il Kim ,  Deuk-Seok Chung ,  Byong-Gwon Song ,  Shang-Hyeun Park

IPC: H01J9/02 ,  H01J1/304

CPC classification number: H01J63/02 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0455

Abstract: A method of manufacturing a field emission display includes: sequentially forming a cathode electrode, an insulating layer, and a gate material layer on a substrate; forming a metal sacrificial layer on an upper surface of the gate material layer; forming a through hole to expose the insulating layer in the metal sacrificial layer and the gate material layer; forming an emitter hole to expose the cathode electrode in the insulating layer exposed through the through hole; forming a gate electrode by etching the gate material layer constituting an upper wall of the emitter hole; and forming an emitter of Carbon NanoTubes (CNTs) on an upper surface of the cathode electrode located below the through hole.

Abstract translation: 场发射显示器的制造方法包括：在基板上依次形成阴极电极，绝缘层和栅极材料层; 在栅极材料层的上表面上形成金属牺牲层; 形成通孔以暴露金属牺牲层和栅极材料层中的绝缘层; 形成发射极孔，露出通过该通孔的绝缘层中的阴极电极; 通过蚀刻构成发射极孔的上壁的栅极材料层来形成栅电极; 以及在位于通孔下方的阴极电极的上表面上形成碳纳米管（CNT）的发射极。

公开(公告)号：US20080230853A1

公开(公告)日：2008-09-25

申请号：US11987250

申请日：2007-11-28

Applicant: Jae-Eun Jang ,  Seung-Nam Cha ,  Jae-Eun Jung ,  Yong-Wan Jin

Inventor： Jae-Eun Jang ,  Seung-Nam Cha ,  Jae-Eun Jung ,  Yong-Wan Jin

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/775 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  H01L51/0525 ,  H01L51/0558 ,  Y10S977/762

Abstract: In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.

Abstract translation: 在晶体管及其制造方法中，晶体管包括布置在基板上的沟道层，形成在基板上的源电极和漏电极，以便与沟道层的各个端部接触，围绕 源电极和漏电极之间的沟道层，以及围绕栅极绝缘层的栅电极。