Organic Light-Emitting Display Device and Method of Manufacturing the Same
    42.
    发明申请
    Organic Light-Emitting Display Device and Method of Manufacturing the Same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20120146031A1

    公开(公告)日:2012-06-14

    申请号:US13210532

    申请日:2011-08-16

    Applicant: June-Woo Lee

    Inventor: June-Woo Lee

    Abstract: An organic light-emitting display device in which a pixel electrode is formed by extending from source and drain electrodes, a capacitor including a thin upper capacitor electrode formed below the pixel electrode and constituting a metal-insulator-metal (MIM) CAP structure, thereby simplifying manufacturing processes, increasing an aperture ratio, and improving a voltage design margin.

    Abstract translation: 一种有机发光显示装置,其中像素电极通过从源极和漏极延伸而形成,电容器包括形成在像素电极下方并构成金属 - 绝缘体 - 金属(MIM)CAP结构的薄上电容器电极,由此 简化制造工艺,增加开口率,提高电压设计余量。

    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    43.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20120138936A1

    公开(公告)日:2012-06-07

    申请号:US13158632

    申请日:2011-06-13

    Abstract: In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: a substrate in which a light-emitting region and a thin-film transistor (TFT) region are defined; and a plurality of insulating films formed on the substrate. A refractive index changes at only one of the interfaces between insulating films, which correspond to the light-emitting region and are formed between the substrate and a first electrode of an organic electroluminescence display element, and a refractive index changes at two or more of the interfaces between insulating films which correspond to the TFT region.

    Abstract translation: 在有机发光显示装置及其制造方法中,有机发光显示装置包括:限定了发光区域和薄膜晶体管(TFT)区域的基板; 以及形成在基板上的多个绝缘膜。 折射率仅在对应于发光区域的绝缘膜之间的界面之一变化,并且形成在基板和有机电致发光显示元件的第一电极之间,折射率在两个或更多个 对应于TFT区域的绝缘膜之间的界面。

    GATE-DRIVING APPARATUS AND DISPLAY DEVICE INCLUDING THE SAME
    44.
    发明申请
    GATE-DRIVING APPARATUS AND DISPLAY DEVICE INCLUDING THE SAME 有权
    门驱动装置和包括其的显示装置

    公开(公告)号:US20100225621A1

    公开(公告)日:2010-09-09

    申请号:US12709846

    申请日:2010-02-22

    Abstract: A gate driving apparatus includes a first stage which outputs a first gate output signal, and a second stage which outputs a second gate output signal. The first stage includes: a transistor which includes a gate electrode, a source electrode and a drain electrode; and a dummy transistor which includes a dummy gate electrode, a dummy source electrode and a dummy drain electrode. The gate electrode receives the second gate output signal, and the dummy source electrode is connected to the source electrode or the drain electrode of the transistor and prevents static electricity from flowing to the first stage.

    Abstract translation: 栅极驱动装置包括输出第一栅极输出信号的第一级和输出第二栅极输出信号的第二级。 第一级包括:晶体管,其包括栅电极,源电极和漏电极; 以及包括虚拟栅电极,虚拟源电极和虚设漏电极的虚拟晶体管。 栅电极接收第二栅极输出信号,虚拟源电极连接到晶体管的源电极或漏电极,防止静电流入第一级。

    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    45.
    发明申请
    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    平板显示装置及其制造方法

    公开(公告)号:US20100052534A1

    公开(公告)日:2010-03-04

    申请号:US12546965

    申请日:2009-08-25

    Applicant: June-Woo LEE

    Inventor: June-Woo LEE

    CPC classification number: H01L27/3262 H01L27/12 H01L27/3248 H01L2227/323

    Abstract: A flat panel display device that can achieve uniformity between pixel circuits and improved image quality includes: a first pixel including a first light emitting device and not including a pixel circuit; and a second pixel spaced apart from the first pixel and including a first circuit that is electrically connected to the first light emitting device. Active layers of thin film transistors in the pixel circuits are formed of polycrystalline silicon crystallized from an amorphous silicon and patterned from an area of the polycrystalline silicon in which lasers of an excimer laser annealing process did not overlap.

    Abstract translation: 可以实现像素电路之间的均匀性和改进的图像质量的平板显示装置包括:包括第一发光装置并且不包括像素电路的第一像素; 以及与第一像素间隔开的第二像素,并且包括电连接到第一发光器件的第一电路。 像素电路中的薄膜晶体管的有源层由从非晶硅结晶的多晶硅形成,并从多晶硅的区域图案化,其中准分子激光退火工艺的激光器不重叠。

    Method for fabricating a metal-insulator-metal capacitor
    46.
    发明授权
    Method for fabricating a metal-insulator-metal capacitor 有权
    金属绝缘体金属电容器的制造方法

    公开(公告)号:US07473984B2

    公开(公告)日:2009-01-06

    申请号:US11710917

    申请日:2007-02-27

    Applicant: June Woo Lee

    Inventor: June Woo Lee

    CPC classification number: H01L23/5223 H01L2924/0002 H01L2924/00

    Abstract: A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.

    Abstract translation: 一种在半导体器件中制造多个布线金属的方法。 该方法包括在半导体衬底上形成下布线金属,在下布线金属上形成层间电介质,并选择性地去除层间电介质以形成接触电介质膜,体电介质膜和接触体和体电介质膜之间的开口 。 该方法还包括用低k材料填充开口,在接触体和体电介质膜和低k材料上形成覆盖电介质,形成穿过封盖电介质的接触孔和接触电介质膜,以连接到 下布线金属,并且通过接触孔形成与下布线金属电互连的上布线金属。

    Semiconductor device with a metal line and method of forming the same
    47.
    发明授权
    Semiconductor device with a metal line and method of forming the same 失效
    具有金属线的半导体器件及其形成方法

    公开(公告)号:US07371678B2

    公开(公告)日:2008-05-13

    申请号:US11320587

    申请日:2005-12-30

    Applicant: June-Woo Lee

    Inventor: June-Woo Lee

    Abstract: A semiconductor device with a metal line and a method of forming the same. The method includes forming an insulation layer on a semiconductor substrate including a predetermined lower structure, forming a vertical hole and a horizontal hole by etching the insulation layer, forming a supporting part by filling the vertical holes and horizontal holes with a nitride layer, and forming a damascene metal line layer by forming a metal line on the insulation layer. The method also includes performing the forming process for the damascene metal line layer a plurality of times, removing the insulation layer, and forming a protective layer on the highest layer of the damascene metal line layer.

    Abstract translation: 具有金属线的半导体器件及其形成方法。 该方法包括在包括预定的下部结构的半导体衬底上形成绝缘层,通过蚀刻绝缘层形成垂直孔和水平孔,通过用氮化物层填充垂直孔和水平孔来形成支撑部分,以及形成 通过在绝缘层上形成金属线而形成镶嵌金属线层。 该方法还包括多次对镶嵌金属线层进行成形处理,去除绝缘层,以及在镶嵌金属线层的最高层上形成保护层。

    Method for fabricating a metal-insulator-metal capacitor
    48.
    发明授权
    Method for fabricating a metal-insulator-metal capacitor 失效
    金属绝缘体金属电容器的制造方法

    公开(公告)号:US07202158B2

    公开(公告)日:2007-04-10

    申请号:US11320590

    申请日:2005-12-30

    Applicant: June Woo Lee

    Inventor: June Woo Lee

    CPC classification number: H01L23/5223 H01L2924/0002 H01L2924/00

    Abstract: A method fabricating multiple wiring metals in a semiconductor device. The method includes forming a lower wiring metal on a semiconductor substrate, forming an interlayer dielectric on the lower wiring metal, and selectively removing the interlayer dielectric to form a contact dielectric film, a body dielectric film and an opening between the contact and body dielectric films. The method also includes filling the opening with low-k material, forming a capping dielectric on the contact and body dielectric films and the low-k material, forming a contact hole passing through the capping dielectric and the contact dielectric film to be connected to the lower wiring metal, and forming an upper wiring metal electrically interconnected to the lower wiring metal through the contact hole.

    Abstract translation: 一种在半导体器件中制造多个布线金属的方法。 该方法包括在半导体衬底上形成下布线金属,在下布线金属上形成层间电介质,并选择性地去除层间电介质以形成接触电介质膜,体电介质膜和接触体和体电介质膜之间的开口 。 该方法还包括用低k材料填充开口,在接触体和体电介质膜和低k材料上形成覆盖电介质,形成穿过封盖电介质的接触孔和接触电介质膜,以连接到 下布线金属,并且通过接触孔形成与下布线金属电互连的上布线金属。

    Method and apparatus for controlling breakage by static electricity
    49.
    发明授权
    Method and apparatus for controlling breakage by static electricity 有权
    控制静电破坏的方法和装置

    公开(公告)号:US09105593B2

    公开(公告)日:2015-08-11

    申请号:US13554008

    申请日:2012-07-20

    CPC classification number: H01L27/3276

    Abstract: A display device includes a first insulation layer on a substrate, gate wires on the first insulation layer, the gate wires extending in a first direction, a second insulation layer on the gate wires, data wires on the second insulation layer, the data wires extending in a second direction crossing the first direction, pixels at intersection regions of gate wires and data wires, respectively, the pixels being connected to respective gate wires and data wires, and data leading diodes having an island form and connected to the data wires, the data leading diodes being configured to induce breakage of the first insulation layer when external static electricity passes through the data wires.

    Abstract translation: 显示装置包括基板上的第一绝缘层,第一绝缘层上的栅极布线,栅极布线沿第一方向延伸,栅极布线上的第二绝缘层,第二绝缘层上的数据布线,数据线延伸 在与第一方向交叉的第二方向上,栅极线和数据线的交叉区域中的像素分别连接到相应的栅极线和数据线,以及具有岛状并连接到数据线的数据引线二极管, 数据引导二极管被配置为当外部静电通过数据线时引起第一绝缘层的破坏。

    Array test device, method for testing an organic light emitting display device, and method for manufacturing the organic light emitting display device
    50.
    发明授权
    Array test device, method for testing an organic light emitting display device, and method for manufacturing the organic light emitting display device 有权
    阵列测试装置,有机发光显示装置的测试方法以及有机发光显示装置的制造方法

    公开(公告)号:US08901936B2

    公开(公告)日:2014-12-02

    申请号:US13570378

    申请日:2012-08-09

    Abstract: A method for testing an array for a pixel circuit of an organic light emitting diode display, which includes a first transistor that transmits a driving current corresponding to a data signal to an organic light emitting diode according to a scan signal and at least one capacitor, uses an array test device having a control device and a driver. The method includes performing a first irradiation of electron beams to an exposed portion of a first electrode of the at least one capacitor before manufacturing of the organic light emitting diode is completed, calibrating the control device of the array test device based on secondary electrons output by the at least one capacitor, performing a second irradiation of electron beams to an anode of the pixel circuit, and detecting whether the first transistor is normally operated based on an output amount of secondary electrons output by the anode.

    Abstract translation: 一种用于测试有机发光二极管显示器的像素电路的阵列的方法,其包括根据扫描信号将至少一个电容器将与数据信号相对应的驱动电流传输到有机发光二极管的第一晶体管, 使用具有控制装置和驱动器的阵列测试装置。 该方法包括在完成有机发光二极管的制造之前,对所述至少一个电容器的第一电极的暴露部分进行电子束的第一次照射,基于二次电子输出的阵列测试装置的控制装置进行校准 所述至少一个电容器,对所述像素电路的阳极进行电子束的第二次照射,并且基于由所述阳极输出的二次电子的输出量来检测所述第一晶体管是否正常工作。

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