摘要:
A semiconductor device has a semiconductor layer such as of Si, an insulator film formed on the semiconductor layer and having a contact hole formed therein, a first contacting layer such as of Ti formed in the contact hole so as to be in contact with the semiconductor layer, a second contacting layer such as of TiN formed on the first contact material, and a contacting material such as W formed on the second contacting layer so as to substantially fill the contact hole. The first contacting layer in as formed state has a thickness of 4 nm or greater, while the second contacting layer as formed has a thickness of 1 nm or greater. The optimum thicknesses of the contacting layers are determined based on the pattern rule, e.g., 3.5 m rule, and the kinds of the materials such as Ti, TiN and W. Electrically stable ohmic contact can be obtained at a high yield.
摘要:
A method of producing a semiconductor device able to prevent a change of shape of a contact hole and to form a contact having a low resistivity and low variability in resistivity, comprising the steps of: forming a conductive layer in a substrate; forming an insulating layer on the conductive layer; forming an opening used as the contact hole in the insulating layer to penetrate and reach the conductive layer; and removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching and using an etching gas containing a fluorine compound gas at a predetermined concentration in a predetermined pressure wherein the concentration and pressure are determined within a range able to control an etching amount of the native oxide.
摘要:
An organic photoreceptor is disclosed, comprising on an electrically conductive support an intermediate layer, a charge generation layer, a charge transport layer and a protective layer in this order, wherein the protective layer contains inorganic particles in an amount of not less than 5% by mass and not more than 30% by mass, and a skewness (Rsk) of a cross section curve of a surface of the electrically conductive support is within a range of −8
摘要:
An electrophotographic photoreceptor including a charge generating layer and a charge transfer layer accumulated on a support member, the charge transfer layer including at least two layers of a support side layer and a surface side layer, wherein the support side layer contains A mol/cm3 of charge mol/cm3 of charge transfer material having a dipolar moment of not more than 0.75 and inorganic particles having a number average primary particle diameter of 3-150 nm, wherein A and B satisfies relations of (1) and (2), 9.0×10−4>A>3.0×10−4 (1) 8.0×10−4>B>2.0×10−5 (2).
摘要:
An objective is to provide an Image forming method and an image forming apparatus exhibiting neither failure in lack of line image nor image defect in halftone images, together with extremely high image quality and longer lifetime. Disclosed is an image forming method possessing the steps of evenly charging an organic photoreceptor; conducting a light exposure process; conducting a developing process to visualize the electrostatic latent image formed on the organic photoreceptor to form a toner image; transferring the toner image into a transfer medium; and conducting a cleaning process to remove a residual toner from the organic photoreceptor, the method further comprising the step of replenishing a developing device with a developer comprising toner and carrier, wherein the organic photoreceptor comprises a surface protective layer containing a filler, and the carrier is mixed with the toner, after attaching a lubricant onto a carrier particle in advance.
摘要:
A method for forming a film of refractory metal used for interconnection in a semiconductor integrated circuit and, above all, to a method for forming a tungsten film (Blk-W film) by a blanket CVD method. A blanket tungsten (Blk-W) film 10 is formed with good adherence and coverage on an SiO.sub.X based interlayer insulating film 3 having a minute-sized contact hole 4 for improving reliability in an interconnection. Before proceeding to Blk-W-CVD, a substrate having a Ti-based adherent layer 7 on its uppermost surface is heated and exposed to a silane-based gas atmosphere for forming Si-nuclei on its surface. A W-nucleus 9 is formed by reducing the WF.sub.6 gas with H.sub.2 and a Blk-W film 10 is also formed by reducing the WF.sub.6 with SiH.sub.4 under a rate determined by the rate of the surface reaction. If the substrate is preliminarily heated before forming the Si nuclei, formation of the Si nuclei proceeds with improved uniformity. The W-nuclei may be carried out uniformly in a temperature range of 450.degree. C. or higher. If the substrate heating temperature during high speed growth is lowered to a temperature lower than that during W-nucleus formation, the thermal stress in the substrate may be released for further improving adherence between the Blk-W film 10 and the substrate.
摘要:
An objective is to provide an image forming method and an image forming apparatus exhibiting neither failure in lack of line image nor image defect in halftone images, together with extremely high image quality and longer lifetime. Disclosed is an image forming method possessing the steps of evenly charging an organic photoreceptor; conducting a light exposure process; conducting a developing process to visualize the electrostatic latent image formed on the organic photoreceptor to form a toner image; transferring the toner image into a transfer medium; and conducting a cleaning process to remove a residual toner from the organic photoreceptor, the method further comprising the step of replenishing a developing device with a developer comprising toner and carrier, wherein the organic photoreceptor comprises a surface protective layer containing a filler, and the carrier is mixed with the toner, after attaching a lubricant onto a carrier particle in advance.
摘要:
An electrophotographic photoreceptor including a charge generating layer and a charge transfer layer accumulated on a support member, the charge transfer layer including at least two layers of a support side layer and a surface side layer, wherein the support side layer contains A mol/cm3 of charge mol/cm3 of charge transfer material having a dipolar moment of not more than 0.75 and inorganic particles having a number average primary particle diameter of 3-150 nm, wherein A and B satisfies relations of (1) and (2), 9.0×10−4>A>3.0×10−4 (1) 8.0×10−4>B>2.0×10−5 (2)