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公开(公告)号：US20210003928A1
公开(公告)日：2021-01-07
申请号：US17028287
申请日：2020-09-22
Applicant: ASML Netherlands B,V,
Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.
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公开(公告)号：US20190219927A1
公开(公告)日：2019-07-18
申请号：US16331710
申请日：2017-09-04
Applicant: ASML Netherlands B. V. , ASML Holding N.V.
Inventor： Suzanne Johanna Antonetta Geertruda COSIJNS , Maarten VAN DER HEIJDEN , Frederikus Johannes Maria DE VREEDE , David TAUB , Eric EMERY , Joseph Ashwin FRANKLIN
CPC classification number: G03F7/7095 , G03F7/70825 , G03F7/7085 , G03F9/7096
Abstract: An alignment system configured to be substantially insensitive to thermal variations in its system during alignment measurements. The alignment system includes a sensor system, a support structure, a sensing element, a position measurement system, and an athermal interface between the sensing element and the support structure. The sensor system is configured to determine a in position of an alignment mark on a substrate and the support structure is configured to support the sensor system. The sensing element is configured to detect an unintentional displacement of the support structure and the position measurement system is configured to measure the unintentional displacement relative to a reference element based on the detected unintentional displacement. The athermal interface is configured to prevent detection of temperature induced displacement of the support structure by the sensing element.
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公开(公告)号：US20180210348A1
公开(公告)日：2018-07-26
申请号：US15935670
申请日：2018-03-26
Applicant: ASML NETHERLANDS B. V.
Inventor： Takeshi KANEKO , Kornelis Tijmen Hoekerd
IPC: G03F7/20
CPC classification number: G03F7/70341 , G03F7/70925 , G03F7/7095 , G03F7/70975
Abstract: An apparatus and method for cleaning a contaminated surface of a lithographic apparatus are provided. A liquid confinement structure comprises at least two openings used to supply and extract liquid to a gap below the structure. The direction of flow between the openings can be switched. Liquid may be supplied to the gap radially outward of an opening adapted for dual flow. Supply and extraction lines to respectively supply liquid to and extract liquid from the liquid confinement structure have an inner surface that is resistant to corrosion by an organic liquid. A corrosive cleaning fluid can be used to clean photo resist contamination.
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公开(公告)号：US08874423B2
公开(公告)日：2014-10-28
申请号：US14064917
申请日：2013-10-28
Applicant: ASML Netherlands B. V.
Inventor： Yu Cao , Wenjin Shao , Ronaldus Johannes Gijsbertus Goossens , Jun Ye , James Patrick Koonmen
CPC classification number: B29C67/0088 , B29C64/386 , G03F7/70091 , G03F7/70458 , G03F7/705 , G03F7/70516 , G03F7/70525 , G06F17/50 , G06F17/5009 , G06F17/5081
Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.
Abstract translation: 描述用于调整光刻工艺的系统和方法。 保持目标扫描仪的型号，参考一组可调谐参数来定义目标扫描仪的灵敏度。 差分模型表示目标扫描器与参考值的偏差。 可以基于参考扫描仪和差分模型的设置来调整目标扫描仪。 可以相对于参考扫描仪的性能来表征相关扫描仪系列的性能。 差分模型可能包括诸如参数偏移和可能用于模拟成像行为差异的其他差异的信息。
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公开(公告)号：US20040160588A1
公开(公告)日：2004-08-19
申请号：US10684826
申请日：2003-10-15
Applicant: ASML Netherlands B. V.
Inventor： Heine Melle Mulder , Marco H. P. Moers
IPC: G03B027/54
CPC classification number: G03F7/70941
Abstract: A system and method for determining the stray radiation condition of a projection system, is presented herein. The invention comprises providing a detector with a detector aperture coincident with the image plane of the projection system, and measuring of a reference parameter in accordance with the projection beam intensity. The invention also comprises measuring a stray radiation parameter of an image of an isolated feature, formed by the projection system, and calculating a coefficient representative of the stray radiation condition of the projection system based on the measured stray radiation parameter and the reference parameter. The extent of the detector aperture fits within the extent of a notional shape, which is defined by first scaling down the shape of the feature by the magnification factor of the projection system, and by subsequently displacing each line element constituting the edge of the scaled down shape, parallel to itself, over a distance of at least null/NA in a direction perpendicular to that line element. The invention further comprises positioning the detector aperture within the image of the isolated feature.
Abstract translation: 本文提出了一种用于确定投影系统的杂散辐射条件的系统和方法。 本发明包括提供具有与投影系统的图像平面重合的检测器孔的检测器，以及根据投影束强度测量参考参数。 本发明还包括测量由投影系统形成的孤立特征的图像的杂散辐射参数，并且基于测量的杂散辐射参数和参考参数来计算代表投影系统的杂散辐射条件的系数。 检测器孔的范围适合于通过首先按照投影系统的放大系数缩小特征的形状，并且随后将构成缩小的边缘的每个线元素移位的概念形状的范围 形状，平行于其自身，在垂直于该线元件的方向上至少为λ/ NA的距离。 本发明还包括将检测器孔定位在隔离特征的图像内。
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Patent Agency Ranking
公开(公告)号：US20230297757A1
公开(公告)日：2023-09-21
申请号：US18018261
申请日：2021-08-26
Applicant: ASML NETHERLANDS B. V.
Inventor： Syam PARAYIL VENUGOPALAN , Mohammad Reza KAMALI , MIchael KUBIS
IPC: G06F30/398 , H01J37/32
CPC classification number: G06F30/398 , H01J37/32926 , H01J2237/334
Abstract: Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.
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公开(公告)号：US11569628B2
公开(公告)日：2023-01-31
申请号：US17268778
申请日：2019-08-05
Applicant: ASML Netherlands B. V.
Abstract: An apparatus (10) for increasing a pulse length of a pulsed radiation beam, the apparatus comprising: a beam splitter (16) configured to split an input radiation beam (18) into a first beam (24) and a second beam (22); an optical arrangement (12, 14), wherein the beam splitter and the optical arrangement are configured such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement; and at least one optical element (30) in an optical path of the first beam, the at least one optical element configured such that the phase of different parts of a wavefront of the first beam is varied to reduce coherence between the first beam and the second beam.
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公开(公告)号：US20200241433A1
公开(公告)日：2020-07-30
申请号：US16639566
申请日：2018-07-02
Applicant: ASML Netherlands B,V.
IPC: G03F9/00
Abstract: An apparatus for determining a characteristic of a feature of an object comprises: a measurement radiation source; a measurement radiation delivery system; a measurement system; a pump radiation source; and a pump radiation delivery system. The measurement radiation source is operable to produce measurement radiation and the measurement radiation delivery system is operable to irradiate at least a part of a top surface of the object with the measurement radiation. The measurement system is operable to receive at least a portion of the measurement radiation scattered from the top surface and is further operable to determine a characteristic of the feature of the object from at least a portion of the measurement radiation scattered from the top surface. The pump radiation source is operable to produce pump radiation and the pump radiation delivery system is operable to irradiate at least a part of the top surface of the object with the pump radiation so as to produce a mechanical response (for example an acoustic wave) in the object.
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公开(公告)号：US20200233310A1
公开(公告)日：2020-07-23
申请号：US16838139
申请日：2020-04-02
Applicant: ASML NETHERLANDS B. V.
Inventor： Léon Maria Albertus VAN DER LOGT , Bart Peter Bert SEGERS , Simon Hendrik Celine VAN GORP , Carlos Cornelis Maria LUIJTEN , Frank STAALS
IPC: G03F7/20
Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
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公开(公告)号：US20200225591A1
公开(公告)日：2020-07-16
申请号：US16633419
申请日：2018-07-18
Applicant: ASML Netherlands B,V. , ASML Holding N.V.
Inventor： Han-Kwang NIENHUYS , Ronald Peter ALBRIGHT , Jacob BRINKERT , Yang-Shan HUANG , Hendrikus Gijsbertus SCHIMMEL , Antonie Hendrik VERWEIJ
Abstract: Designs are provided to reduce the possibility of contaminant particles with a large range of sizes, materials, travel speeds and angles of incidence reaching a particle-sensitive environment. According to an aspect of the disclosure, there is provided an object stage comprising first and second chambers, a first structure having a first surface, and a second structure. The second structure is configured to support an object in the second chamber, movable relative to the first structure. The second structure comprises a second surface opposing the first surface of the first structure thereby defining a gap between the first structure and the second structure that extends between the first chamber and the second chamber. The second structure further comprises a third surface within the first chamber. The object stage further comprises a trap disposed on at least a portion of the third surface, the trap comprising a plurality of baffles.
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