Abstract:
An electron-emitting device (20, 70, 80, or 90) contains an electrode, either a control electrode (38) or an emitter electrode (32), having a specified portion situated off to the side of the bulk of the electrode. For a control electrode, the specified portion is an exposure portion (38EA or 38EB) having openings that expose electron-emissive elements (50A or 50B) situated over an emitter electrode. For an emitter electrode, the specified portion is an emitter-coupling portion situated below at least one electron-emissive element exposed through at least one opening in a control electrode. Configuring the device in this way enables the control-electrode-to-emitter-electrode capacitance to be quite small, thereby enhancing the device's switching speed. If the specified portion of the electrode becomes short circuited to the other electrode, the short-circuit defect can be removed by severing the specified portion from the remainder of its electrode.
Abstract:
An electron-emitting device comprising, on a substrate, a pair of electrodes, an electroconductive film having a gap in part, connected to the pair of electrodes, a member comprising a principal component of carbon, provided in the gap portion while being connected to the electroconductive film, and a metallic oxide comprising at least one element selected from the group consisting of nickel, iron, and cobalt, between the member comprising the principal component of carbon and the substrate.
Abstract:
A field emission cathode for use in flat panel displays is described including a layer of conductive material and a layer of amorphic diamond film, functioning as a low effective work-function material, deposited over the conductive material to form emission sites. The emission sites each contain at least two sub-regions having differing electron affinities. Use of the cathode to form a computer screen is also described along with the use of the cathode to form a fluorescent light source.
Abstract:
A method of fabricating row lines and pixel openings of a field emission array. The method employs only two masks. A first mask employed in the method includes apertures alignable between rows of pixels of the field emission array. Electrically conductive material and semiconductive material exposed through the apertures are removed to define the row lines of the field emission array. A passivation layer is then disposed over at least selected portions of the field emission array. Then a second mask, including apertures alignable over the pixel regions of the field emission array, is disposed over the passivation layer of the field emission array. Passivation material exposed through the apertures of the second mask is removed to define openings through the passivation layer and over the pixel regions of the field emission array. Conductive material exposed through the apertures of the second mask may then be removed to expose the underlying semiconductive grid and to further define the pixel openings.
Abstract:
A self-powered cold temperature capable flat panel display is provided to use a heat byproduct from a group of PEM fuel cells to warm the flat panel display of a laptop computer. The self-powered cold temperature capable flat panel display system comprises a flat panel display, a PEM fuel cell assembly, a means for separating the display from the PEM fuel cell assembly and a hydrogen fuel source. A slot is located below the panel and the PEM fuel cell assembly is sufficiently thin to provide adequate space in the slot for the insertion of both the separation means and the PEM fuel cell assembly. Other embodiments include a cold temperature display system and an all-climate panel display and a method for warming a panel display.
Abstract:
A method of fabricating row lines and pixel openings of a field emission array. The method employs only two masks. A first mask employed in the method includes apertures alignable between rows of pixels of the field emission array. Electrically conductive material and semiconductive material exposed through the apertures are removed to define the row lines of the field emission array. A passivation layer is then disposed over at least selected portions of the field emission array. Then a second mask, including apertures alignable over the pixel regions of the field emission array, is disposed over the passivation layer of the field emission array. Passivation material exposed through the apertures of the second mask is removed to define openings through the passivation layer and over the pixel regions of the field emission array. Conductive material exposed through the apertures of the second mask may then be removed to expose the underlying semiconductive grid and to further define the pixel openings.
Abstract:
A cathode structure suitable for a flat-panel display contains an emitter layer (213) divided into emitter lines, a plurality of electron emitters (229, 239, or 230) situated over the emitter lines, and a gate layer (215A) having an upper surface spaced largely above the electron emitters. The gate layer has a plurality of gate holes (215B) each corresponding to one of the electron emitters. The cathode structure further includes a carbon-containing layer (340, 240, or 241) coated over the electron emitters and directly on at least part of the upper surface of the gate layer such that at least part of the carbon-containing layer extending along and above the gate layer is exposed.
Abstract:
A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF2, CaF2 or LiF, or a film of an oxide such as Al2O3, ZnO, CaO, SrO, SiO2 or La2O3 on a carbon nanotube (CNT), which functions to increase the secondary electron emission coefficient caused by electrons or ions.
Abstract translation:提供了使用碳纳米管和等离子体显示面板的二次电子放大结构和使用其的背光。 二次电子放大结构通过在碳纳米管上层叠MgO膜,氟化物如MgF 2,CaF 2或LiF的膜或氧化物如Al 2 O 3,ZnO,CaO,SrO,SiO 2或La 2 O 3的膜而形成, CNT),其用于增加由电子或离子引起的二次电子发射系数。
Abstract:
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
Abstract:
A source of a focused electron beam is provided for use in a cathode ray tube (CRT) or vacuum microelectronic device. A carbon-based field emission cathode, extraction gate and focus lens are formed as an integrated structure using fabrication techniques that are used to form integrated circuits. An external focus lens is used to confine the beamlets from a large number of carbon-based surfaces. A convergence cup accelerates the beam toward a drift space and finally to a screen on a CRT or other device. The source may be much more compact than present CRT electron optics apparatus.