METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM
    461.
    发明申请

    公开(公告)号:US20200301290A1

    公开(公告)日:2020-09-24

    申请号:US16893619

    申请日:2020-06-05

    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

    Automatic selection of metrology target measurement recipes

    公开(公告)号:US10782616B2

    公开(公告)日:2020-09-22

    申请号:US16325767

    申请日:2017-08-07

    Abstract: A method including performing a first simulation for each of a plurality of different metrology target measurement recipes using a first model, selecting a first group of metrology target measurement recipes from the plurality of metrology target measurement recipes, the first group of metrology target measurement recipes satisfying a first rule, performing a second simulation for each of the metrology target measurement recipes from the first group using a second model, and selecting a second group of metrology target measurement recipes from the first group, the second group of metrology target measurement recipes satisfying a second rule, the first model being less accurate or faster than the second model and/or the first rule being less restrictive than the second rule.

    Method of measuring a structure, inspection apparatus, lithographic system, device manufacturing method and wavelength-selective filter for use therein

    公开(公告)号:US10775704B2

    公开(公告)日:2020-09-15

    申请号:US16524323

    申请日:2019-07-29

    Abstract: A scatterometer performs diffraction based measurements of one or more parameters of a target structure. To make two-color measurements in parallel, the structure is illuminated simultaneously with first radiation (302) having a first wavelength and a first angular distribution and with second radiation (304) having a second wavelength and a second angular distribution. The collection path (CP) includes a segmented wavelength-selective filter (21, 310) arranged to transmit wanted higher order portions of the diffracted first radiation (302X, 302Y) and of the diffracted second radiation (304X, 304Y), while simultaneously blocking zero order portions (302″, 304″) of both the first radiation and second radiation. The illumination path (IP) in one embodiment includes a matching segmented wavelength-selective filter (13, 300), oriented such that a zero order ray passing through the illumination optical system and the collection optical system will be blocked by one of said filters or the other, depending on its wavelength.

    OPTICAL HEIGHT DETECTION SYSTEM
    465.
    发明申请

    公开(公告)号:US20200279715A1

    公开(公告)日:2020-09-03

    申请号:US16650840

    申请日:2018-09-21

    Abstract: An optical height detection system in a charged particle beam inspection system. The optical height detection system includes a projection unit including a modulated illumination source, a projection grating mask including a projection grating pattern, and a projection optical unit for projecting the projection grating pattern to a sample; and a detection unit including a first detection grating mask including a first detection grating pattern, a second detection grating mask including a second detection grating pattern, and a detection optical system for forming a first grating image from the projection grating pattern onto the first detection grating mask and forming a second grating image from the projection grating pattern onto the second detection grating masks. The first and second detection grating patterns at least partially overlap the first and second grating images, respectively.

    METHODS OF INSPECTING SAMPLES WITH MULTIPLE BEAMS OF CHARGED PARTICLES

    公开(公告)号:US20200271598A1

    公开(公告)日:2020-08-27

    申请号:US16812109

    申请日:2020-03-06

    Abstract: Disclosed herein is an apparatus comprising: a source configured to emit charged particles, an optical system and a stage; wherein the stage is configured to support a sample thereon and configured to move the sample by a first distance in a first direction; wherein the optical system is configured to form probe spots on the sample with the charged particles; wherein the optical system is configured to move the probe spots by the first distance in the first direction and by a second distance in a second direction, simultaneously, while the stage moves the sample by the first distance in the first direction; wherein the optical system is configured to move the probe spots by the first distance less a width of one of the probe spots in an opposite direction of the first direction, after the stage moves the sample by the first distance in the first direction.

    Process window identifier
    467.
    发明授权

    公开(公告)号:US10755025B2

    公开(公告)日:2020-08-25

    申请号:US15821051

    申请日:2017-11-22

    Abstract: Disclosed herein is a computer-implemented method for determining an overlapping process window (OPW) of an area of interest on a portion of a design layout for a device manufacturing process for imaging the portion onto a substrate, the method including: obtaining a plurality of features in the area of interest; obtaining a plurality of values of one or more processing parameters of the device manufacturing process; determining existence of defects, probability of the existence of defects, or both in imaging the plurality of features by the device manufacturing process under each of the plurality of values; and determining the OPW of the area of interest from the existence of defects, the probability of the existence of defects, or both.

    METHODS AND APPARATUSES FOR ADJUSTING BEAM CONDITION OF CHARGED PARTICLES

    公开(公告)号:US20200234912A1

    公开(公告)日:2020-07-23

    申请号:US16651344

    申请日:2018-09-25

    Inventor: Xuedong LIU

    Abstract: Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

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