公开(公告)号：US20060054980A1

公开(公告)日：2006-03-16

申请号：US11226053

申请日：2005-09-13

Applicant: Jong-Pyo Kim ,  Jong-Ho Lee ,  Hyung-Suk Jung ,  Jung-Hyoung Lee

Inventor： Jong-Pyo Kim ,  Jong-Ho Lee ,  Hyung-Suk Jung ,  Jung-Hyoung Lee

IPC: H01L21/8238 ,  H01L29/94

CPC classification number: H01L21/28202 ,  H01L21/28185 ,  H01L21/28194 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833 ,  H01L29/7881 ,  H01L29/94 ,  Y10T428/265

Abstract: A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (M1-xSixOy) or amorphous silicate nitride (M1-xSixOyNz), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M′Oy) or amorphous metal oxynitride (M′OyNz).

Abstract translation: 在一个实施例中提供了一种微电子器件的电介质多层结构，其中泄漏电流特性和介电常数得到改善。 电介质多层结构包括由非晶态硅酸盐（M 1-x Si x O x O y）或无定形硅酸盐制成的下电介质层 氮化物（M 1-x Si x O y N z N z），以及形成的上电介质层 在下部电介质层的顶部，并且由非晶金属氧化物（M'O y y）或非晶金属氧氮化物（M'O y N y） / SUB>）。

公开(公告)号：US20050152094A1

公开(公告)日：2005-07-14

申请号：US11032150

申请日：2005-01-11

Applicant: Yong-kuk Jeong ,  Jung-Hyoung Lee ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Min-woo Song

Inventor： Yong-kuk Jeong ,  Jung-Hyoung Lee ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Min-woo Song

IPC: H01L27/108 ,  H01G4/10 ,  H01G4/20 ,  H01L21/02 ,  H01L27/08 ,  H01G4/28

CPC classification number: H01L21/02172 ,  H01G4/10 ,  H01G4/20 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31645 ,  H01L27/0805 ,  H01L28/56 ,  H01L28/65

Abstract: In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein the dielectric layer includes a lower dielectric region contacting the lower electrode, an upper dielectric region contacting the upper electrode, and at least one middle dielectric region between the lower dielectric region and the upper dielectric region, the at least one middle dielectric region having a less crystalline region than both the lower dielectric region and the upper dielectric region.

Abstract translation: 在电容器及其制造方法中，电容器包括下电极，下电极上的电介质层和电介质层上的上电极，其中介电层包括与下电极接触的下电介质区域， 与上部电极接触的上部电介质区域，以及位于下部电介质区域和上部电介质区域之间的至少一个中间电介质区域，所述至少一个中间电介质区域具有比下部电介质区域和上部电介质区域更小的结晶区域 。