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    REAMER
    41.
    发明申请
    REAMER 有权

    公开(公告)号：US20210245276A1

    公开(公告)日：2021-08-12

    申请号：US16973716

    申请日：2019-04-03

    Applicant: A.L.M.T. Corp.

    Inventor： Sakuya TANAKA ,  Koji SAWA

    IPC: B23D77/00

    Abstract: A reamer incudes a core and a plurality of outer-circumference cutting edges provided on an outer circumference of the core and made of a hard tool material. The core extends from a front end to a rear end. The core is provided with a plurality of flutes from the front end to the rear end. A center-of-gravity adjustment portion, which adjusts a distance from a center of rotation to a center of gravity, is provided at least partially from terminal ends of the plurality of flutes on a rear end side to the rear end of the core. The center-of-gravity adjustment portion causes the deviation of the center of gravity from the center of rotation to be smaller than when no center-of-gravity adjustment portion is provided.

    Tungsten electrode material
    42.
    发明授权
    Tungsten electrode material 有权

    公开(公告)号：US10777403B2

    公开(公告)日：2020-09-15

    申请号：US16499157

    申请日：2018-03-23

    Applicant: A.L.M.T. Corp.

    Inventor： Seiji Nakabayashi ,  Tomohiro Takida

    IPC: H01J61/073 ,  C22C27/04

    Abstract: A tungsten electrode material contains a tungsten-based material and oxide particles dispersed in the tungsten-based material. The oxide particles are composed of an oxide solid solution in which a Zr oxide and/or an Hf oxide and an oxide of at least one rare earth selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu are dissolved as a solid solution. A content of the rare-earth oxide with respect to a total amount of the Zr oxide and/or the Hf oxide and the rare-earth oxide is not lower than 66 mol % and not higher than 97 mol %, a content of the oxide solid solution is not lower than 0.5 mass % and not higher than 9 mass %, and the remainder is composed substantially of tungsten.

    COMPLEX CARBONITRIDE POWDER AND METHOD FOR PRODUCING SAME
    44.
    发明申请
    COMPLEX CARBONITRIDE POWDER AND METHOD FOR PRODUCING SAME 审中-公开

    公开(公告)号：US20190092638A1

    公开(公告)日：2019-03-28

    申请号：US15772582

    申请日：2016-10-21

    Applicant: Sumitomo Electric Industries, Ltd. ,  A.L.M.T. Corp.

    Inventor： Masato Michiuchi ,  Keiichi Tsuda ,  Yoshihiro Minato ,  Tomoyuki Ishida ,  Akihide Matsumoto ,  Takehiko Hayashi

    IPC: C01B21/082 ,  C22C29/04 ,  C22C1/05

    Abstract: A complex carbonitride powder contains Ti as a main component element and at least one additional element selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Al, and Si. The complex carbonitride powder includes a plurality of complex carbonitride particles containing Ti and the additional element. The plurality of complex carbonitride particles include a plurality of homogeneous composition particles where average concentrations of Ti and the additional element in each complex carbonitride particle have a difference in a range of greater than or equal to −5 atom % and less than or equal to 5 atom % from average concentrations of Ti and the additional element in the whole complex carbonitride powder. A cross-sectional area of the homogeneous composition particles is greater than or equal to 90% of a cross-sectional area of the complex carbonitride particles 1p.

    Heat spreader and method for manufacturing the same
    45.
    发明授权
    Heat spreader and method for manufacturing the same 有权

    公开(公告)号：US10215512B2

    公开(公告)日：2019-02-26

    申请号：US15312931

    申请日：2015-05-13

    Applicant: A.L.M.T. Corp.

    Inventor： Hiroaki Oki ,  Tadashi Arikawa ,  Shouichi Inaba

    IPC: B32B15/20 ,  F28F21/08 ,  B32B15/01 ,  H01L23/373 ,  B32B3/26 ,  B32B37/10 ,  F28F13/00 ,  B22F3/10 ,  B22F7/06 ,  C22C9/00 ,  C22C27/04

    Abstract: [Problem] To provide a heat spreader capable of removing heat from an element more efficiently and immediately than an existing one, and also capable of satisfactorily responding to further enhancement in performance and output of various apparatuses, and a method for efficiently manufacturing the same. [Solution] A heat spreader includes a Cu—Mo layer made of a Cu—Mo composite material and having an average thickness of less than or equal to 0.6 mm and a variation in thickness of less than or equal to 0.1 mm, and a Cu layer directly stacked on each of both surfaces thereof. A method for manufacturing the heat spreader includes planarizing a plate material of the Cu—Mo composite material constituting the Cu—Mo layer, and roll-bonding a Cu plate constituting the Cu layer to each of both surfaces thereof.

    CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL, AND METHOD FOR PRODUCING CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL
    48.
    发明申请
    CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL, AND METHOD FOR PRODUCING CRUCIBLE FOR GROWING SAPPHIRE SINGLE CRYSTAL 有权
    用于生长SAPPHIRE单晶的可行性，以及用于生产用于生长SAPPHIRE单晶的可溶性的方法

    公开(公告)号：US20150225870A1

    公开(公告)日：2015-08-13

    申请号：US14430591

    申请日：2013-09-12

    Applicant: A.L.M.T. Corp

    Inventor： Masahiro Katoh ,  Makoto Watanabe

    IPC: C30B11/00 ,  C23C4/18 ,  C23C4/08 ,  C23C4/12 ,  C30B29/20 ,  C23C4/02

    CPC classification number: C30B11/002 ,  C23C4/02 ,  C23C4/08 ,  C23C4/12 ,  C23C4/18 ,  C30B29/20 ,  C30B35/002 ,  F27D2005/0075 ,  Y10T117/1092

    Abstract: An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.

    Abstract translation: 本发明的目的是提供一种用于生长蓝宝石单晶的坩埚，该坩埚被优化用于提供蓝宝石单晶并且是可再利用的。 用于生长本发明的蓝宝石单晶的坩埚包括：以钼为主要成分并具有坩埚形状的基材（3）; 以及涂层（5），其中仅涂覆基材（3）的内周并且由钨和不可避免的杂质形成，其中涂层（5）的表面粗糙度Ra为5μm以上 和20μm以下。

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