公开(公告)号：US08343818B2

公开(公告)日：2013-01-01

申请号：US12687287

申请日：2010-01-14

申请人： Huilong Zhu ,  Zhijiong Luo ,  Qingqing Liang ,  Haizhou Yin

发明人： Huilong Zhu ,  Zhijiong Luo ,  Qingqing Liang ,  Haizhou Yin

IPC分类号： H01L21/84

CPC分类号： H01L21/187 ,  H01L21/6835 ,  H01L21/84 ,  H01L27/12 ,  H01L29/1083 ,  H01L2221/6835 ,  H01L2221/68368

摘要： A method of forming an electrical device is provided that includes forming at least one semiconductor device on a first semiconductor layer of the SOI substrate. A handling structure is formed contacting the at least one semiconductor device and the first semiconductor layer. A second semiconductor layer and at least a portion of the dielectric layer of the SOI substrate are removed to provide a substantially exposed surface of the first semiconductor layer. A retrograded well may be formed by implanting dopant through the substantially exposed surface of the first semiconductor layer into a first thickness of the semiconductor layer that extends from the substantially exposed surface of the semiconductor layer, wherein a remaining thickness of the semiconductor layer is substantially free of the retrograded well dopant. The retrograded well may be laser annealed.

公开(公告)号：US20120292766A2

公开(公告)日：2012-11-22

申请号：US12990990

申请日：2010-09-19

申请人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

发明人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/522 ,  H01L21/32051 ,  H01L21/76823 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor structure and a manufacturing method thereof. The method comprises: providing a semiconductor substrate comprising semiconductor devices; depositing a copper diffusion barrier layer on the semiconductor substrate; forming a copper composite layer on the copper diffusion barrier layer; decomposing the copper composite at corresponding positions, where copper interconnection is to be formed, into copper according to the shape of the copper interconnection; and etching off the undecomposed copper composite and the copper diffusion barrier layer underneath, to interconnect the semiconductor devices. The present invention is adaptive for manufacturing interconnection in integrated circuits.

摘要翻译： 本发明提供一种半导体结构及其制造方法。 该方法包括：提供包括半导体器件的半导体衬底; 在所述半导体衬底上沉积铜扩散阻挡层; 在铜扩散阻挡层上形成铜复合层; 根据铜互连的形状，将要形成铜互连的相应位置处的铜复合物分解成铜; 并且在下面蚀刻未分解的铜复合物和铜扩散阻挡层，以使半导体器件互连。 本发明适用于制造集成电路中的互连。

公开(公告)号：US20120264262A1

公开(公告)日：2012-10-18

申请号：US13381014

申请日：2011-04-18

申请人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

发明人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

IPC分类号： H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/7833 ,  H01L29/7847 ,  H01L29/7848

摘要： The invention relates to a method for forming a semiconductor structure, comprising: providing a semiconductor substrate which comprises a dummy gate formed thereon, a spacer surrounding the dummy gate, source and drain regions formed on two sides of the dummy gate, respectively, and a channel region formed in the semiconductor substrate and below the dummy gate; removing the dummy gate to form a gate opening; forming a stressed material layer in the gate opening; performing an annealing to the semiconductor substrate, the stressed material layer having tensile stress characteristics during the annealing; removing the stressed material layer in the gate opening; and forming a gate in the gate opening. By the above steps, the stress memorization technique can be applied to the pMOSFET.

摘要翻译： 本发明涉及一种形成半导体结构的方法，包括：提供包括形成在其上的虚拟栅极的半导体衬底，围绕伪栅极的间隔物，分别形成在虚拟栅极两侧的源区和漏区，以及 形成在半导体衬底中并在虚拟栅极之下的沟道区; 去除虚拟门以形成门开口; 在闸门开口处形成应力材料层; 对所述半导体基板进行退火，所述应力材料层在退火时具有拉伸应力特性; 去除闸门开口中的应力材料层; 并在门开口形成门。 通过上述步骤，可以将应力记忆技术应用于pMOSFET。

公开(公告)号：US20120235244A1

公开(公告)日：2012-09-20

申请号：US13380482

申请日：2011-04-18

申请人： Haizhou Yin ,  Zhijiong Luo ,  Huilong Zhu

发明人： Haizhou Yin ,  Zhijiong Luo ,  Huilong Zhu

IPC分类号： H01L27/088 ,  H01L29/772 ,  H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/26586 ,  H01L21/28518 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/41775 ,  H01L29/456 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7835

摘要： A method for manufacturing a semiconductor structure comprises: providing a substrate, forming an active region on the substrate, forming a gate stack or a dummy gate stack on the active region, forming a source extension region and a drain extension region at opposite sides of the gate stack or dummy gate stack, forming a spacer on sidewalls of the gate stack or dummy gate stack, and forming a source and a drain on portions of the active region exposed by the spacer and the gate stack or dummy gate stack; removing at least a part of a source-side portion of the spacer, such that the source-side portion of the spacer has a thickness less than that of a drain-side portion of the spacer; and forming a contact layer on portions of the active region exposed by the spacer and the gate stack or dummy gate stack. Correspondingly, the present invention further provides a semiconductor structure. The present invention is beneficial to the reduction of the contact resistance of the source extension region and meanwhile can also reduce the parasitic capacitance between the gate and the drain extension region.

摘要翻译： 一种用于制造半导体结构的方法，包括：提供衬底，在衬底上形成有源区，在有源区上形成栅叠层或虚栅极叠层，在源极延伸区和漏极延伸区的相对两侧形成 栅极堆叠或伪栅极堆叠，在栅极堆叠或伪栅极堆叠的侧壁上形成间隔物，以及在由间隔物和栅极堆叠或伪栅极堆叠暴露的有源区域的部分上形成源极和漏极; 去除所述间隔物的源极侧部分的至少一部分，使得所述间隔物的源极侧部分的厚度小于所述间隔物的漏极侧部分的厚度; 以及在由间隔件和栅极堆叠或虚拟栅极堆叠暴露的有源区域的部分上形成接触层。 相应地，本发明还提供一种半导体结构。 本发明有益于降低源延伸区域的接触电阻，同时还可以减小栅极和漏极延伸区域之间的寄生电容。

公开(公告)号：US20120223331A1

公开(公告)日：2012-09-06

申请号：US13063745

申请日：2011-03-02

申请人： Huilong Zhu ,  Qingqing Liang ,  Zhijiong Luo ,  Haizhou Yin

发明人： Huilong Zhu ,  Qingqing Liang ,  Zhijiong Luo ,  Haizhou Yin

IPC分类号： H01L29/12 ,  H01L21/336

CPC分类号： H01L29/785 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7849

摘要： A semiconductor device comprises: a semiconductor substrate located on an insulating layer; and an insulator located on the insulating layer and embedded in the semiconductor substrate, wherein the insulator applies stress therein to the semiconductor substrate. A method for forming a semiconductor device comprises: forming a semiconductor substrate on an insulating layer; forming a cavity within the semiconductor substrate so as to expose the insulating layer; forming an insulator in the cavity, wherein the insulator applies stress therein to the semiconductor substrate. It facilitates the reduction of the short channel effect, the resistance of source/drain regions and parasitic capacitance.

摘要翻译： 半导体器件包括：位于绝缘层上的半导体衬底; 以及绝缘体，其位于所述绝缘层上并且嵌入所述半导体衬底中，其中所述绝缘体在其中向所述半导体衬底施加应力。 一种形成半导体器件的方法包括：在绝缘层上形成半导体衬底; 在所述半导体衬底内形成空腔以暴露所述绝缘层; 在空腔中形成绝缘体，其中绝缘体在其中向半导体衬底施加应力。 它有助于减少短沟道效应，源极/漏极区域的电阻和寄生电容。

公开(公告)号：US20120217553A1

公开(公告)日：2012-08-30

申请号：US13063737

申请日：2010-06-28

申请人： Zhijiong Luo ,  Haizhou Yin ,  Huilong Zhu

发明人： Zhijiong Luo ,  Haizhou Yin ,  Huilong Zhu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/823443 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628

摘要： The present invention provides a semiconductor structure, comprising: a substrate; a gate formed on the substrate, and a source and drain formed in the substrate and disposed at two sides of the gate; raised portions formed on the source and the drain, respectively, a height of the raised portions being approximate to a height of the gate; and a metal silicide layer and contact holes formed on the raised portions and on the gate. By virtue of the raised portions added to the source/drain in an embodiment of the present invention, the height difference between the gate and the source/drain may be decreased, such that the formation of the contact holes becomes much easier.

摘要翻译： 本发明提供一种半导体结构，包括：基板; 形成在基板上的栅极，以及形成在基板中并设置在栅极两侧的源极和漏极; 分别形成在源极和漏极上的凸起部分，凸起部分的高度接近门的高度; 以及形成在凸起部分和栅极上的金属硅化物层和接触孔。 由于在本发明的一个实施例中，由于在源极/漏极上添加的凸起部分，栅极和源极/漏极之间的高度差可能会降低，使得接触孔的形成变得容易得多。

公开(公告)号：US20120181664A1

公开(公告)日：2012-07-19

申请号：US13264063

申请日：2010-04-14

申请人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

发明人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo

IPC分类号： H01L29/06 ,  H01L21/308 ,  H01L29/24 ,  H01L29/16

CPC分类号： H01L31/0392 ,  H01L31/035281 ,  Y02E10/50

摘要： The present invention proposes a strip plate structure and a method of manufacturing the same. In one embodiment, the strip plate structure comprises a strip plate array comprising a plurality of strip plates arranged in a predetermined direction with spacing, each of said strip plates including a first surface facing one side direction of the strip plate structure and a second surface facing an substantially opposite side direction of the strip plate structure; and a plurality of strip sheets, each strip sheet alternately abutting either the first surfaces or the second surfaces of two adjacent strip plates.

摘要翻译： 本发明提出一种带状板结构及其制造方法。 在一个实施例中，带状板结构包括带板阵列，其包括以预定方向排列的多个带状板，每个带状板包括面向带状板结构的一个侧面方向的第一表面和面向 所述带状板结构的基本相反的侧面方向; 以及多个条状片，​​每个条带交替地邻接两个相邻带状板的第一表面或第二表面。

公开(公告)号：US20120168823A1

公开(公告)日：2012-07-05

申请号：US13377766

申请日：2011-04-25

申请人： Zhijiong Luo ,  Haizhou Yin ,  Huilong Zhu

发明人： Zhijiong Luo ,  Haizhou Yin ,  Huilong Zhu

IPC分类号： H01L29/26 ,  H01L21/66

CPC分类号： H01L21/823807 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823878 ,  H01L21/8258 ,  H01L29/66477

摘要： The present application discloses a semiconductor device and a method for forming the same. The method comprises: providing a first semiconductor layer and forming a first STI in the first semiconductor layer; determining a selected region in the first semiconductor layer, and making a portion of the first semiconductor layer in the selected region recessed; and in the selected region, epitaxially growing a second semiconductor layer on the first semiconductor layer, wherein the material of the second semiconductor layer is different from that of the first semiconductor layer. According to the present invention, a structure with a second semiconductor layer selectively epitaxially grown and embedded in the first semiconductor layer can be formed by a simple process, and defects generated during the epitaxial growth process can be further reduced.

摘要翻译： 本申请公开了一种半导体器件及其形成方法。 该方法包括：提供第一半导体层并在第一半导体层中形成第一STI; 确定所述第一半导体层中的选定区域，以及使所述选定区域中的所述第一半导体层的一部分凹陷; 并且在所选择的区域中，在第一半导体层上外延生长第二半导体层，其中第二半导体层的材料与第一半导体层的材料不同。 根据本发明，可以通过简单的工艺形成具有选择性地外延生长并嵌入第一半导体层中的第二半导体层的结构，并且可以进一步减少在外延生长工艺期间产生的缺陷。

公开(公告)号：US20120104495A1

公开(公告)日：2012-05-03

申请号：US13144182

申请日：2011-03-04

申请人： Huilong Zhu ,  Qingqing Liang ,  Haizhou Yin ,  Zhijiong Luo

发明人： Huilong Zhu ,  Qingqing Liang ,  Haizhou Yin ,  Zhijiong Luo

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present application discloses a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention adjusts a threshold voltage with a common contact, which has a portion outside the source or drain region extending to the back-gate region and provides an electrical contact of the source or drain region and the back-gate region, which leads to a simple manufacturing process, an increased integration level and a lowered manufacture cost. Moreover, the asymmetric design of the back-gate structure further increases the threshold voltage and improves the performance of the device.

摘要翻译： 本申请公开了一种半导体结构及其制造方法。 根据本发明的半导体结构利用公共接触来调节阈值电压，该公共触点具有延伸到背栅极区域的源极或漏极区域之外的部分并且提供源极或漏极区域与背栅极的电接触 区域，这导致简单的制造过程，增加的集成水平和降低的制造成本。 此外，背栅结构的非对称设计进一步增加了阈值电压并提高了器件的性能。

公开(公告)号：US20120038006A1

公开(公告)日：2012-02-16

申请号：US12937652

申请日：2010-07-25

申请人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo ,  Qiagqing Liang

发明人： Huilong Zhu ,  Haizhou Yin ,  Zhijiong Luo ,  Qiagqing Liang

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/66636 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

摘要： The present application discloses a semiconductor device comprising a fin of semiconductive material formed from a semiconductor layer over a semiconductor substrate and having two opposing sides perpendicular to the main surface of the semiconductor substrate; a source region and a drain region provided in the semiconductor substrate adjacent to two ends of the fin and being bridged by the fin; a channel region provided at the central portion of the fin; and a stack of gate dielectric and gate conductor provided at one side of the fin, where the gate conductor is isolated from the channel region by the gate dielectric, and wherein the stack of gate dielectric and gate conductor extends away from the one side of the fin in a direction parallel to the main surface of the semiconductor substrate, and insulated from the semiconductor substrate by an insulating layer. The semiconductor device has an improved short channel effect and a reduced parasitic capacitance and resistance, which contributes to an improved electrical property and facilitates scaling down of the transistor.

摘要翻译： 本申请公开了一种半导体器件，其包括由半导体衬底上的半导体层形成并具有垂直于半导体衬底的主表面的两个相对侧的半导体材料的鳍; 源极区域和漏极区域，设置在所述半导体衬底中，邻近所述鳍片的两端并被所述鳍片桥接; 设置在所述翅片的中央部的通道区域; 以及设置在鳍的一侧的栅极电介质和栅极导体的堆叠，其中栅极导体通过栅极电介质与沟道区隔离，并且其中栅极电介质和栅极导体的堆叠远离 翅片在平行于半导体衬底的主表面的方向上，并且通过绝缘层与半导体衬底绝缘。 半导体器件具有改善的短沟道效应和减小的寄生电容和电阻，这有助于改善电性能并且有助于晶体管的缩小。