Photomultiplier having a photocathode comprised of semiconductor material
    32.
    发明授权
    Photomultiplier having a photocathode comprised of semiconductor material 失效
    具有由半导体材料构成的光电阴极的光电倍增管

    公开(公告)号:US5710435A

    公开(公告)日:1998-01-20

    申请号:US580057

    申请日:1995-12-20

    CPC classification number: H01J1/34 H01J43/08 H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

    Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时,形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面,并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时,光电子通过电场被加速到发射表面。 光电子在该电场加速下获得能量,并且在电子发射层中转移到更高能级的导带,并发射到真空中。

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