Integrated piezoresistive and piezoelectric fusion force sensor

    公开(公告)号:US11243125B2

    公开(公告)日:2022-02-08

    申请号:US16485026

    申请日:2018-02-09

    Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.

    Force sensitive touch panel devices

    公开(公告)号:US10831292B2

    公开(公告)日:2020-11-10

    申请号:US15500986

    申请日:2015-08-04

    Abstract: An example force sensitive touch panel device can include a device body; a touch surface for receiving a touch force; a sensor for sensing touch force that is arranged between the device body and the touch surface; and a membrane configured to mechanically isolate the device body and the touch surface. Additionally, the membrane can apply a preload force to the sensor.

    Ruggedized wafer level MEMS force sensor with a tolerance trench

    公开(公告)号:US10466119B2

    公开(公告)日:2019-11-05

    申请号:US15178976

    申请日:2016-06-10

    Abstract: An example MEMS force sensor is described herein. The MEMS force sensor can include a cap for receiving an applied force and a sensor bonded to the cap. A trench and a cavity can be formed in the sensor. The trench can be formed along at least a portion of a peripheral edge of the sensor. The cavity can define an outer wall and a flexible sensing element, and the outer wall can be arranged between the trench and the cavity. The cavity can be sealed between the cap and the sensor. The sensor can also include a sensor element formed on the flexible sensing element. The sensor element can change an electrical characteristic in response to deflection of the flexible sensing element.

    FORCE-SENSITIVE ELECTRONIC DEVICE
    47.
    发明申请

    公开(公告)号:US20170308197A1

    公开(公告)日:2017-10-26

    申请号:US15492127

    申请日:2017-04-20

    Abstract: An example force-sensitive electronic device is described herein. The device can include a device body, a touch surface bonded to the device body in a bonded region that is arranged along a peripheral edge of the touch surface, and a plurality of force sensors that are arranged between the device body and the touch surface. Each of the plurality of force sensors can be spaced apart from the bonded region.

    Temperature coefficient of offset compensation for force sensor and strain gauge

    公开(公告)号:US12203819B2

    公开(公告)日:2025-01-21

    申请号:US18535230

    申请日:2023-12-11

    Abstract: MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.

    Sealed force sensor with etch stop layer

    公开(公告)号:US11965787B2

    公开(公告)日:2024-04-23

    申请号:US17860941

    申请日:2022-07-08

    Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.

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