公开(公告)号：US20060044429A1

公开(公告)日：2006-03-02

申请号：US11211821

申请日：2005-08-25

申请人： Atsushi Toda ,  Hirofumi Sumi

发明人： Atsushi Toda ,  Hirofumi Sumi

IPC分类号： H04N9/04

CPC分类号： G01J3/2823 ,  G01J3/04 ,  G01J3/1804 ,  G01J3/2803 ,  G01J3/502 ,  G01J3/51 ,  G01J3/513 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14831 ,  H04N5/2254 ,  H04N9/045 ,  H04N9/07

摘要： To enable an imaging apparatus to achieve high resolution and sufficient color reproducibility. A diffraction grating 1 is provided on the incident light side of a spectral image sensor 10, the diffraction grating 1 including scatterers such as scatterers 3, slits 5, and scatterers 7 which are disposed in that order. An electromagnetic wave is scattered by the scatterers to produce diffracted waves, and by using the fact that interference patterns between the diffracted waves change with wavelengths, signals are detected for respective wavelengths by photoelectric conversion elements 12B, 12G, and 12R in each photodiode group 12.

摘要翻译： 使成像装置能够实现高分辨率和足够的色彩再现性。 衍射光栅1设置在光谱图像传感器10的入射光侧，衍射光栅1包括依次布置的散射体3，狭缝5和散射体7等散射体。 电磁波被散射体散射以产生衍射波，并且通过使用衍射波之间的干涉图案随波长变化的事实，通过每个波长中的光电转换元件12B，12G和12R检测各波长的信号 光电二极管组12。

公开(公告)号：US06423993B1

公开(公告)日：2002-07-23

申请号：US09499449

申请日：2000-02-07

申请人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

发明人： Ryoji Suzuki ,  Takahisa Ueno ,  Hirofumi Sumi ,  Keiji Mabuchi

IPC分类号： H01L31062

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts.

摘要翻译： 固态图像感测装置具有通过器件隔离层对应于像素的pn结传感器部分。 固体摄像装置包括形成在第一导电型第一半导体阱区域和器件隔离层之间的第一导电型第二半导体阱区域。 当设备运行时，每个传感器部分的耗尽层扩散到位于每个传感器部件下方的第一半导体阱区域。

公开(公告)号：US5763948A

公开(公告)日：1998-06-09

申请号：US531787

申请日：1995-09-21

申请人： Hirofumi Sumi

发明人： Hirofumi Sumi

IPC分类号： H01L21/28 ,  H01L21/203 ,  H01L21/3205 ,  H01L23/485 ,  H01L23/52 ,  H01L23/532 ,  H01L23/48 ,  H01L29/12 ,  H01L29/40

CPC分类号： H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

摘要： A semiconductor apparatus having at least a compound film containing nitrogen and a method for production of the same, wherein the compound film containing nitrogen is formed under conditions where the ratio of the flow rates of the nitrogen with respect to an inert gas is 0.125 to 1.0.

摘要翻译： 具有至少含氮化合物膜的半导体装置及其制造方法，其中，在氮气相对于惰性气体的流量比为0.125〜1.0的条件下，形成含氮化合物膜 。

公开(公告)号：US5686355A

公开(公告)日：1997-11-11

申请号：US546715

申请日：1995-10-23

申请人： Hirofumi Sumi ,  Chigusa Yamane

发明人： Hirofumi Sumi ,  Chigusa Yamane

IPC分类号： C23C16/46 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76876 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S438/974

摘要： A method for forming a film of refractory metal used for interconnection in a semiconductor integrated circuit and, above all, to a method for forming a tungsten film (Blk-W film) by a blanket CVD method. A blanket tungsten (Blk-W) film 10 is formed with good adherence and coverage on an SiO.sub.X based interlayer insulating film 3 having a minute-sized contact hole 4 for improving reliability in an interconnection. Before proceeding to Blk-W-CVD, a substrate having a Ti-based adherent layer 7 on its uppermost surface is heated and exposed to a silane-based gas atmosphere for forming Si-nuclei on its surface. A W-nucleus 9 is formed by reducing the WF.sub.6 gas with H.sub.2 and a Blk-W film 10 is also formed by reducing the WF.sub.6 with SiH.sub.4 under a rate determined by the rate of the surface reaction. If the substrate is preliminarily heated before forming the Si nuclei, formation of the Si nuclei proceeds with improved uniformity. The W-nuclei may be carried out uniformly in a temperature range of 450.degree. C. or higher. If the substrate heating temperature during high speed growth is lowered to a temperature lower than that during W-nucleus formation, the thermal stress in the substrate may be released for further improving adherence between the Blk-W film 10 and the substrate.

摘要翻译： 在半导体集成电路中形成用于互连的难熔金属膜的方法，特别是通过毯式CVD法形成钨膜（Blk-W膜）的方法。 在具有微小接触孔4的SiOX基层间绝缘膜3上形成具有良好粘附性和覆盖性的覆盖钨（Blk-W）膜10，以提高互连中的可靠性。 在进行Blk-W-CVD之前，在其最上表面上具有Ti基粘合层7的基板被加热并暴露于其表面上形成Si-核的硅烷基气体气氛。 通过用H 2还原WF 6气体形成W核9，并且通过用表面反应速率确定的速率通过用SiH 4还原WF 6也形成Blk-W膜10。 如果在形成Si核之前衬底被预先加热，则Si核的形成将进行改善的均匀性。 W核可以在450℃以上的温度范围内均匀地进行。 如果在高速生长期间的基板加热温度降低到低于W形核形成期间的温度，则可以释放基板中的热应力，以进一步提高Blk-W膜10和基板之间的粘附性。

公开(公告)号：US5597739A

公开(公告)日：1997-01-28

申请号：US636848

申请日：1996-04-23

申请人： Hirofumi Sumi ,  Naoki Nagashima

发明人： Hirofumi Sumi ,  Naoki Nagashima

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/78 ,  H01L29/786 ,  H01L21/265 ,  H01L21/20 ,  H01L21/302 ,  H01L21/44

CPC分类号： H01L29/78696 ,  H01L29/458 ,  H01L29/66772 ,  H01L29/78654

摘要： Transistor devices comprise a gate electrode, a channel region formed beneath the gate electrode, a source region in contact with one side of the channel region, a first conductive region formed in a semiconductor layer at the outer side of the source region and made of a metal or metal compound, a drain region formed in contact with the other side of the channel region, and a second conductive region formed in the semiconductor layer at the outer side of the drain region and consisting of a metal or a metal compound. The transistor has an SOI structure which has an improved breakdown voltage between the source region and the drain region with low sheet resistances of the source and drain regions. Methods for making the transistor devices are also described.

摘要翻译： 晶体管器件包括栅极电极，形成在栅极电极下方的沟道区域，与沟道区域的一侧接触的源极区域，形成在源极区域的外侧的半导体层中的第一导电区域， 金属或金属化合物，与沟道区域的另一侧接触形成的漏极区域和形成在漏极区域的外侧的半导体层中并由金属或金属化合物构成的第二导电区域。 晶体管具有SOI结构，其在源极区和漏极区之间具有改善的源极和漏极区的薄片电阻的击穿电压。 还描述了制造晶体管器件的方法。