公开(公告)号：US07902711B2

公开(公告)日：2011-03-08

申请号：US12330958

申请日：2008-12-09

Applicant: Rolf Blissenbach ,  Khiet Le ,  Dang Dinh Dang ,  Jonathan Bird

Inventor： Rolf Blissenbach ,  Khiet Le ,  Dang Dinh Dang ,  Jonathan Bird

IPC: H02K1/27

CPC classification number: H02K1/2766 ,  H02K1/246 ,  Y02T10/641 ,  Y10T29/49012

Abstract: An internal permanent magnet machine (“IPM machine”) of the type used, for example, with traction motors and hybrid electric vehicles, includes a rotor having a plurality of equal-sized (e.g., rectilinear) segmented ferrite magnets arranged in one or more layers. The magnets are inserted within rotor slots that are larger than the magnets themselves, such that one or more air gaps are formed adjacent to the magnets in each layer.

Abstract translation: 用于例如牵引电动机和混合动力电动车辆的内部永磁体机（“IPM机”）包括具有多个相等尺寸（例如，直线））分段的铁氧体磁体的转子，其布置在一个或多个 层。 这些磁体插入在比磁体本身大的转子槽内，使得在每个层中邻近磁体形成一个或多个气隙。

公开(公告)号：US07893479B2

公开(公告)日：2011-02-22

申请号：US12538193

申请日：2009-08-10

Applicant: June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

Inventor： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

IPC: H01L29/108

CPC classification number: H01L21/31116 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/66181 ,  Y10S438/952

Abstract: A semiconductor structure. A hard mask layer is on a top substrate surface of a semiconductor substrate. The hard mask layer includes a hard mask layer opening through which a portion of the top substrate surface is exposed to a surrounding ambient. The hard mask layer includes a pad oxide layer on the top substrate surface, a nitride layer on the pad oxide layer, a BSG (borosilicate glass) layer on top of the nitride layer, and an ARC (anti-reflective coating) layer on top of the BSG layer. A BSG side wall surface of the BSG layer is exposed to the surrounding ambient through the hard mask layer opening.

Abstract translation: 半导体结构。 硬掩模层位于半导体衬底的顶部衬底表面上。 硬掩模层包括硬掩模层开口，顶部衬底表面的一部分暴露于周围的环境中。 硬掩模层包括在顶部衬底表面上的衬垫氧化物层，衬垫氧化物层上的氮化物层，在氮化物层的顶部上的BSG（硼硅酸盐玻璃）层，以及顶部上的ARC（抗反射涂层） 的BSG层。 BSG层的BSG侧壁表面通过硬掩模层开口暴露于周围环境。

公开(公告)号：US20110012471A1

公开(公告)日：2011-01-20

申请号：US12503623

申请日：2009-07-15

Applicant: DANG DINH DANG ,  ROLF BLISSENBACH ,  DAVID SCHAUER ,  JOHN WATTLEWORTH ,  MICHAEL MILANI ,  ERIK HATCH

Inventor： DANG DINH DANG ,  ROLF BLISSENBACH ,  DAVID SCHAUER ,  JOHN WATTLEWORTH ,  MICHAEL MILANI ,  ERIK HATCH

IPC: H02K3/12 ,  H02K15/085

CPC classification number: H02K3/12 ,  B60L2200/00 ,  H02K15/0421 ,  Y02T10/641 ,  Y10T29/49009

Abstract: A stator includes a stator core, a plurality of slots, and a conductor. The plurality of slots are formed within the stator core. The conductor is disposed continuously within at least two of the plurality of openings.

Abstract translation: 定子包括定子芯，多个槽和导体。 多个槽形成在定子铁心内。 导体连续设置在多个开口中的至少两个开口内。

公开(公告)号：US20110012467A1

公开(公告)日：2011-01-20

申请号：US12503692

申请日：2009-07-15

Applicant: ROLF BLISSENBACH ,  DANG DINH DANG ,  ERIK HATCH ,  MICHAEL MILANI

Inventor： ROLF BLISSENBACH ,  DANG DINH DANG ,  ERIK HATCH ,  MICHAEL MILANI

IPC: H02K3/28 ,  H02K15/06

CPC classification number: H02K3/28 ,  H02K29/03 ,  Y10T29/49009

Abstract: A stator assembly for use with an electric motor includes, but is not limited to, a stator core having an inner surface and a plurality of open slots defined in the inner surface. The stator assembly also includes a winding having multiple conductors. The winding is coupled to the stator core such that a predetermined quantity of conductors is disposed within each open slot. The winding is configured to control a magnitude of a torque ripple produced by operation of the electric motor.

Abstract translation: 与电动机一起使用的定子组件包括但不限于具有限定在内表面中的内表面和多个开口槽的定子芯。 定子组件还包括具有多个导体的绕组。 绕组被连接到定子芯上，使得预定数量的导体设置在每个开放槽内。 绕组被配置为控制由电动机的操作产生的转矩波动的大小。

公开(公告)号：US07675121B2

公开(公告)日：2010-03-09

申请号：US11868564

申请日：2007-10-08

Applicant: Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

Inventor： Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

IPC: H01L29/78

CPC classification number: H01L27/1203 ,  H01L21/28518 ,  H01L21/743 ,  H01L21/84

Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.

Abstract translation: 低电阻接触结构及其制造方法。 该结构包括通过上硅层和掩埋氧化物层到硅绝缘衬底的下硅层的多晶硅接触。 上硅层的区域围绕多晶硅接触并且多晶硅接触的顶表面和上硅层的周围区域是金属硅化物，提供大于多晶硅接触顶表面的扩展接触面积。

公开(公告)号：US20070042387A1

公开(公告)日：2007-02-22

申请号：US11172703

申请日：2005-06-30

Applicant: Roger Pennell ,  Kenneth Feldmann ,  Yu-Ping Lu ,  Yiwen Fang ,  Shing Kwok ,  Van-Dinh Dang ,  Zhihong Cook ,  Jack Okamuro ,  Nestor Apuya ,  Richard Schneeberger ,  Emilio Margolles-Clark ,  Edward Kiegle ,  Leonard Medrano

Inventor： Roger Pennell ,  Kenneth Feldmann ,  Yu-Ping Lu ,  Yiwen Fang ,  Shing Kwok ,  Van-Dinh Dang ,  Zhihong Cook ,  Jack Okamuro ,  Nestor Apuya ,  Richard Schneeberger ,  Emilio Margolles-Clark ,  Edward Kiegle ,  Leonard Medrano

IPC: C12Q1/68 ,  C07H21/04 ,  C12P21/06

CPC classification number: C12N15/8216 ,  C12N15/8225 ,  C12N15/8226 ,  C12N15/8227 ,  C12N15/8229 ,  C12N15/823 ,  C12N15/8233 ,  C12N15/8234 ,  C12N15/8237

Abstract: The present invention is directed to promoter sequences and promoter control elements, polynucleotide constructs comprising the promoters and control elements, and methods of identifying the promoters, control elements, or fragments thereof. The invention further relates to the use of the present promoters or promoter control elements to modulate transcript levels.