Abstract:
A level shifter includes; a level conversion unit which receives a first input signal and a second input signal, wherein the second input signal is an inversion of the first input signal, and generates a first output signal having substantially a same phase of the first input signal and a voltage which is higher than the first input signal and a second output signal having substantially a same phase as the first input signal and a voltage which is lower than the first input signal; and wherein the level shifter further includes an amplifying unit which receives the first and second output signals and generates a third output signal having substantially a same phase as the first input signal and an amplitude which is greater than the first input signal.
Abstract:
There is provided a device and method for retransmitting error-detected data in a mobile communication system. A transmitter generates S sub-codes Ci (i=0, 1, 2, . . . , S−1) from a physical layer packet (PLP) information stream using quasi-complementary turbo codes, initially transmits the first sub-code C0, and then sequentially transmits the following sub-codes each time a retransmission request is received for the initial transmission or a previous retransmission. Upon receipt of a retransmission request for the last sub-code CS−1, the transmitter transmits the first sub-code C0 and then sequentially transmits the following sub-codes each time a retransmission request is received.
Abstract:
An organic light emitting display that can minimize degradation of a drive transistor comprising a first switching element whose control electrode is electrically coupled to a scan line, being electrically coupled between a data line and a first voltage line for transmitting a data signal; a drive transistor whose control electrode is electrically coupled to the first switching element, being electrically coupled between the first and second voltage lines; an organic light emitting diode electrically coupled to the drive transistor, displaying an image by a current supplied through the drive transistor; a first capacitive element electrically coupled between the control electrode of the drive transistor and the first switching element; a second capacitive element electrically coupled between the first capacitive element and the second voltage line; a second switching element electrically coupled between the first voltage line and the control electrode of the drive transistor; a third switching element electrically coupled between the first switching element and the drive transistor; a fourth switching element electrically coupled between the control electrode of the drive transistor and the second voltage line; and a fifth switching element electrically coupled between the drive transistor and the second voltage line.
Abstract:
Disclosed is a refrigerator receptacle including a first tray adapted to move into/out of a storage space like a drawer, a reception space being defined in the first tray, the reception space having an upward opening; a second tray adapted to move in an inward/outward movement direction of the first tray, a reception space being defined in the second tray, the reception space having an upward opening; a guide member for guiding movement of the second tray, an insertion groove being formed on the guide member, an upper end of both lateral surfaces of the first tray being inserted into the insertion groove; and a fastener extending through one of the first tray and the guide member so as to be fastened to other of the first tray and the guide member.
Abstract:
A pixel structure using a voltage programming type active matrix organic light emitting diode (OLED) which can minimize a current deterioration phenomenon is disclosed. The pixel structure includes a fifth TFT receiving an external management signal EMS through its gate, having a drain region connected to a cathode part of an OLED, and receiving an input of an OLED current through its source-drain current path when the OLED emits light, a fourth TFT receiving a set scan signal SCAN through its gate and having source and drain regions connected to gate and drain parts of a third TFT T3, respectively, the third TFT T3 being a current driving transistor for determining the OLED current when the OLED emits light, a capacitor C having upper and lower plates connected to the gate part of the third TFT T3 and a ground voltage VSS, respectively, a first TFT receiving the SCAN signal through its gate and transferring a data voltage to a source region of the third TFT T3, a second TFT receiving the EMS signal through its gate and connecting the lower part of the capacitor C to the source region of the third TFT T3, and a sixth TFT having source and drain regions connected to an external clock signal CLK and the gate region of the third TFT T3, respectively, and having a gate connected to the gate part of the third TFT T3. An anode part of the OLED receives a voltage VDD.
Abstract translation:公开了一种可以使电流劣化现象最小化的电压编程型有源矩阵有机发光二极管(OLED)的像素结构。 像素结构包括通过其栅极接收外部管理信号EMS的第五TFT,具有连接到OLED的阴极部分的漏极区域,并且当OLED发光时,通过其源极 - 漏极电流路径接收OLED电流的输入 ,第四TFT通过其栅极接收设置的扫描信号SCAN,并且分别具有连接到第三TFT T 3的栅极和漏极部分的源极和漏极区域,第三TFT T 3是用于确定OLED电流的电流驱动晶体管, OLED发光,具有连接到第三TFT T 3的栅极部分的上板和下板的电容器C和接地电压VSS分别通过其栅极接收SCAN信号的第一TFT并将数据电压传送到源极 区域,第二TFT通过其栅极接收EMS信号并将电容器C的下部连接到第三TFT T 3的源极区域,以及第六TFT,其具有源极和栅极 连接到外部时钟信号CLK的n个区域和第三TFT T 3的栅极区域,并且具有连接到第三TFT T 3的栅极部分的栅极。 OLED的阳极部分接收电压VDD。
Abstract:
There is provided a device and method for retransmitting error-detected data in a mobile communication system. A transmitter generates S sub-codes Ci (i=0, 1, 2, . . . , S−1) from a physical layer packet (PLP) information stream using quasi-complementary turbo codes, initially transmits the first sub-code C0, and then sequentially transmits the following sub-codes each time a retransmission request is received for the initial transmission or a previous retransmission. Upon receipt of a retransmission request for the last sub-code CS−1, the transmitter transmits the first sub-code C0 and then sequentially transmits the following sub-codes each time a retransmission request is received.
Abstract:
The present invention relates to a double drawer of a refrigerator. An object of the present invention is to provide a double drawer of a refrigerator, wherein a sufficient extended length can be secured, the space usability is improved, and the durability can also be improved in spite of its long extended length. To this end, a double drawer of a refrigerator comprises a main drawer having a predetermined space defined therein for accommodating foods; an auxiliary drawer having an inner space defined therein for accommodating the main drawer, the auxiliary drawer including drawing rails for guiding the main drawer to slide in a fore and aft direction and allowing the main drawer to slide in and out; and guide rails installed in a main body of the refrigerator to guide the auxiliary drawer to slide in the fore and aft direction. According to the present invention so configured, there are advantages in that a sufficient extended length of the main drawer can be secured, and the durability can be improved since the main drawer can withstand a moment resulting from the weight of the foods accommodated in the main drawer by the extended length in spite of the sufficient extended length of the main drawer.
Abstract:
The present invention discloses a thin film transistor (TFT) and fabrication method thereof for a liquid crystal display device. The thin film transistor includes a substrate; a buffer layer on the substrate; an amorphous silicon layer having a pure amorphous silicon area and doped amorphous silicon areas, the pure amorphous silicon area having vertical offsets in both sides thereof, the doped amorphous silicon areas having source and drain areas, the doped amorphous silicon areas being doped by a dopant, the source and drain areas positioned on both sides of the pure amorphous silicon area and etched to expose the vertical offsets; an oxidized layer on the pure amorphous silicon area; a polycrystalline silicon layer on the oxidized layer; a gate insulating layer on the polycrystalline silicon layer; a gate electrode on the gate insulating layer; an inter layer insulator having first and second contact holes, the inter layer insulator covering the amorphous silicon layer, the oxidized layer, the polycrystalline silicon layer, the gate insulating layer, and the gate electrode; and source and drain electrodes contacting the source areas through the first contact hole and the drain area through the second contact hole, respectively.
Abstract:
Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.
Abstract:
To accomplish the objects of the present invention, among others, the present invention provides a thin-film transistor that has a channel region operatively having an offset region only during turn-off. Source and drain regions self-aligned with different ends of the channel region. A gate region is formed on a gate insulating layer disposed over the channel region and has a main gate accepting a gate voltage, a subgate which comes into ohmic contact with the source region, and a junction gate for forming a rectifying junction between the main gate and subgate.