公开(公告)号：US12209305B2

公开(公告)日：2025-01-28

申请号：US17666903

申请日：2022-02-08

Applicant: ASM IP Holding B.V.

Inventor： Miika Mattinen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/08

Abstract: The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

公开(公告)号：US20240368763A1

公开(公告)日：2024-11-07

申请号：US18773858

申请日：2024-07-16

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44 ,  H01L21/285

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US20240279800A1

公开(公告)日：2024-08-22

申请号：US18438765

申请日：2024-02-12

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Paloma Ruiz Y Kärkkäinen ,  Mikko Ritala ,  Anton Vihervaara ,  Matti Putkonen

IPC: C23C16/32 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45553

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal carbide-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal carbide-containing material on the substrate. The second precursor comprises a cyclic diene compound comprising a substituent comprising metalloid.

公开(公告)号：US12065739B2

公开(公告)日：2024-08-20

申请号：US17822686

申请日：2022-08-26

Applicant: ASM IP Holding, B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44 ,  H01L21/285

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/4408 ,  C23C16/45527 ,  H01L21/28506

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US11814715B2

公开(公告)日：2023-11-14

申请号：US17891851

申请日：2022-08-19

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18 ,  H10N50/85 ,  H10N60/85

CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/18 ,  H10N50/85 ,  H10N60/85

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20230265035A1

公开(公告)日：2023-08-24

申请号：US18309072

申请日：2023-04-28

Applicant: ASM IP HOLDING B.V.

Inventor： Timo Hatanpää ,  Miika Mattinen ,  Mikko Ritala ,  Markku Leskelä

IPC: C07C49/92 ,  C07C45/77 ,  C23C16/30 ,  C23C16/455

CPC classification number: C07C49/92 ,  C07C45/77 ,  C23C16/305 ,  C23C16/45553

Abstract: Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.

公开(公告)号：US20230175132A1

公开(公告)日：2023-06-08

申请号：US18052142

申请日：2022-11-02

Applicant: ASM IP HOLDING B.V.

Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/06 ,  C23C16/45527

Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

公开(公告)号：US20230063199A1

公开(公告)日：2023-03-02

申请号：US17822686

申请日：2022-08-26

Applicant: ASM IP Holding, B.V.

Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/44

Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.

公开(公告)号：US11542600B2

公开(公告)日：2023-01-03

申请号：US17173467

申请日：2021-02-11

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/30 ,  H01L21/02 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US11492703B2

公开(公告)日：2022-11-08

申请号：US17254111

申请日：2019-06-21

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/455 ,  C23C16/08 ,  H01L39/12 ,  H01L43/10

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system tor forming the material are also disclosed.