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    Proppant
    421.
    发明申请
    Proppant 有权
    支架

    公开(公告)号：US20110297383A1

    公开(公告)日：2011-12-08

    申请号：US13126905

    申请日：2009-10-29

    Applicant: Christopher M. Tanguay ,  John Erickson ,  Victoria Manea ,  Jyh-Chiarng Huarng ,  Rajesh Kumar ,  Fikri Emrah Alemdaroglu

    Inventor： Christopher M. Tanguay ,  John Erickson ,  Victoria Manea ,  Jyh-Chiarng Huarng ,  Rajesh Kumar ,  Fikri Emrah Alemdaroglu

    IPC: E21B43/26 ,  B05D7/00 ,  C09K8/92

    CPC classification number: C09K8/805 ,  C09K8/62

    Abstract: A proppant comprises a particle and a polycarbodiimide coating disposed on the particle. The polycarbodiimide coating comprises the reaction product of a polymeric isocyanate and a monomeric isocyanate, in the presence of a catalyst. A method of forming the proppant comprises the steps of providing the particle, providing the polymeric isocyanate, providing the monomeric isocyanate, providing the catalyst, reacting the polymeric isocyanate and the monomeric isocyanate in the presence of the catalyst to form the polycarbodiimide coating, and coating the particle with the polycarbodiimide coating.

    Abstract translation: 支撑剂包括颗粒和设置在颗粒上的聚碳二亚胺涂层。 聚碳化二亚胺涂层包括聚合异氰酸酯和单体异氰酸酯在催化剂存在下的反应产物。 形成支撑剂的方法包括提供颗粒，提供聚合异氰酸酯，提供单体异氰酸酯，提供催化剂，在催化剂存在下使聚合异氰酸酯和单体异氰酸酯反应形成聚碳二亚胺涂层和涂层 具有聚碳化二亚胺涂层的颗粒。

    Method and apparatus for transferring a wound web
    423.
    发明授权
    Method and apparatus for transferring a wound web 有权
    用于传送卷材的方法和装置

    公开(公告)号：US08042760B2

    公开(公告)日：2011-10-25

    申请号：US12405539

    申请日：2009-03-17

    Applicant: Claudio Antonio Matos ,  Stephan Otto Hiltenkamp ,  Christopher van de Vrande ,  Rajesh Kumar Singh

    Inventor： Claudio Antonio Matos ,  Stephan Otto Hiltenkamp ,  Christopher van de Vrande ,  Rajesh Kumar Singh

    IPC: B65H19/22

    CPC classification number: B65H19/12 ,  B65H2301/418523 ,  B65H2301/41856 ,  B65H2301/4187

    Abstract: A method and apparatus for transferring a web wound about a loaded core. The steps include providing a core shaft axially extending between a core shaft first end and a core shaft second end, providing a web wound about a loaded core, the loaded core coaxially related to the core shaft, axially supporting the core shaft by a first axial support operatively engaged with the core shaft first end and a second axial support operatively engaged with the core shaft second end, axially moving the loaded core from the core shaft to the second axial support, and removing the first axial support and the second axial support.

    Abstract translation: 一种用于传送围绕加载的芯的卷绕卷绕的方法和装置。 所述步骤包括提供在芯轴第一端和芯轴第二端之间轴向延伸的芯轴，提供围绕加载的芯缠绕的腹板，所述加载的芯与芯轴同轴地相关联，轴向支撑芯轴通过第一轴向 与芯轴第一端可操作地接合的支撑件和与芯轴第二端可操作地接合的第二轴向支撑件，将加载的芯轴从芯轴轴向移动到第二轴向支撑件，以及移除第一轴向支撑件和第二轴向支撑件。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    425.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20110186861A1

    公开(公告)日：2011-08-04

    申请号：US13014037

    申请日：2011-01-26

    Applicant: Rajesh Kumar MALHAN ,  Masaaki KUZUHARA

    Inventor： Rajesh Kumar MALHAN ,  Masaaki KUZUHARA

    IPC: H01L29/12 ,  H01L29/812 ,  H01L21/338

    CPC classification number: H01L29/12 ,  H01L29/812

    Abstract: A semiconductor device having a JFET or a MESFET mainly includes a semiconductor substrate, a first conductivity type semiconductor channel layer on the substrate, a first conductivity type semiconductor layer on the channel layer, and an i-type sidewall layer on a sidewall of a recess that penetrates the semiconductor layer to divide the semiconductor layer into a source region and a drain region. The semiconductor layer has an impurity concentration greater than an impurity concentration of the channel layer. The semiconductor device further includes a second conductivity type gate region that is located on the channel layer in the recess and on the i-type sidewall layer. The gate region is spaced from the source region and the drain region by the i-type sidewall layer.

    Abstract translation: 具有JFET或MESFET的半导体器件主要包括半导体衬底，衬底上的第一导电类型半导体沟道层，沟道层上的第一导电类型半导体层以及凹槽侧壁上的i型侧壁层 其穿透半导体层以将半导体层分成源极区和漏极区。 半导体层的杂质浓度大于沟道层的杂质浓度。 半导体器件还包括位于凹槽中和i型侧壁层上的沟道层上的第二导电型栅极区域。 栅极区域通过i型侧壁层与源极区域和漏极区域间隔开。

    SEMICONDUCTOR DEVICE HAVING D MODE JFET AND E MODE JFET AND METHOD FOR MANUFACTURING THE SAME
    426.
    发明申请
    SEMICONDUCTOR DEVICE HAVING D MODE JFET AND E MODE JFET AND METHOD FOR MANUFACTURING THE SAME 有权
    具有D模式JFET和E模式JFET的半导体器件及其制造方法

    公开(公告)号：US20110156053A1

    公开(公告)日：2011-06-30

    申请号：US12974516

    申请日：2010-12-21

    Applicant: Rajesh Kumar Malhan ,  Naohiro Sugiyama

    Inventor： Rajesh Kumar Malhan ,  Naohiro Sugiyama

    IPC: H01L29/12 ,  H01L29/808 ,  H01L21/337

    CPC classification number: H01L29/808 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/1608 ,  H01L29/66068

    Abstract: A semiconductor device includes: a substrate; and depletion and enhancement mode JFETs. The depletion mode JFET includes: a concavity on the substrate; a channel layer in the concavity; a first gate region on the channel layer; first source and drain regions on respective sides of the first gate region in the channel layer; first gate, source and drain electrodes. The enhancement mode JFET includes: a convexity on the substrate; the channel layer on the convexity; a second gate region on the channel layer; second source and drain regions on respective sides of the second gate region in the channel layer; second gate, source and drain electrodes. A thickness of the channel layer in the concavity is larger than a thickness of the channel layer on the convexity.

    Abstract translation: 半导体器件包括：衬底; 以及耗尽和增强型JFET。 耗尽型JFET包括：衬底上的凹面; 凹陷中的沟道层; 沟道层上的第一栅极区; 在沟道层中的第一栅极区域的相应侧上的第一源极和漏极区域; 第一栅极，源极和漏极。 增强模式JFET包括：在衬底上的凸起; 沟道层上凸; 沟道层上的第二栅极区; 在沟道层中的第二栅极区的相应侧上的第二源极和漏极区; 第二栅极，源极和漏极。 凹槽中的沟道层的厚度大于沟槽层的厚度。

    Synthesis of aniline and phenol-based antioxidant macromonomers and corresponding polymers
    428.
    发明授权
    Synthesis of aniline and phenol-based antioxidant macromonomers and corresponding polymers 有权
    苯胺和酚类抗氧化剂大分子单体和相应聚合物的合成

    公开(公告)号：US07902317B2

    公开(公告)日：2011-03-08

    申请号：US11293844

    申请日：2005-12-02

    Applicant: Rajesh Kumar ,  Suizhou Yang ,  Ashok L. Cholli

    Inventor： Rajesh Kumar ,  Suizhou Yang ,  Ashok L. Cholli

    IPC: C08G63/00 ,  C08G61/02

    CPC classification number: C09K15/322 ,  C07C231/02 ,  C08G61/00 ,  C08G61/10 ,  C08G2261/1422 ,  C08G2261/1426 ,  C08G2261/1432 ,  C08K5/04 ,  C08K5/20 ,  C08K5/52 ,  C08K13/02 ,  C07C235/38

    Abstract: Compounds are synthesized that contain nitrogen and hindered phenol functionalities of an aromatic amine and hindered phenol for use as oxidative stabilizers for organic materials, paints, lubricants, elastomers, and in other applications. The disclosed methods can efficiently synthesize target monomers and polymers without the use of expensive catalysts. Further, the disclosed methods can scale up to industrially useful quantities. In general, the methods provide an improved, highly efficient and economical process for the synthesis of macromonomers having nitrogen containing moiety and sterically hindered phenols and their corresponding polymers.

    Abstract translation: 合成含有芳族胺和受阻酚的氮和受阻酚官能团的化合物，用作有机材料，油漆，润滑剂，弹性体和其它应用的氧化稳定剂。 所公开的方法可以有效地合成目标单体和聚合物而不使用昂贵的催化剂。 此外，所公开的方法可以扩展到工业上有用的量。 通常，这些方法为具有含氮部分和空间位阻酚及其相应聚合物的大分子单体的合成提供了改进的，高效和经济的方法。

    Facilitating a user of a client system to continue with submission of additional requests when an application framework processes prior requests
    429.
    发明授权
    Facilitating a user of a client system to continue with submission of additional requests when an application framework processes prior requests 有权
    在应用程序框架处理事先请求时，促进客户端系统的用户继续提交附加请求

    公开(公告)号：US07885994B2

    公开(公告)日：2011-02-08

    申请号：US12035451

    申请日：2008-02-22

    Applicant: Veerubhotla V Lavanya ,  Subramanian C Venkataraman ,  Rajesh Kumar Choudhary ,  Dharanidhar Lanka

    Inventor： Veerubhotla V Lavanya ,  Subramanian C Venkataraman ,  Rajesh Kumar Choudhary ,  Dharanidhar Lanka

    IPC: G06F15/16

    CPC classification number: G06F9/5083

    Abstract: A computing system in which a user of a client system can continue with submission of an additional request while an application framework processes prior requests. In an embodiment, when a request is received, the resource requirements for processing the request are determined. If the resource requirements exceed a threshold, the request may be processed in the background. The user can continue issuing additional requests. After completion of processing of a request, the availability of the results may be notified in a pre-specified portion of a window from which the user is interacting with the application framework. The user may conveniently request the results by clicking on a portion of the displayed message.

    Abstract translation: 一种计算系统，其中客户机系统的用户可以在应用框架处理事先请求时继续提交附加请求。 在一个实施例中，当接收到请求时，确定用于处理请求的资源需求。 如果资源要求超过阈值，则可以在后台处理请求。 用户可以继续发出其他请求。 在完成对请求的处理之后，结果的可用性可以在用户与应用框架进行交互的窗口的预先指定的部分中被通知。 用户可以通过点击显示的消息的一部分来方便地请求结果。

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