Abstract:
Provided are an apparatus and method for minimizing a distribution loss which reconstructs the system construction of a distribution system in consideration of section load characteristics of mutually different distribution system. The apparatus for minimizing a distribution loss which determines a loss calculation period for detecting a loss minimization time point using mutually different distribution systems, calculates loss values of mutually different distribution systems set according to each time point of the loss calculation period, and calculates a total loss value, and selects the mutually different distribution systems one by one during the loss calculation period, and calculates a loss value for specific systems of each distribution system in consideration of a change of a section load in each selected distribution system, determines a loss minimization time point using the specific system loss value of each distribution system and the total loss value.
Abstract:
A method of forming a photomask includes providing a layout of design patterns, setting an optical proximity correction (OPC) with respect to the layout of design patterns, and forming a layout of correction patterns with respect to the layout of design patterns by using the set OPC. The method also includes collecting verification data about the layout of correction patterns by using a layout of contour patterns based on the layout of correction patterns, and verifying whether the layout of design patterns and the layout of correction patterns are substantially identical to each other by using the verification data.
Abstract:
Provided are a novel distribution automation system and its voltage control method, which can supply a stable voltage to a user by properly adjusting the settings of a control device so as to compensate for reactive power at each load terminal. The voltage control method includes: a first step of modeling a distribution system in the form of a distribution load based on constants of four terminals according to the connection type of each node and a distribution line, which constitute the distribution system; a second step of determining a formula for estimating the magnitude of a voltage at a node from a current value of an adjacent node; a third step of determining an objective function including the magnitude of the voltage, calculated through the formula determined in the second step, and a control variable for controlling the magnitude of the voltage; and a fourth step of calculating a value of the control variable to allow the determined objective function to have a minimum value and applying the calculated value to each voltage control device provided in the distribution system.
Abstract:
A method of forming a photomask includes providing a layout of design patterns, setting an optical proximity correction (OPC) with respect to the layout of design patterns, and forming a layout of correction patterns with respect to the layout of design patterns by using the set OPC. The method also includes collecting verification data about the layout of correction patterns by using a layout of contour patterns based on the layout of correction patterns, and verifying whether the layout of design patterns and the layout of correction patterns are substantially identical to each other by using the verification data.
Abstract:
In an inverse calculation circuit, an inverse calculation method, and a storage medium encoded with a computer readable computer program code, a random number generator generates a first random number and a second random number; and an inverter receives a plurality of first bits expressing a first element of a finite field(s) as first inputs, receives a plurality of second bits expressing a second element of a finite field(s) as second inputs. In response to the first and second random numbers, the inverter outputs a plurality of third bits expressing the inverse elements of the first element. The first random number prevents a different power analysis (DPA) decryption attack, and the second random number prevents a timing decryption attack.
Abstract:
Disclosed herein is a soil inflow prevention apparatus in which an angular-rotation opening/closing plate is adapted to be inclined within a predetermined angle by virtue of opening stoppers to prevent a rear portion of the opening/closing plate from being excessively lowered in the beginning that an inflow amount of sewage increases due to rainfall, thereby preventing soil from entering an intercepting sewer in the beginning of an inflow of sewage.
Abstract:
An Internet protocol (IP)-private branch exchange (PBX) system and a method for linking the system with a Voice over Internet Protocol (VoIP) terminal. The IP-PBX system and method allow the VoIP terminal to be registered at an extension of the IP-PBX system, the VoIP terminal supporting a protocol, e.g., H.323 or session initiation protocol (SIP), standardized by a standardization organization, e.g., the International Telecommunication Union (ITU), the Internet Engineering Task Force (IETF), or the European Telecommunications Standards Institute (ETSI).
Abstract:
A socket board may include an upper board supporting at least one test socket. The upper board may have a major surface defining a first reference plane. At least one stem board may support a stem board application circuit. The stem board may have a major surface defining a second reference plane that may intersect the first reference plane. A conductive member may connect the test socket to the stem board application circuit.
Abstract:
Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.