公开(公告)号：US09055861B2

公开(公告)日：2015-06-16

申请号：US13397744

申请日：2012-02-16

申请人： Hee-jin Oh ,  Yong-tae Kim ,  Hwan Shim

发明人： Hee-jin Oh ,  Yong-tae Kim ,  Hwan Shim

IPC分类号： A61B5/00 ,  A61B7/00

CPC分类号： A61B5/4803 ,  A61B5/4082 ,  A61B5/7246 ,  A61B7/00 ,  A61B7/003 ,  A61B7/04

摘要： A method and apparatus for diagnosing a user's health state are provided. The apparatus includes including a voice detecting unit which detects and monitors a user's voice; a voice analyzing unit which extracts a voice feature from a voice detected by the voice detecting unit, based on a health state to be diagnosed; a voice diagnosing unit which diagnoses a health state of the user by comparing the voice feature extracted by the voice analyzing unit with an abnormal state reference, and which monitors a change in the health state; and a diagnosis outputting unit which outputs information regarding the health state and a health state change diagnosed by the voice diagnosing unit.

摘要翻译： 提供了一种用于诊断用户健康状态的方法和装置。 该装置包括：检测并监视用户声音的语音检测单元; 语音分析单元，其基于要被诊断的健康状态从语音检测单元检测到的语音中提取语音特征; 语音诊断单元，其通过将由语音分析单元提取的语音特征与异常状态参考进行比较来诊断用户的健康状态，并监视健康状态的变化; 以及诊断输出单元，其输出关于由语音诊断单元诊断的健康状态和健康状态改变的信息。

公开(公告)号：US20130293677A1

公开(公告)日：2013-11-07

申请号：US13980679

申请日：2012-01-11

申请人： Jae-jun Lee ,  Moon-seok Jang ,  Hong-seok Park ,  Yu-sung Joo ,  Hee-jean Kim ,  Dae-jong Lee ,  Yong-seok Jang ,  Yong-tae Kim

发明人： Jae-jun Lee ,  Moon-seok Jang ,  Hong-seok Park ,  Yu-sung Joo ,  Hee-jean Kim ,  Dae-jong Lee ,  Yong-seok Jang ,  Yong-tae Kim

IPC分类号： H04N13/00

CPC分类号： H04N13/167 ,  H04N13/178 ,  H04N13/194 ,  H04N21/4307 ,  H04N21/4345 ,  H04N21/4622 ,  H04N21/6112 ,  H04N21/6125 ,  H04N21/816

摘要： A reception device is provided. The reception device includes: a first receiver receiving a first real-time transport stream via a broadcast network; a second receiver receiving a second real-time transport stream via a communication network; a delay processor delaying at least one of the first and second real-time transport streams for synchronization; a first detector detecting first data from the first real-time transport stream; a second detector detecting second data from a second real-time transport stream; a signal processor combining the first data and the second data so as to constitute multimedia content; and a playing unit playing the multimedia content.

摘要翻译： 提供接收设备。 接收装置包括：经由广播网络接收第一实时传输流的第一接收机; 经由通信网络接收第二实时传输流的第二接收机; 延迟处理器延迟用于同步的第一和第二实时传输流中的至少一个; 第一检测器，检测来自第一实时传输流的第一数据; 第二检测器，检测来自第二实时传输流的第二数据; 信号处理器，组合第一数据和第二数据，以构成多媒体内容; 以及播放多媒体内容的播放单元。

公开(公告)号：US20130182072A1

公开(公告)日：2013-07-18

申请号：US13824818

申请日：2011-09-30

申请人： Ju-hee Seo ,  Bong-je Cho ,  Hong-seok Park ,  Kil-soo Jung ,  Yong-tae Kim

发明人： Ju-hee Seo ,  Bong-je Cho ,  Hong-seok Park ,  Kil-soo Jung ,  Yong-tae Kim

IPC分类号： H04N13/00 ,  H04N13/04

CPC分类号： H04N13/128 ,  H04N13/156 ,  H04N13/183 ,  H04N13/302

摘要： A display apparatus which displays a graphic object is provided. The display apparatus includes a video processor which processes a video signal and forms an image, a graphic processor which processes graphic data and forms a graphic object, a display which displays the image and the graphic object, a controller which applies different cubic effects on each of the image and the graphic object, respectively, and controls the video processor and graphic processor to maintain a state where the graphic object is displayed on an overlay layer which is above a reference layer where the image is displayed.

摘要翻译： 提供了显示图形对象的显示装置。 显示装置包括处理视频信号并形成图像的视频处理器，处理图形数据并形成图形对象的图形处理器，显示图像和图形对象的显示器，对每个图像应用不同的立方效果的控制器 的图像和图形对象，并且控制视频处理器和图形处理器以保持图形对象在显示图像的参考层之上的覆盖层上显示的状态。

公开(公告)号：US07256448B2

公开(公告)日：2007-08-14

申请号：US11349402

申请日：2006-02-07

申请人： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

发明人： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

摘要： A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.

摘要翻译： 提供一种分离栅极型非易失性半导体存储器件及其制造分离栅型非易失性半导体存储器件的方法。 在半导体衬底上形成栅绝缘层和浮栅导电层。 掩模层图案形成在浮栅导电层上以限定沿第一方向延伸的第一开口。 具有预定宽度的第一牺牲间隔物形成在对应于掩模层图案的两个侧壁上。 栅极间绝缘层形成在浮栅导电层上。 去除第一牺牲间隔物，并且蚀刻浮栅导电层，直到露出栅极绝缘层。 隧道绝缘层形成在浮栅导电层的露出部分上。 在半导体衬底的表面上形成控制栅导电层。 在控制栅极导电层上形成具有预定宽度的第二牺牲间隔物。 通过蚀刻暴露的控制栅极导电层，在第一开口中形成分裂控制栅极。 蚀刻剩余的掩模层图案和栅极间绝缘层，直到浮栅导电层露出。 蚀刻暴露的浮栅导电层，以在第一开口中形成分离浮栅。

公开(公告)号：US20050208744A1

公开(公告)日：2005-09-22

申请号：US11083130

申请日：2005-03-17

申请人： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

发明人： Heeseog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim ,  Yong-suk Choi

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

摘要： A split gate type nonvolatile semiconductor memory device and a method of fabricating a split gate type nonvolatile semiconductor memory device are provided. A gate insulating layer and a floating-gate conductive layer are formed on a semiconductor substrate. A mask layer pattern is formed on the floating-gate conductive layer to define a first opening extending in a first direction. First sacrificial spacers having a predetermined width are formed on both sidewalls corresponding to the mask layer pattern. An inter-gate insulating layer is formed on the floating-gate conductive layer. The first sacrificial spacers are removed, and the floating-gate conductive layer is etched until the gate insulating layer is exposed. A tunneling insulating layer is formed on an exposed portion of the floating-gate conductive layer. A control-gate conductive layer is formed on a surface of the semiconductor substrate. Second sacrificial spacers having predetermined widths are formed on the control-gate conductive layer. A split control gate is formed in the first opening, by etching the exposed control-gate conductive layer. The remaining mask layer pattern and inter-gate insulating layer are etched until the floating-gate conductive layer is exposed. The exposed floating-gate conductive layer is etched to form a split floating gate in the first opening.

摘要翻译： 提供一种分离栅极型非易失性半导体存储器件及其制造分离栅型非易失性半导体存储器件的方法。 在半导体衬底上形成栅绝缘层和浮栅导电层。 掩模层图案形成在浮栅导电层上以限定沿第一方向延伸的第一开口。 具有预定宽度的第一牺牲间隔物形成在对应于掩模层图案的两个侧壁上。 栅极间绝缘层形成在浮栅导电层上。 去除第一牺牲间隔物，并且蚀刻浮栅导电层，直到露出栅极绝缘层。 隧道绝缘层形成在浮栅导电层的露出部分上。 在半导体衬底的表面上形成控制栅导电层。 在控制栅极导电层上形成具有预定宽度的第二牺牲间隔物。 通过蚀刻暴露的控制栅极导电层，在第一开口中形成分裂控制栅极。 蚀刻剩余的掩模层图案和栅极间绝缘层，直到浮栅导电层露出。 蚀刻暴露的浮栅导电层，以在第一开口中形成分离浮栅。

公开(公告)号：US09456196B2

公开(公告)日：2016-09-27

申请号：US13580895

申请日：2011-02-23

申请人： Yong-tae Kim ,  Ha-joong Park ,  Gun-ill Lee ,  Houng-sog Min ,  Sung-bin Hong ,  Kwang-cheol Choi

发明人： Yong-tae Kim ,  Ha-joong Park ,  Gun-ill Lee ,  Houng-sog Min ,  Sung-bin Hong ,  Kwang-cheol Choi

IPC分类号： G06K9/00 ,  H04N13/00

CPC分类号： H04N13/178 ,  H04N13/144 ,  H04N13/161 ,  H04N13/194

摘要： Provided are an apparatus and a method of providing a multiview still image service. The method includes: configuring a multiview still image file format including a plurality of image areas into which a plurality of pieces of image information forming a multiview still image are inserted; inserting the plurality of pieces of image information into the plurality of image areas, respectively; inserting three-dimensional (3D) basic attribute information to three-dimensionally reproduce the multiview still image into a first image area of the plurality of image areas into which main-view image information from among the plurality of pieces of image information is inserted; and outputting multiview still image data comprising the plurality of pieces of image information based on the multiview still image file format.

摘要翻译： 提供了一种提供多视点静止图像服务的装置和方法。 该方法包括：配置包括多个图像区域的多视图静止图像文件格式，多个图像信息形成多维静态图像的图像信息; 将多张图像信息分别插入到多个图像区域中; 将三维（3D）基本属性信息插入三维再现多视点静止图像到多个图像区域的第一图像区域中，从多个图像信息中插入主视图图像信息; 以及基于所述多视点静止图像文件格式输出包括所述多个图像信息的多视点静止图像数据。

公开(公告)号：US08296082B2

公开(公告)日：2012-10-23

申请号：US12525899

申请日：2007-03-09

申请人： Yong-tae Kim ,  Moon-jae Jho ,  Sung-soo Jung ,  Ho-chul Kim ,  Yong-hyeon Yun

发明人： Yong-tae Kim ,  Moon-jae Jho ,  Sung-soo Jung ,  Ho-chul Kim ,  Yong-hyeon Yun

IPC分类号： G01B7/287 ,  G01B17/04 ,  G01F3/24 ,  G01F3/30

CPC分类号： G01S7/5205

摘要： A performance inspection system for an array ultrasound transducer includes: a driver for selectively applying an electric signal to all or some parts of constituent channels of the array ultrasound transducer; an acoustic power measurement unit for measuring an ultrasound acoustic power emitted from individual channels receiving the same voltage from the driver; a radiation conductance conversion unit for measuring a voltage signal applied to each channel although the driver applies different voltages to the individual channels, and converting the measured voltage into an ultrasound acoustic power acquired when the same voltage is applied to the channels; and a channel uniformity estimation unit for estimating uniformity of the acoustic power value acquired by the radiation conductance conversion unit or uniformity of acoustic power values of the individual channels measured under the same voltage.

摘要翻译： 阵列超声波换能器的性能检查系统包括：用于选择性地将电信号施加到阵列超声换能器的构成通道的全部或部分的驱动器; 声功率测量单元，用于测量从驾驶员接收相同电压的各个通道发出的超声波声功率; 辐射电导转换单元，用于测量施加到每个通道的电压信号，尽管驱动器对各个通道施加不同的电压，并且将测量的电压转换成当将相同的电压施加到通道时获取的超声波功率; 以及信道均匀性估计单元，用于估计由辐射电导转换单元获取的声功率值的均匀性或在相同电压下测量的各个通道的声功率值的均匀性。

公开(公告)号：US20100313628A1

公开(公告)日：2010-12-16

申请号：US12525899

申请日：2007-03-09

申请人： Yong-tae Kim ,  Moon-jae Jho ,  Sung-soo Jung ,  Ho-chul Kim ,  Yong-hyeon Yun

发明人： Yong-tae Kim ,  Moon-jae Jho ,  Sung-soo Jung ,  Ho-chul Kim ,  Yong-hyeon Yun

IPC分类号： G01N29/30

CPC分类号： G01S7/5205

摘要： A performance inspection system for an array ultrasound transducer includes: a driver for selectively applying an electric signal to all or some parts of constituent channels of the array ultrasound transducer; an acoustic power measurement unit for measuring an ultrasound acoustic power emitted from individual channels receiving the same voltage from the driver; a radiation conductance conversion unit for measuring a voltage signal applied to each channel although the driver applies different voltages to the individual channels, and converting the measured voltage into an ultrasound acoustic power acquired when the same voltage is applied to the channels; and a channel uniformity estimation unit for estimating uniformity of the acoustic power value acquired by the radiation conductance conversion unit or uniformity of acoustic power values of the individual channels measured under the same voltage.

摘要翻译： 阵列超声波换能器的性能检查系统包括：用于选择性地将电信号施加到阵列超声换能器的构成通道的全部或部分的驱动器; 声功率测量单元，用于测量从驾驶员接收相同电压的各个通道发出的超声波声功率; 辐射电导转换单元，用于测量施加到每个通道的电压信号，尽管驱动器对各个通道施加不同的电压，并且将测量的电压转换成当将相同的电压施加到通道时获取的超声波功率; 以及信道均匀性估计单元，用于估计由辐射电导转换单元获取的声功率值的均匀性或在相同电压下测量的各个通道的声功率值的均匀性。

公开(公告)号：US07422949B2

公开(公告)日：2008-09-09

申请号：US11732765

申请日：2007-04-04

申请人： Tae-kwang Yu ,  Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

发明人： Tae-kwang Yu ,  Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC分类号： H01L29/72

CPC分类号： H01L29/66659 ,  H01L21/26586 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/7835

摘要： The present invention relates to a high voltage transistor and method of manufacturing the same. The high voltage transistor includes: a channel region which is formed in a semiconductor substrate; a gate insulating film which is formed on the channel region of the semiconductor substrate; a low concentration source region and a low concentration drain region having the channel region interposed therebetween and each being formed in the semiconductor substrate; a high concentration source region which is formed to be spaced away from the channel region by a first distance; a high concentration drain region which is formed to be spaced away from the channel region by a second distance that is larger than the first distance; a gate electrode which has a gate bottom portion interfacing with the gate insulating film over the channel region, and a gate top portion integrated with the gate bottom portion and protruding by a predetermined length from a top of the gate bottom portion to extend over the low concentration drain region; a first metal silicide layer which is formed on the high concentration source region; and a second metal silicide layer which is formed on the high concentration drain region.

摘要翻译： 本发明涉及高压晶体管及其制造方法。 高压晶体管包括：形成在半导体衬底中的沟道区; 形成在半导体衬底的沟道区上的栅极绝缘膜; 低浓度源极区和低浓度漏极区，其间具有沟道区，并且各自形成在半导体衬底中; 高浓度源区，其形成为与沟道区隔开第一距离; 高浓度漏区，其形成为与沟道区隔开距离大于第一距离的第二距离; 栅极电极，其具有与沟道区域上的栅极绝缘膜接合的栅极底部，以及与栅极底部一体化并且从栅极底部的顶部突出预定长度的栅极顶部，以在低于 浓度排水区; 形成在高浓度源区上的第一金属硅化物层; 以及形成在高浓度漏极区上的第二金属硅化物层。

公开(公告)号：US07345336B2

公开(公告)日：2008-03-18

申请号：US11000011

申请日：2004-12-01

申请人： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

发明人： Hee-seog Jeon ,  Seung-beom Yoon ,  Yong-tae Kim

IPC分类号： H01L29/792

CPC分类号： H01L27/11568 ,  H01L21/28282 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/7923

摘要： A semiconductor memory device having a self-aligned charge trapping layer and a method of manufacturing the same in which a consistent length of an ONO layer is ensured. Here, an insulating stacked structure is self-aligned to a bottom surface of conductive spacers.

摘要翻译： 具有自对准电荷捕获层的半导体存储器件及其制造方法，其中确保ONO层的一致长度。 这里，绝缘层叠结构与导电间隔物的底面自对准。