公开(公告)号：US5135406A

公开(公告)日：1992-08-04

申请号：US734702

申请日：1991-07-23

Applicant: Hiroshi Ishikawa

Inventor： Hiroshi Ishikawa

IPC: H01M10/46 ,  H01R27/00

CPC classification number: H01R27/00

Abstract: An electrical apparatus is provided in which in the situation as shown in FIGS. 1-4 in which power inlet pins are exposed, a user can use the electric appliance by connecting A.C. cord 20 to power inlet pins 5 without danger that a user might touch slide plugs 4 because they are completely covered by slide cover 7. In this situation, if a user pushes finger actuating portion 8 of slide cover 7 in the direction as shown by an arrow in FIG. 4, power inlet pins 5 are covered by slide cover 7 and slide plugs 4 protrude out of plug slits 32 by rotation of pinion gear portion 3 which engage with rack gear 17 and 18 as shown in FIGS. 5 and 6. In this situation, the electric appliance can be charged with slide plugs 4, while power inlet pins 5 are covered by slide cover 7, so that there is no danger that a user might touch power inlet pins 5.

公开(公告)号：US5128730A

公开(公告)日：1992-07-07

申请号：US727317

申请日：1991-07-02

Applicant: David J. Coe ,  David H. Paxman ,  Franciscus A. C. M. Schoofs

Inventor： David J. Coe ,  David H. Paxman ,  Franciscus A. C. M. Schoofs

IPC: G05F3/24 ,  H01L21/336 ,  H01L27/04 ,  H01L27/07 ,  H01L27/088 ,  H01L29/78 ,  H03K17/06 ,  H03K17/687 ,  H03K17/78

CPC classification number: H01L29/7816 ,  H01L27/0727 ,  H01L27/088 ,  H01L29/7801 ,  H01L29/7802 ,  H03K17/06 ,  H03K17/687 ,  H01L29/41766

Abstract: A semiconductor device and a circuit suitable for use in an intelligent power switch include an insulated gate field effect transistor (IGFET) (T2) and a power semiconductor switch (T1). The insulated gate field transistor IGFET (T2) is provided by a semiconductor body (6) which has a first region (7) of one conductivity type adjacent a given surface (6a) of the semiconductor body with the first region (7) forming at least part of a conductive path to a first main electrode of the power semiconductor switch. A second region (8) of the opposite conductivity type is provided within the first region adjacent the given surface (6a) and a third region (11) of the one conductivity type is provided adjacent the given surface (6a) within the second region (8), an area of the second region (8) underlying an insulated gate (14) provided on the given surface (6a) for defining a conduction channel (15) providing a gateable connection between the third region (11) and a fourth region (12) of the one conductivity type. The third and fourth regions (11 and 12) forming the source and drain regions of the IGFET and the second and third regions (8 and 11) together provide a zener diode, a conductive path being provided to the second region remote from the area underlying the insulated gate for reverse-biassing the zener diode. The IGFET may include a synchronous rectifier of a charge pump for providing a gate voltage signal to the power semiconductor switch which may be a power MOSFET (T2).

Abstract translation: 适用于智能电源开关的半导体器件和电路包括绝缘栅场效应晶体管（IGFET）（T2）和功率半导体开关（T1）。 绝缘栅场效应晶体管IGFET（T2）由半导体本体（6）提供，半导体本体（6）具有与半导体本体的给定表面（6a）相邻的一种导电类型的第一区域（7），第一区域（7）形成在 到功率半导体开关的第一主电极的导电路径的至少一部分。 相邻导电类型的第二区域（8）设置在与给定表面（6a）相邻的第一区域内，并且在第二区域内邻近给定表面（6a）设置一个导电类型的第三区域（11） 8），设置在给定表面（6a）上的绝缘栅极（14）下方的第二区域（8）的区域，用于限定在第三区域（11）和第四区域（11）之间提供可栅极连接的导电通道（15） （12）的一种导电类型。 形成IGFET和第二和第三区域（8和11）的源极和漏极区域的第三和第四区域（11和12）一起提供齐纳二极管，导电路径被提供到远离其下面的区域的第二区域 用于反向偏置齐纳二极管的绝缘栅极。 IGFET可以包括用于向可以是功率MOSFET（T2）的功率半导体开关提供栅极电压信号的电荷泵的同步整流器。

公开(公告)号：US5126985A

公开(公告)日：1992-06-30

申请号：US702150

申请日：1991-05-14

Applicant: Johannes H. M. Spruit ,  Hendricus F. J. J. Van Tongeren ,  Piet F. Bongers ,  Bernardus A. J. Jacobs

Inventor： Johannes H. M. Spruit ,  Hendricus F. J. J. Van Tongeren ,  Piet F. Bongers ,  Bernardus A. J. Jacobs

IPC: G11B5/02 ,  G11B11/10 ,  G11B11/105 ,  G11B13/04

CPC classification number: G11B11/1053 ,  G11B11/10513 ,  G11B13/045

Abstract: When information is recorded on a record carrier (1) of the thermomagnetic type, the thermomagnetic recording layer (4) is scanned by a magnetic field generated by a magnetic-field modulator (7). The magnetic field is modulated depending on an information signal (Vi). Moreover, the scanned portion of the record carrier (1) is at the same time locally heated by radiation pulses (10) generated by an optical scanning device (5). By means of radiation pulses (10) the record carrier is heated above a write temperature (Ts), above which temperature the magnetization of the record carrier assumes the direction dictated by the magnetic field. A synchronizing circuit (9) generates the control signal (Vm) for modulating the magnetic field and the control signal (Vr) for generating the radiation pulses, in such a way that at the end of the radiation pulses the field strength is sufficiently high for the heated area of the record carrier to be magnetized in the directio dictated by the magnetic field.

Abstract translation: 当信息被记录在热磁型的记录载体（1）上时，热磁记录层（4）被磁场调制器（7）产生的磁场扫描。 根据信息信号（Vi）来调制磁场。 此外，由光学扫描装置（5）产生的辐射脉冲（10）局部地加热记录载体（1）的扫描部分。 通过辐射脉冲（10），记录载体被加热到高于写入温度（Ts），高于该温度，记录载体的磁化取决于由磁场决定的方向。 同步电路（9）产生用于调制磁场的控制信号（Vm）和用于产生辐射脉冲的控制信号（Vr），使得在辐射脉冲结束时，场强足够高， 由磁场决定的要被磁化的记录载体的加热区域。

公开(公告)号：US5124515A

公开(公告)日：1992-06-23

申请号：US427439

申请日：1989-10-24

Applicant: Frans Mous

Inventor： Frans Mous

IPC: H01H13/08 ,  H01H13/68 ,  H01H15/10

CPC classification number: H01H13/68 ,  H01H13/08 ,  H01H15/102

Abstract: A switching mechanism is provided including a control member and a switching element which is coupled to the control member and by means of a coupling element can be moved between a first and a second position. The switching mechanism includes two coupling elements which are arranged in series in the switching direction, each coupling element being constituted by a hinging V-shaped member, a point of intersection of a V-shaped member being alternately located within range for action thereon by the control member.

公开(公告)号：US5121355A

公开(公告)日：1992-06-09

申请号：US563737

申请日：1990-08-03

Applicant: Wilhelmus C. H. Gubbels ,  Jozef L. van Meerbergen

Inventor： Wilhelmus C. H. Gubbels ,  Jozef L. van Meerbergen

IPC: G11C11/34 ,  G11C8/00 ,  G11C11/41

CPC classification number: G11C8/00

Abstract: Increasing the storage capacity of high-performance signal processors while maintaining the original RAM cell necessitates modification of the entire lay-out of the circuit. The invention relates to the once-only design of peripheral circuitry which provides control of blocks of 4 full CMOS RAM cells (easy to process) or 9 double-layer polysilicon cells (more difficult to process, but having smaller dimensions). It is defined in the RAM peripheral circuitry whether all 9 cells can be accessed (memory capacity from 2.sup.xx n to (2.sup.xx (n+1)+2.sup.xx (n-2)) or 8 cells can be accessed (memory capacity from 2.sup.x n to 2.sup.xx (n+1).

Abstract translation: 在保持原始RAM单元的同时增加高性能信号处理器的存储容量需要修改电路的整个布局。 本发明涉及提供对4个完整CMOS RAM单元（易于处理）或9个双层多晶硅单元（更难以处理但具有较小尺寸）的块的控制的外围电路的一次性设计。 在RAM外围电路中定义是否可以访问所有9个单元（存储器容量从2xxn到（2xx（n + 1）+ 2xx（n-2））或8个单元可以访问（存储器容量从2xn到2xx n + 1）。

公开(公告)号：US5121063A

公开(公告)日：1992-06-09

申请号：US752194

申请日：1991-08-20

Applicant: Jorg M. Kerkow ,  Heinrich Pryschelski

Inventor： Jorg M. Kerkow ,  Heinrich Pryschelski

IPC: G01R27/28

CPC classification number: G01R27/28

Abstract: An arrangement for determining on approximation the equivalent circuit diagram of an electrical or electronic element at high frequencies includes a measuring apparatus (4), to which the element to be represented as a two-port element (59) or a one-port element (1) is connected through connection members (2; 57, 58, 60) and which measures over a preselected frequency range the parameters of the stray matrix of the two-port element of the impedance or the reflection factor of the one-port element with the connection members. To the measuring apparatus (4) is connected an evaluation circuit (7), which corrects the measurement result by inclusion of two-port parameters of the connection member(s) determined before the measurement and which calculates for a preselected equivalent circuit diagram of the element from the corrected measurement result values of the equivalent circuit diagram elements by means of an optimization strategy.

Abstract translation: 用于近似确定电气或电子元件在高频处的等效电路图的装置包括测量装置（4），要被表示为双端口元件（59）或单端口元件（ 1）通过连接构件（2; 57,58,60）连接，并且在预选频率范围内测量阻抗的两端口元件的杂散矩阵的参数或单端口元件的反射系数与 连接成员。 连接到测量装置（4）的评估电路（7），其通过包括在测量之前确定的连接构件的两端口参数来校正测量结果，并且计算出预定的等效电路图 通过优化策略从等效电路图元素的校正测量结果值中获取元素。

公开(公告)号：US5119558A

公开(公告)日：1992-06-09

申请号：US612951

申请日：1990-11-13

Applicant: Wilhelmus P. M. M. van Erp ,  Theo T. de Jong

Inventor： Wilhelmus P. M. M. van Erp ,  Theo T. de Jong

IPC: B26B19/14 ,  B26B19/38

CPC classification number: B26B19/384

Abstract: A shaving apparatus is provided having at least one cutting unit comprising an external cutting member and an internal cutting member which is rotatable relative to the external cutting member, the external cutting member being formed with elongate hair-entry apertures, the longitudinal bounding walls of an aperture being substantially parallel. In order to improve the shaving performance the bounding walls of a hair-entry aperture are inclined from the outside towards the inside in the driving direction.

公开(公告)号：US5119339A

公开(公告)日：1992-06-02

申请号：US307657

申请日：1989-02-06

Applicant: Lucas Heusler

Inventor： Lucas Heusler

IPC: G11C17/00 ,  G11C16/06 ,  G11C16/30

CPC classification number: G11C16/30 ,  G11C16/06

Abstract: Circuit includes an (E)EPROM and a programming voltage generator. This generator has a charge pump, a programming voltage controller and an edge controller which limits the increase of the programming voltage per unit of time. In the memory circuit, the controllers are fed back to the charge pump in order to switch the charge pump on or off in dependence on the programming voltage variation.

公开(公告)号：US5111054A

公开(公告)日：1992-05-05

申请号：US638226

申请日：1991-01-04

Applicant: Hendrik N. Slingerland

Inventor： Hendrik N. Slingerland

IPC: H01J37/18 ,  H05H5/02

CPC classification number: H01J37/18 ,  H01J2237/186

Abstract: A heat-actuated valve is inserted between a first vacuum space and a further vacuum space in a particle beam apparatus. The valve is preferably activatable by the temperature required for evacuating first vacuum chamber by heating. Preferably, the valve device itself is also evacuatable by heating; this can be readily realized by avoiding the use of non-metal valve members when the valve is inserted between two spaces wherebetween a compartively small absolute difference in pressure exists, in the closed condition of the valve.

Abstract translation: 热致动阀被插入在第一真空空间和粒子束装置中的另外的真空空间之间。 优选地，阀可以通过加热来抽空第一真空​​室所需的温度来激活。 优选地，阀装置本身也可通过加热排空; 在阀的关闭状态下，当阀插入存在压差小的绝对压差之间的两个空间之间时，通过避免使用非金属阀构件，可以容易地实现这一点。

公开(公告)号：US5109488A

公开(公告)日：1992-04-28

申请号：US316720

申请日：1989-02-28

Applicant: Hendrik Dijkstra ,  Cornelis M. Huizer ,  Robert J. Sluijter

Inventor： Hendrik Dijkstra ,  Cornelis M. Huizer ,  Robert J. Sluijter

IPC: G06F5/06 ,  G06F7/78 ,  G06F12/02 ,  G11C19/00

CPC classification number: G06F7/785

Abstract: A data processing system buffers sequential data for the duration of cyclically recurrent delay times. Memory location allocation is performed in such a way, that the memory is used efficiently without data-shifting after a read-out, and that the address generator is fairly simple.