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53 条记录 (耗时 0.026 秒)

    Controlled deposition of silicon-containing coatings adhered by an oxide layer
    1.
    发明授权
    Controlled deposition of silicon-containing coatings adhered by an oxide layer 有权
    由氧化物层附着的含硅涂层的控制沉积

    公开(公告)号：US08178162B2

    公开(公告)日：2012-05-15

    申请号：US12592183

    申请日：2009-11-19

    申请人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

    IPC分类号： C23C16/00

    CPC分类号： B82Y30/00 ,  C23C16/0227 ,  C23C16/402

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

    Controlled vapor deposition of biocompatible coatings over surface-treated substrates
    3.
    发明授权
    Controlled vapor deposition of biocompatible coatings over surface-treated substrates 有权
    经表面处理的基材上生物相容性涂层的控制气相沉积

    公开(公告)号：US07695775B2

    公开(公告)日：2010-04-13

    申请号：US11295129

    申请日：2005-12-05

    申请人： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak

    发明人： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak

    IPC分类号： H05H1/00 ,  B05D3/04 ,  B05D3/10 ,  B05D3/06

    CPC分类号： B05D1/60 ,  B05D3/064 ,  B82Y30/00

    摘要： We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.

    摘要翻译： 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物功能装置，生物MEMS装置以及制造用于生物应用的微流体装置。 在一个重要的实施方案中，使用臭氧和UV辐射的组合处理硅氧烷底物表面，以使硅氧烷表面更亲水，随后在硅氧烷底物的处理表面上原位施加功能性涂层。

    Wear-resistant, carbon-doped metal oxide coatings for MEMS and nanoimprint lithography
    4.
    发明申请
    Wear-resistant, carbon-doped metal oxide coatings for MEMS and nanoimprint lithography 审中-公开
    用于MEMS和纳米压印光刻的耐磨碳掺杂金属氧化物涂层

    公开(公告)号：US20100068489A1

    公开(公告)日：2010-03-18

    申请号：US12150249

    申请日：2008-04-24

    申请人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

    IPC分类号： B32B5/00 ,  B32B9/00 ,  B05D5/12 ,  B28B7/38

    CPC分类号： C23C16/403 ,  B81B3/0075 ,  B81C99/0085 ,  B81C2201/0153 ,  B81C2201/112 ,  C23C16/405 ,  C23C16/45525

    摘要： The carbon-doped metal oxide films described provide a low coefficient of friction, typically ranging from about 0.05 to about 0.4. Applied over a silicon substrate, for example, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion for a coated MEMS cantilever beam is less than 10 μJ/m2. The films provide unexpectedly low water vapor transmission. In addition, the carbon-doped metal oxide films are excellent when used as a surface release coating for nanoimprint lithography. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

    摘要翻译： 所述的碳掺杂的金属氧化物膜提供低摩擦系数，通常为约0.05至约0.4。 施加在硅衬底上，例如，碳掺杂的金属氧化物膜提供抗静电性质，其中测量的涂覆的MEMS悬臂梁的粘附力小于10μJ/ m 2。 这些膜提供了意想不到的低水蒸汽传输。 此外，当用作纳米压印光刻的表面剥离涂层时，碳掺杂的金属氧化物膜是优异的。 碳掺杂的金属氧化物膜中的碳含量为约5原子％至约20原子％。

    Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
    5.
    发明申请
    Apparatus and method for controlled application of reactive vapors to produce thin films and coatings 有权
    用于控制应用反应蒸气以产生薄膜和涂层的装置和方法

    公开(公告)号：US20060213441A1

    公开(公告)日：2006-09-28

    申请号：US11445706

    申请日：2006-06-02

    申请人： Boris Kobrin ,  Romuald Nowak ,  Richard Yi ,  Jeffrey Chinn

    发明人： Boris Kobrin ,  Romuald Nowak ,  Richard Yi ,  Jeffrey Chinn

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45557 ,  B05D1/60 ,  B05D3/142 ,  B82Y30/00 ,  C23C16/4485 ,  C23C16/45561

    摘要： A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

    摘要翻译： 一种用于在基底上施加薄层和涂层的气相沉积方法和装置。 该方法和装置可用于制造电子设备，微机电系统（MEMS），生物MEMS装置，微型和纳米压印光刻以及微流体装置。 用于实施该方法的装置提供了在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 该装置提供在单一步骤期间或当涂层形成过程中存在许多不同的单独步骤时精确添加量的不同组合的反应物。 将蒸气形式的每种反应物的精确加入在指定温度下计量到预定设定体积至指定压力，以提供高精度的反应物。

    Precursor preparation for controlled deposition coatings
    6.
    发明申请
    Precursor preparation for controlled deposition coatings 审中-公开
    控制沉积涂料的前体准备

    公开(公告)号：US20060201425A1

    公开(公告)日：2006-09-14

    申请号：US11076390

    申请日：2005-03-08

    申请人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey Chinn ,  Richard Yi

    发明人： Boris Kobrin ,  Romuald Nowak ,  Jeffrey Chinn ,  Richard Yi

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4402

    摘要： We have devised an apparatus useful for and a method of removing impurities from vaporous precursor compositions used to generate reactive precursor vapors from which thin films/layers are formed under sub-atmospheric conditions. The method is particularly useful when the layer deposition apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the layer formation process, where the presence of impurities has a significant affect on both the quantity of reactants being charged and the overall composition of the reactant mixture from which the layer is deposited. The method is particularly useful when the vapor pressure of a liquid reactive precursor is less than about 250 Torr at atmospheric pressure.

    摘要翻译： 我们已经设计了一种可用于从用于产生反应性前体蒸气的气态前体组合物中除去杂质的装置，其中在大气下条件下形成薄膜/层。 当层沉积设备在单一步骤期间提供量的不同组合的反应物的精确添加时或当层形成过程中存在多个不同的单独步骤时，该方法是特别有用的，其中杂质的存在具有显着的影响 在被充电的反应物的量和沉积层的反应物混合物的总体组成。 当液体反应性前体的蒸气压在大气压下小于约250乇时，该方法特别有用。

    High density plasma CVD and etching reactor
    8.
    发明授权
    High density plasma CVD and etching reactor 失效
    高密度等离子体CVD和蚀刻反应器

    公开(公告)号：US5976308A

    公开(公告)日：1999-11-02

    申请号：US707607

    申请日：1996-09-05

    申请人： Kevin Fairbairn ,  Romuald Nowak

    发明人： Kevin Fairbairn ,  Romuald Nowak

    IPC分类号： C23C14/34 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46 ,  C23F1/02 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3244

    摘要： In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another aspect, invention is embodied in a plasma reactor including apparatus for spraying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a still further aspect, the invention is embodied in a plasma reactor including a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings. In yet another aspect, the invention is embodied in a plasma reactor including a conductive dome-shaped electrode overlying the wafer and being connectable to an electrical potential. In a still further aspect, the invention is embodied in a plasma process, including the steps of providing a vacuum processing chamber having a dome-shaped antenna, feeding a processing gas including an electronegative gas into the chamber, resonantly coupling an RF electrical signal to the antenna, and non-resonantly and inductively coupling electromagnetic energy from the antenna into a plasma formed in the processing chamber from the processing gas.

    摘要翻译： 一方面，本发明体现在一种RF感应耦合等离子体反应器中，该等离子体反应器包括用于处理晶片的真空室，用于将反应气体引入室内的一个或多个气体源，以及能够将RF能量辐射到室中产生的天线 其中的等离子体通过感应耦合，天线位于二维曲面中。 在另一方面，本发明体现在等离子体反应器中，该等离子体反应器包括用于以超音速喷射反应气体朝向位于晶片上方的腔室部分的装置。 在另一方面，本发明体现在等离子体反应器中，该等离子体反应器包括用于将反应气体喷射到覆盖晶片的腔室的部分中的多个喷嘴开口面对晶片的平面喷雾喷头， 在多个喷嘴开口中的相邻喷嘴开口之间的平面喷嘴，多个磁体被定向成从喷嘴开口排出离子。 在另一方面，本发明体现在等离子体反应器中，该等离子体反应器包括覆盖在晶片上并可连接到电位的导电圆顶状电极。 在另一方面，本发明体现在等离子体工艺中，包括以下步骤：提供具有圆顶状天线的真空处理室，将包含电负性气体的处理气体送入室中，将RF电信号共振地耦合到 天线，并且将来自天线的电磁能非谐振和电感耦合到处理室中形成的等离子体中。