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    Lower vessel of RH degasser
    3.
    发明授权
    Lower vessel of RH degasser 有权
    RH脱气机的下部容器

    公开(公告)号：US09170052B2

    公开(公告)日：2015-10-27

    申请号：US13824733

    申请日：2011-10-07

    Applicant: Yoshiyuki Nakamura ,  Hisaki Kato ,  Shinya Yoshimitsu ,  Hiroharu Ido ,  Hiroshi Nomura

    Inventor： Yoshiyuki Nakamura ,  Hisaki Kato ,  Shinya Yoshimitsu ,  Hiroharu Ido ,  Hiroshi Nomura

    IPC: C21C7/10 ,  F27D1/04 ,  C21C1/06

    CPC classification number: F27D1/04 ,  C21C1/06 ,  C21C7/10 ,  F27D1/045

    Abstract: A bottom part refractory includes a center part refractory, an arrangement refractory which is arranged contiguously with the center part refractory, and a connection refractory which is arranged at a position where at least a portion of the connection refractory overlaps with a vertically downward projection view of a side wall refractory. The connection refractory which is contiguously arranged with the arrangement refractory is constituted of two or more force transmission refractories arranged in the direction toward the arrangement refractory from the side-wall refractory. Opposedly facing surfaces between the force transmission refractories at least at a position among the force transmission refractories are inclined such that upper portions of the opposedly facing surfaces are positioned on a more inner side of a bottom portion than lower portions of the opposedly facing surfaces are positioned.

    Abstract translation: 底部耐火材料包括中心部分耐火材料，与中心部件耐火材料连续布置的配置耐火材料，以及连接耐火材料，其设置在连接耐火材料的至少一部分与垂直向下投影的重叠部分 侧壁耐火材料。 与排列耐火材料连续布置的连接耐火材料由从侧壁耐火材料朝向排列耐火材料的方向布置的两个或更多个力传递耐火材料构成。 至少在力传递耐火材料之间的位置处的力传递耐火材料之间的面对面的表面倾斜，使得相对面的表面的上部位于底部的比内侧相对的表面的下部更靠内侧 。

    Spectroscopic analyzing apparatus
    4.
    发明授权
    Spectroscopic analyzing apparatus 失效
    光谱分析仪

    公开(公告)号：US07403286B2

    公开(公告)日：2008-07-22

    申请号：US11441356

    申请日：2006-05-26

    Applicant: Hisaki Kato

    Inventor： Hisaki Kato

    IPC: G01J3/28

    CPC classification number: G01J3/36 ,  G01J3/02 ,  G01J3/0205 ,  G01J3/021 ,  G01J3/2803

    Abstract: The present invention relates to a spectroscopic analyzing apparatus having a structure for enabling detection of a continuous spectrum over an overall detecting region by sharing the overall detection wavelength range to a plurality of detectors. The spectroscopic analyzing apparatus has a spectroscope, a plurality of detectors, and direction changers provided in connection with one or more detectors among the plurality of detectors. The spectroscope separates incident light into one or more wavelength components. The respective detectors are arranged such that the optical path lengths from the spectroscope to the centers of the photodetecting faces thereof are made coincident with one another. The respective direction changers are arranged on the optical paths of the wavelength components that propagate from the spectroscope to the detectors, and changes the propagation directions of the wavelength components, whereby the direction changers function to adjust the optical path lengths of the wavelength components.

    Abstract translation: 本发明涉及一种光谱分析装置，其具有能够通过将整个检测波长范围共享到多个检测器来检测整个检测区域上的连续光谱的结构。 光谱分析装置具有与多个检测器中的一个或多个检测器相关联地设置的分光器，多个检测器和方向变换器。 分光镜将入射光分为一个或多个波长分量。 各检测器被布置成使得从分光器到其受光面的中心的光路长度彼此一致。 各方向变换器配置在从分光器传播到检测器的波长成分的光路上，并且改变波长成分的传播方向，由此方向变换器起到调整波长成分的光路长度的作用。

    Photodetector using photomultiplier and gain control method
    5.
    发明授权
    Photodetector using photomultiplier and gain control method 有权
    光电检测器采用光电倍增管和增益控制方式

    公开(公告)号：US07323674B2

    公开(公告)日：2008-01-29

    申请号：US11506204

    申请日：2006-08-18

    Applicant: Hisaki Kato ,  Hideki Shimoi ,  Kazuya Horiuchi ,  Toshiaki Ushizu

    Inventor： Hisaki Kato ,  Hideki Shimoi ,  Kazuya Horiuchi ,  Toshiaki Ushizu

    IPC: H01J40/14 ,  H01J43/00

    CPC classification number: H01J43/22 ,  H01J40/14 ,  H01J43/045

    Abstract: The present invention relates to a photodetector that has a structure capable of realizing a wide range gain adjustment for each of electron multiplier channels respectively assigned to a plurality of light incidence regions of a multi-anode multiplier. The photodetector comprises a multi-anode photomultiplier, and a bleeder circuit unit. The multi-anode multiplier has a dynode unit constituted by N (an integer or no less than 3) dynode plates, and n-th (an integer of no less then 2) dynode plate is constituted by a plurality of control plates respectively corresponding to the multiplier channels. The bleeder circuit unit has a primary section setting each potential of a first to (n−1)-th and (n+1)-th to N-th dynode plates, and a secondary section for individually setting a potential of each control plate at any potential within the range wider than a potential difference between the (n−1)-th and (n+1) dynode plates. By expanding the potential setting range for the control plates rather than the potential difference between the dynode plates adjacent to the n-th dynode plate, the gain of each electron multiplier channel can be controlled by two digits or more.

    Abstract translation: 本发明涉及一种具有能够实现对分别分配给多阳极倍增器的多个入射区域的每个电子倍增器通道的宽范围增益调整的结构的光电检测器。 光电检测器包括多阳极光电倍增管和泄放电路单元。 多阳极倍增器具有由N（整数或不小于3）倍增极板构成的倍增电极单元，并且第n（不小于2的整数）倍增极板由分别对应于 乘数通道。 泄放电路单元具有设定第一至第（n-1）和第（n + 1）至第N倍增电极板的每个电位的主要部分，以及用于单独设置每个控制板的电位的次级部分 在比第（n-1）和（n + 1）倍增极板之间的电位差宽的范围内的任何电位。 通过扩大控制板的电位设置范围，而不是与第n倍增极板相邻的倍增极板之间的电位差，每个电子倍增器通道的增益可以被控制在两位以上。

    Industrial robot
    8.
    发明授权
    Industrial robot 有权
    工业机器人

    公开(公告)号：US07922439B2

    公开(公告)日：2011-04-12

    申请号：US12314569

    申请日：2008-12-12

    Applicant: Hisaki Kato

    Inventor： Hisaki Kato

    IPC: B25J19/00

    CPC classification number: B25J19/0075 ,  Y10T74/20305

    Abstract: A robot comprises a fixed member that has a lower end, a movable member, and an elastic sheet member. The movable member is supported by the fixed member to be movable between an uppermost position and a lowermost position of a movable range given to the movable member in a vertical direction relative to the fixed member. This movable member has a lower end at which an operation tool is provided The elastic sheet member has both ends. Of these ends, one end is fixed to the lower end of the fixed member and the other end is fixed to the lower end of the movable member. This sheet member droops when the movable member moves up to the uppermost position of the fixed member.

    Abstract translation: 机器人包括具有下端的固定构件，可动构件和弹性片构件。 可动构件由固定构件支撑，以能够相对于固定构件沿垂直方向在可移动构件的可移动范围的最上位置和最下位置之间移动。 该可动构件具有设置有操作工具的下端。弹性片构件具有两端。 在这些端部中，一端固定在固定部件的下端，另一端固定在可动部件的下端。 当可动构件向上移动到固定构件的最上位置时，该片构件下垂。

    Spectroscopic device
    9.
    发明授权
    Spectroscopic device 有权
    光谱仪

    公开(公告)号：US07623243B2

    公开(公告)日：2009-11-24

    申请号：US10572369

    申请日：2004-09-13

    Applicant: Hisaki Kato

    Inventor： Hisaki Kato

    IPC: G01N21/25

    CPC classification number: G01J3/02 ,  G01J3/021 ,  G01J3/0256 ,  G01J3/36

    Abstract: A spectroscopic device that can suppress the occurrence of cross-talk when light beams of different wavelength ranges are optically received is provided. Detected light is made incident to a dichroic minor (hereinafter referred to as “mirror”) DM1 along the perpendicular direction of a photoelectric surface 7. Accordingly, light transmitted through the mirror DM1 is made incident substantially perpendicular to the photoelectric surface 7. On the other hand, light reflected from the mirror DM1 is reflected from a main mirror surface 23. At this time, the dichroic mirror array 21 is inclined so that the mirror DM8 side having the minimum shortest wavelength is nearer to the photoelectric surface 7 than the minor DM1 side having the maximum shortest wavelength and substantially parallel to the main minor surface 23a, so that light reflected from the main mirror surface 23a is made incident to the mirror DM2 along the perpendicular direction of the photoelectric surface 7. Accordingly, light transmitted through the mirror DM2 is made incident substantially perpendicular tote photoelectric surface 7. As described above, the light transmitted through each mirror DMn is substantially vertical made incident to the photoelectric surface 7, and thus the occurrence of cross-talk can be suppressed.

    Abstract translation: 提供了可以抑制在不同波长范围的光束被光学接收时串扰发生的分光装置。 检测光沿光电表面7的垂直方向入射到二向色小型（以下称为“镜子”）DM1。因此，透过反射镜DM1的光基本上垂直于光电表面7入射。在 从反射镜DM1反射的光从主镜面23反射。此时，分色镜阵列21倾斜，使得具有最小最短波长的反射镜DM8侧比次要的更靠近光电表面7 DM1侧具有最大最短波长并且基本上平行于主次表面23a，使得从主镜面23a反射的光沿光电表面7的垂直方向入射到反射镜DM2。因此，透过 镜DM2被制成基本上垂直于光电表面7入射。如上所述，透光 通过每个反射镜DMn基本垂直地入射到光电表面7，从而可以抑制串扰的发生。

    Method for manufacturing a gallium nitride group compound semiconductor
    10.
    发明授权
    Method for manufacturing a gallium nitride group compound semiconductor 失效
    氮化镓基化合物半导体的制造方法

    公开(公告)号：US06984536B2

    公开(公告)日：2006-01-10

    申请号：US10052347

    申请日：2002-01-23

    Applicant: Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    Inventor： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

    IPC: H01L21/20

    CPC classification number: H01L33/32 ,  H01L33/007 ,  H01L33/025

    Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

    Abstract translation: 本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层 低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

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