Abstract:
Provided are a method of forming key patterns and a method of fabricating a semiconductor device using the same. The method of forming key patterns may include forming gate and key patterns on a cell region and a scribe lane region, respectively. Here, the key patterns may be formed to have a large width and a larger pitch than those of the gate patterns.
Abstract:
A liquid crystal display panel includes a touch sensor and the touch sensor includes a plurality of x-axis read-out lines, a plurality of y-axis read-out lines crossing the x-axis read-out lines, a plurality of sensor units provided in a plurality of regions defined by the x-axis read-out lines and the y-axis read-out lines. Each sensor unit comprises a reset unit that outputs a sampling voltage based on a reset voltage, a capacitance detector that generates a modified sampling voltage from the sampling voltage based on a variation of a cell gap of the display panel caused by a touch of the display panel, a first output unit that changes an electric potential of a corresponding x-axis read-out line in response to the modified sampling voltage and a second output unit that changes an electric potential of a corresponding y-axis read-out line in response to the modified sampling voltage.
Abstract:
Disclosed are a method for polymerizing polysilsesquioxane from a trialkoxysiloxane monomer, including: preparing an aqueous organic solution including a trialkoxysiloxane monomer, an organic solvent, water and a catalyst; and selectively preparing a polysilsesquioxane with a cage structure or a polysilsesquioxane with a ladder structure by adjusting the amount of the organic solvent or water in the aqueous organic solution, and a polysilsesquioxane with a cage structure or a polysilsesquioxane with a ladder structure prepared therefrom.
Abstract:
A display device with a touch screen includes: first sensing units, each first sensing unit comprising first optical sensors connected in series, each first sensing unit comprising a first terminal for receiving a first voltage, each first sensing unit extending in a first direction; second sensing units, each second sensing unit comprising second optical sensors connected in series, each second sensing unit comprising a first terminal for receiving a second voltage, each second sensing unit extending in a second direction transverse to the first direction; a reset unit for applying a reset voltage to a second terminal of each of the first and second sensing units; and a read-out unit for sensing a touch position based on voltage changes at the second terminals of the first and second sensing units.
Abstract:
A display device has a plurality of pixels, where each pixel includes a light emitting element, a capacitor, a driving transistor having a control terminal, an input terminal, and an output terminal and supplying a driving current to the light emitting element to emit light, a first switching unit diode-connecting the driving transistor and supplying a data voltage to the capacitor in response to a scanning signal, and a second switching unit supplying a driving voltage to the driving transistor and connecting the capacitor to the driving transistor in response to the emission signal, wherein the capacitor is connected to the driving transistor through the first switching unit, stores a control voltage depending on the data voltage and the threshold voltage of the driving transistor, and is connected to the driving transistor through the second switching unit to supply the control voltage to the driving transistor.
Abstract:
A method of increasing 3-HP production efficiency by inhibiting expression of a lactate dehydrogenase, a phosphotransacetylase, and an alcohol dehydrogenase in production of 3-HP using a malonic semialdehyde reduction pathway to prevent metabolite leak and increase a malonyl-CoA pool is disclosed.
Abstract:
The present invention provides a polymer particle and a method of preparing the same. More precisely, the invention provides a polymer particle having optimum impact strength and improved elastic recovery rate by forming the brush having softness on the surface of the monodisperse polymer particle by the anion dispersion polymerization using a conjugated diene monomer.
Abstract:
The present invention relates to an actuator which is one of the energy conversion devices, and is characterized by improving the ability to convert electrical energy into mechanical energy by way of using a dielectric elastomer composite comprising a filler with an efficient dispersibility. In case of using a conventional resilient dielectric layer, there was a problem in that the operating voltage is high, while advantageously exhibiting a fast response and a high strain. The present invention can provide dielectric elastomer composite actuators that show excellent electromechanical conversion properties, by adding a dispersing agent such as a pyrene derivative or a polymeric compound having an amine end group when preparing the composite wherein carbon-based conductive fillers such as carbon blacks, single-walled carbon nanotubes (SWCNTs), double-walled carbon nanotubes (DWCNTs), multi-walled carbon nanotubes (MWCNTs) and graphenes, or high dielectric fillers such as copper phthalo-cyanine (CuPc), MOFs (metal organic frameworks) and barium titanate (BaTiO3) are comprised in a thermoplastic resilient dielectric layer to enhance the dispersibility of the fillers.
Abstract:
A method of increasing 3-HP production efficiency by inhibiting expression of a lactate dehydrogenase, a phosphotransacetylase, and an alcohol dehydrogenase in production of 3-HP using a malonic semialdehyde reduction pathway to prevent metabolite leak and increase a malonyl-CoA pool is disclosed.
Abstract:
A thin film transistor, which has a first passivation layer and a second passivation layer to maintain high reliability while preventing hydrogen from being induced to a semiconductor layer, and a method for fabricating the thin film transistor are provided. The method includes providing a substrate including an insulation substrate, forming a gate electrode on the substrate, forming a gate insulation layer on the substrate and the gate electrode, forming a semiconductor layer on the gate insulation layer, forming source/drain electrodes on the semiconductor layer to expose a portion of a top portion of the semiconductor layer, forming a first passivation layer to cover exposed top portions of the gate insulation layer, the semiconductor layer and the source/drain electrodes, and forming a second passivation layer on the first passivation layer, wherein the forming of the second passivation layer comprises performing deposition at a higher temperature than the forming of the first passivation layer.