公开(公告)号：US08821053B2

公开(公告)日：2014-09-02

申请号：US13469687

申请日：2012-05-11

申请人： Ichiro Nakayama

发明人： Ichiro Nakayama

IPC分类号： B41J11/70 ,  B41J13/10

CPC分类号： B41J11/70 ,  B26D1/305 ,  B26D7/015 ,  B41J11/006 ,  B41J13/106

摘要： A paper discharge device has a paper feed mechanism configured to convey recording paper; an automatic cutter that has a drive unit and configured to cut the recording paper conveyed by the paper feed mechanism into a slip by drive power from the drive unit; and a paper guide unit that has a paper guide surface configured to support the slip cut by the automatic cutter, and a protruding part that is disposed proximate to the guide surface and supports part of the cut end of the slip at a position configured to cause the part of the cut end to contact the recording paper conveyed by the paper feed mechanism.

摘要翻译： 排纸装置具有被配置为传送记录纸的供纸机构; 具有驱动单元并被配置为通过来自驱动单元的驱动力将由进纸机构传送的记录纸切割成滑动件的自动切割器; 以及纸引导单元，其具有构造成支撑由所述自动切割器进行的滑动切割的纸张引导表面，以及突出部分，所述突出部分设置在所述引导表面附近并且支撑所述滑动部的所述切割端的一部分， 切割端的一部分接触由进纸机构输送的记录纸。

公开(公告)号：US20140020750A1

公开(公告)日：2014-01-23

申请号：US14006357

申请日：2012-03-28

申请人： Yasushi Taniguchi ,  Shigeru Sankawa ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

发明人： Yasushi Taniguchi ,  Shigeru Sankawa ,  Kouji Arai ,  Hiroshi Tanabe ,  Ichiro Nakayama ,  Naoshi Yamaguchi

IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L29/04

CPC分类号： H01L31/02363 ,  H01L21/30604 ,  H01L29/045 ,  Y02E10/50

摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.

摘要翻译： 本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。 本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。 该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

公开(公告)号：US08624340B2

公开(公告)日：2014-01-07

申请号：US13215276

申请日：2011-08-23

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Hiroshi Kawaura ,  Tetsuya Yukimoto

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Hiroshi Kawaura ,  Tetsuya Yukimoto

IPC分类号： H01L27/14 ,  H01L21/44

CPC分类号： H01L21/02667 ,  H05H1/28 ,  H05H1/34 ,  H05H1/3405

摘要： In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.

摘要翻译： 在等离子体焰炬单元中，形成线圈的铜棒整体设置在形成于石英块中的铜棒插入孔的内部，使得石英块被在铜杆插入孔和冷却水管内流动的水冷却。 等离子体喷射口形成在割炬单元的最下部。 当气体被供应到细长室内的空间中时，向铜棒供应高频功率以在细长室内的空间中产生等离子体，使得将等离子体施加到基底。

公开(公告)号：US20120288318A1

公开(公告)日：2012-11-15

申请号：US13469687

申请日：2012-05-11

申请人： Ichiro NAKAYAMA

发明人： Ichiro NAKAYAMA

IPC分类号： B41J11/66

CPC分类号： B41J11/70 ,  B26D1/305 ,  B26D7/015 ,  B41J11/006 ,  B41J13/106

摘要： A paper discharge device has a paper feed mechanism configured to convey recording paper; an automatic cutter that has a drive unit and configured to cut the recording paper conveyed by the paper feed mechanism into a slip by drive power from the drive unit; and a paper guide unit that has a paper guide surface configured to support the slip cut by the automatic cutter, and a protruding part that is disposed proximate to the guide surface and supports part of the cut end of the slip at a position configured to cause the part of the cut end to contact the recording paper conveyed by the paper feed mechanism.

摘要翻译： 排纸装置具有被配置为传送记录纸的供纸机构; 具有驱动单元并被配置为通过来自驱动单元的驱动力将由进纸机构传送的记录纸切割成滑动件的自动切割器; 以及纸引导单元，其具有构造成支撑由所述自动切割器进行的滑动切割的纸张引导表面，以及突出部分，所述突出部分设置在所述引导表面附近并且支撑所述滑动部的所述切割端的一部分， 切割端的一部分接触由进纸机构输送的记录纸。

公开(公告)号：US08288259B2

公开(公告)日：2012-10-16

申请号：US12950048

申请日：2010-11-19

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/223

CPC分类号： H01J37/3244 ,  H01J37/32412 ,  H01L21/2236

摘要： With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.

摘要翻译： 随着真空室内部的抽真空，并且气体供应到真空室中停止，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体， 同时向样品电极提供高频电力。 通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

公开(公告)号：US07858155B2

公开(公告)日：2010-12-28

申请号：US11666773

申请日：2005-10-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： A61N5/00 ,  G21G5/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/2236 ,  H01L21/67069

摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

摘要翻译： 本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。 通过排气孔12，通过作为排气装置的涡轮分子泵3排出，通过气体入口11将气体从气体供给装置2引入真空容器1。真空容器1内的压力保持在 通过压力调节阀4的规定值。13.56MHz的高频电力从高频电源5供给到靠近与样品电极6相对的电介质窗7的线圈8， 在真空容器1中产生耦合等离子体。提供用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。表面晶体 通过改善样品电极6的结构，使硅晶片9的层成为无定形。

公开(公告)号：US07626184B2

公开(公告)日：2009-12-01

申请号：US12057117

申请日：2008-03-27

申请人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： H01L29/04 ,  G21K5/10

CPC分类号： H01L21/67167 ,  H01J37/32412 ,  H01L21/2236

摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

摘要翻译： 当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。 为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。 为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

公开(公告)号：US07582492B2

公开(公告)日：2009-09-01

申请号：US11597166

申请日：2005-05-19

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L21/2236 ,  H01L21/0276

摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

摘要翻译： 本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤， 以及通过光辐射进行退火的步骤。 根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

公开(公告)号：US20090130335A1

公开(公告)日：2009-05-21

申请号：US12065586

申请日：2006-09-01

申请人： Tomohiro Okumura ,  Hiroyuki Ito ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Ichiro Nakayama ,  Shogo Okita ,  Hisao Nagai

发明人： Tomohiro Okumura ,  Hiroyuki Ito ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Ichiro Nakayama ,  Shogo Okita ,  Hisao Nagai

IPC分类号： H05H1/24 ,  B05C11/00

CPC分类号： H01J37/321

摘要： A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window. The flow rates of gases that are introduced through the gas flow-out holes and the gas flow-out holes, respectively, can be controlled independently of each other, whereby the uniformity of processing can be increased.

摘要翻译： 一种均匀性高的等离子体掺杂的方法。 将预定气体从气体供给装置引入真空容器中，同时通过作为排气装置的涡轮分子泵通过排气孔排出。 通过压力调节阀将真空容器内的压力保持在规定值。 13.56MHz的高频功率从高频电源供给到靠近与样品电极相对的电介质窗口的线圈，由此在真空容器中产生感应耦合等离子体。 电介质窗由多个电介质板构成，并且在至少两个彼此相对的电介质板的至少一个表面上形成槽。 气体通道由槽和与槽相对的平坦表面形成，并且形成在电介质板中最靠近样品电极的气体流出孔与电介质窗内的凹槽连通。 分别通过气体流出孔和气体流出孔引入的气体的流量可以彼此独立地控制，从而可以提高处理的均匀性。

公开(公告)号：US20080258082A1

公开(公告)日：2008-10-23

申请号：US11666773

申请日：2005-10-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： G21G5/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/2236 ,  H01L21/67069

摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

摘要翻译： 本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。 通过排气孔12通过作为排气装置的涡轮分子泵3排出，将规定的气体从气体供给装置2经由气体入口11导入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。 从高频电源5将13.56MHz的高频电力供给到与样品电极6相对的电介质窗7附近设置的线圈8，由此在真空容器1内产生感应耦合等离子体 。 提供了用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。 通过改善样品电极6的结构，使硅晶片9的表面晶体层成为非晶体。