公开(公告)号：US20120008926A1

公开(公告)日：2012-01-12

申请号：US13236900

申请日：2011-09-20

申请人： Tatsufumi Kusuda

发明人： Tatsufumi Kusuda

IPC分类号： F27D11/12

CPC分类号： H05B1/0227 ,  H01L21/26 ,  H01L21/67115 ,  H01L21/68742 ,  H01L21/68785 ,  H01L2924/0002 ,  H01L2924/00

摘要： A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.

摘要翻译： 将电容器，线圈，闪光灯以及诸如IGBT的开关元件串联连接。 控制器向开关元件的栅极输出脉冲信号。 波形设定器根据输入单元输入的内容设置脉冲信号的波形。 在电容器中蓄积的电荷中，脉冲信号被输出到开关元件的栅极，使得闪光灯间歇地发光。 施加到开关元件的脉冲信号的波形的变化将改变流过闪光灯的电流的波形，从而改变发光的形式，从而导致半导体晶片的温度分布的变化。

公开(公告)号：US07091453B2

公开(公告)日：2006-08-15

申请号：US10780420

申请日：2004-02-17

申请人： Hiromi Murayama ,  Tatsufumi Kusuda

发明人： Hiromi Murayama ,  Tatsufumi Kusuda

IPC分类号： F27B5/14

CPC分类号： H01L21/67115 ,  F27B17/0025

摘要： A chamber has a wall surface fitted with a liner. The liner is removably provided to the chamber with no fixed relation therebetween. By simply opening a light source to remove a heat diffusion plate, a hot plate and a tubular member from the chamber, the liner can be easily detached accordingly from the chamber. When a semiconductor wafer cracks to litter the chamber with its fragments, the chamber can be easily cleaned by simply detaching the liner. The liner has an outer surface subjected to surface roughening by honing. When a flash lamp emits flashlight of considerably high intensity, the roughened outer surface of the liner serves to block this flashlight. As a result, the metal surface inside the chamber is prevented from being exposed to the flashlight emitted from the flash lamp.

摘要翻译： 室具有装有衬垫的壁面。 衬套可移除地设置在腔室之间，其间没有固定的关系。 通过简单地打开光源以从腔室移除热扩散板，热板和管状构件，衬套可以容易地从腔室分离。 当半导体晶片以其碎片的方式破裂而对室进行垃圾处理时，可以通过简单地拆卸衬套来轻松清洁室。 衬套具有通过珩磨进行表面粗糙化的外表面。 当闪光灯发射相当高强度的手电筒时，衬套的粗糙的外表面用于阻挡该手电筒。 结果，防止室内的金属表面暴露于从闪光灯发射的手电筒。

公开(公告)号：US20050063448A1

公开(公告)日：2005-03-24

申请号：US10940095

申请日：2004-09-14

申请人： Tatsufumi Kusuda

发明人： Tatsufumi Kusuda

IPC分类号： C23C16/46 ,  H01L21/00 ,  H01L21/26 ,  H01L21/31 ,  G01K19/00 ,  C09K19/00 ,  G01K15/00 ,  G02F1/03

CPC分类号： H01L21/67115

摘要： A thermal processing apparatus (1) comprises a chamber body (6), a holding part (7) for holding a substrate (9) inside the chamber body (6), a light emitting part (5) for heating the substrate (9) through light irradiation and a light measuring part (2) for measuring light energy. The light measuring part (2) comprises a calorimeter (24) disposed outside the chamber body (6), a light guide structure (20) for guiding the light inside the chamber body (6) to the calorimeter (24) and a calculation part (25) for performing computations on the basis of an output of the calorimeter (24). In the thermal processing apparatus (1), by measuring the light from the light emitting part (5) by the calorimeter (24), it is possible to measure the energy of light emitted from the light emitting part (5) during thermal processing inside chamber body (6) and obtain a surface temperature of the substrate (9) by the calculation part (25).

摘要翻译： 热处理装置（1）包括室主体（6），用于在室主体（6）内保持基板（9）的保持部（7），用于加热基板（9）的发光部（5） 通过光照射和用于测量光能的光测量部分（2）。 光测量部件（2）包括设置在室主体（6）外部的量热器（24），用于将室主体（6）内的光引导到量热计（24）的导光结构（20） （25），用于基于量热计（24）的输出进行计算。 在热处理装置（1）中，通过用量热计（24）测量来自发光部（5）的光，可以测量在热处理过程中从发光部（5）发射的光的能量 通过计算部（25）获得基板（9）的表面温度。

公开(公告)号：US06037781A

公开(公告)日：2000-03-14

申请号：US46348

申请日：1998-03-23

申请人： Motohiro Kono ,  Tatsufumi Kusuda

发明人： Motohiro Kono ,  Tatsufumi Kusuda

IPC分类号： G01N27/00 ,  G01R31/26 ,  H01L21/66

CPC分类号： G01R31/2648 ,  H01L22/14

摘要： C-V measurement is first carried out with respect to a target area on a semiconductor wafer using a measuring electrode located over the target area. Parameters used for C-t measurement of the target area (for example, applied voltages Vacc and Vmeas or a recovery time Tr) are then obtained from a C-V characteristic obtained by the C-V measurement. C-t measurement is subsequently carried out with respect to the target area using these parameters.

摘要翻译： 首先使用位于目标区域上方的测量电极相对于半导体晶片上的目标区域进行C-V测量。 然后从由C-V测量获得的C-V特性获得用于目标区域的C-t测量的参数（例如，施加的电压Vacc和Vmeas或恢复时间Tr）。 随后使用这些参数对目标区域进行C-t测量。

公开(公告)号：US5635410A

公开(公告)日：1997-06-03

申请号：US458918

申请日：1995-06-02

申请人： Tatsufumi Kusuda

发明人： Tatsufumi Kusuda

IPC分类号： G01R31/26 ,  H01L21/00 ,  H01L21/28 ,  H01L21/322 ,  H01L21/326 ,  H01L21/66 ,  H01L21/26

CPC分类号： H01L21/28185 ,  H01L21/28176 ,  H01L21/3221 ,  H01L21/326 ,  H01L21/67103

摘要： The time and labor required for bias temperature (BT) treatment of a semi-conductor wafer is reduced by utilizing apparatus in which turning a switch 40 on connects a first d.c. power source 30 to apply a positive high voltage between a first wire 20 and a semiconductor wafer 100 while a second d.c. power source 32 applies a negative high voltage between a second wire 22 and the semiconductor wafer 100. This results in positive corona discharge between the first wire 20 and the semiconductor wafer 100 and negative corona discharge between the second wire 22 and the semiconductor wafer 100. After cessation of corona discharge, the semiconductor wafer 100 is heated to a high temperature for a predetermined time period with a heater 120 embedded in a stage 110 that supports the wafer that is being treated.

摘要翻译： 半导体晶片的偏置温度（BT）处理所需的时间和劳动力通过利用将开关40接通连接第一直流电的装置而减少。 电源30，以在第一导线20和半导体晶片100之间施加正高电压，而第二直流 电源32在第二导线22和半导体晶片100之间施加负的高电压。这导致第一线20和半导体晶片100之间的正电晕放电和第二线22与半导体晶片100之间的负电晕放电。 在停止电晕放电之后，将半导体晶片100加热至高温预定时间段，其中加热器120嵌入在支撑待处理晶片的载物台110中。

公开(公告)号：US4723068A

公开(公告)日：1988-02-02

申请号：US833082

申请日：1986-02-24

申请人： Tatsufumi Kusuda

发明人： Tatsufumi Kusuda

IPC分类号： G05F1/00 ,  G05D23/20 ,  H05B1/02

CPC分类号： G05D23/20 ,  G05D23/1912 ,  Y10T307/477

摘要： An electric power control device is composed of plural resistor loads (1.sub.0 -1.sub.4) the heat-generating powers of which are different from one another, switch means (3.sub.0 -3.sub.4) connected in series to each of the resistor loads and adapted for the ON-OFF control of an ac power (2), and means (4.sub.0 -4.sub.4) for ON-OFF controlling the switch means so as to turn on or turn off the ac power and also for selectively controlling the individual resistor loads so as to adjust the heat-generating powers of all of the resistor loads in accordance with their corresponding desired heat-generating powers.

摘要翻译： 电力控制装置由发热功率彼此不同的多个电阻负载（10-14）组成，开关装置（30-34）串联连接到每个电阻器负载并适于接通 交流电源（2）的-OFF控制和用于ON-OFF控制开关装置的装置（40-44），以便接通或关闭交流电力，并且还用于选择性地控制各个电阻器负载，以便调整 所有电阻负载的发热功率根据其相应的期望的发热功率。