公开(公告)号：US07687110B2

公开(公告)日：2010-03-30

申请号：US11903397

申请日：2007-09-20

Applicant: Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn ,  Richard C. Yi

Inventor： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn ,  Richard C. Yi

IPC: C23C16/00

CPC classification number: C23C16/4402

Abstract: We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.

Abstract translation: 我们已经设计了一种可用于从用于产生反应性前体蒸气的气态前体组合物中除去杂质的装置，其中在大气下条件下形成薄膜/层。 当层沉积设备在单一步骤期间提供量的不同组合的反应物的精确添加时或当层形成过程中存在多个不同的单独步骤时，该方法是特别有用的，其中杂质的存在具有显着的影响 在被充电的反应物的量和沉积层的反应物混合物的总体组成。 当液体反应性前体的蒸气压在大气压下小于约250乇时，该方法特别有用。

公开(公告)号：US20100075034A1

公开(公告)日：2010-03-25

申请号：US12592183

申请日：2009-11-19

Applicant: Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC: C23C16/52

CPC classification number: B82Y30/00 ,  C23C16/0227 ,  C23C16/402

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

公开(公告)号：US20080274281A1

公开(公告)日：2008-11-06

申请号：US12074497

申请日：2008-03-03

Applicant: Boris Kobrin ,  William R. Ashurst ,  Jeffrey D. Chinn ,  Romuald Nowak

Inventor： Boris Kobrin ,  William R. Ashurst ,  Jeffrey D. Chinn ,  Romuald Nowak

IPC: C23C16/00

CPC classification number: C23C16/0272 ,  B05D1/185 ,  B05D1/60 ,  B05D3/142 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/56

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the attachment of organic films/coatings containing a variety of functional groups on halogen-containing substrates. The substrate surface is halogenated using a vaporous halogen-containing compound, followed by a reaction with at least one organic molecule containing at least one nucleophilic functional group. Halogenation of the substrate surface and subsequent reaction with the organic molecule are carried out in the same process chamber in a manner such that the halogenated substrate surface does not lose its functionality prior to reaction with the nucleophilic functional group(s) on the organic molecule.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在含卤基底上附着含有各种官能团的有机膜/涂层。 使用含卤素的化合物将底物表面卤化，随后与至少一个含有至少一个亲核官能团的有机分子反应。 底物表面的卤化和随后与有机分子的反应在相同的处理室中进行，使得卤化的底物表面在与有机分子上的亲核官能团反应之前不失去其功能。

公开(公告)号：US20070020392A1

公开(公告)日：2007-01-25

申请号：US11528093

申请日：2006-09-26

Applicant: Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

Inventor： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

IPC: C23C16/00 ,  B05D1/36 ,  B05D3/00

CPC classification number: C23C16/455 ,  B05D1/185 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/402 ,  C23C16/448

Abstract: An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

Abstract translation: 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于有机的层直接沉积在基于氧化物的层上。 通常，施加一系列交替层的氧化物基层和基于有机层。