公开(公告)号：US20080076211A1

公开(公告)日：2008-03-27

申请号：US11904859

申请日：2007-09-27

Applicant: Fabrice Casset ,  Cedric Durand ,  Pascal Ancey

Inventor： Fabrice Casset ,  Cedric Durand ,  Pascal Ancey

IPC: H01L21/56

CPC classification number: B81C1/0065 ,  B81B2201/0271 ,  B81B2207/015 ,  H03H3/0073 ,  H03H9/1057 ,  H03H9/2405 ,  H03H2009/02496

Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

Abstract translation: 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤：基底的形成，其包括由两个绝缘区域部分覆盖的一个硅区域，通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层，形成 通过外延的强掺杂硅层，包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域，同时形成振动结构和致动电极，通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间，通过选择性蚀刻消除所述牺牲硅和锗合金层。

公开(公告)号：US07310029B2

公开(公告)日：2007-12-18

申请号：US10883690

申请日：2004-07-06

Applicant: Philippe Robert ,  Pascal Ancey ,  Grégory Caruyer

Inventor： Philippe Robert ,  Pascal Ancey ,  Grégory Caruyer

IPC: H03H9/15 ,  H03H9/54

CPC classification number: H03H9/173 ,  H03H3/04 ,  H03H9/175 ,  H03H2009/02181 ,  Y10T29/42

Abstract: The resonator comprises a piezoelectric layer arranged between two electrodes. An electrical heating resistor is arranged in thermal contact with at least one of the electrodes. Temporary heating of the electrode enables the material constituting the electrode to be partially evaporated, so as to thin the electrode and thus adjust the resonance frequency. Measurement of the resonance frequency in the course of evaporation enables the heating to be interrupted when the required resonance frequency is obtained. One of the electrodes can be arranged on a substrate formed by an acoustic Bragg grating. The resonator can comprise a substrate comprising a cavity whereon one of the electrodes is at least partially arranged.

Abstract translation: 谐振器包括布置在两个电极之间的压电层。 电加热电阻器布置成与至少一个电极热接触。 电极的暂时加热使得构成电极的材料部分蒸发，从而使电极变薄，从而调节谐振频率。 在蒸发过程中谐振频率的测量使得当获得所需的共振频率时能够中断加热。 一个电极可以布置在由声布拉格光栅形成的基板上。 谐振器可以包括基底，其包括其中一个电极至少部分地布置的空腔。

公开(公告)号：US07179392B2

公开(公告)日：2007-02-20

申请号：US10794527

申请日：2004-03-05

Applicant: Philippe Robert ,  Grégory Caruyer ,  Pascal Ancey ,  Guillaume Bouche

Inventor： Philippe Robert ,  Grégory Caruyer ,  Pascal Ancey ,  Guillaume Bouche

IPC: H01L41/08

CPC classification number: H03H9/173 ,  H03H3/04 ,  H03H2003/0414 ,  Y10T29/42

Abstract: A process for manufacturing a resonator including the steps of: forming on an insulating substrate a first portion of a conductive material and a second portion of another material on the first portion; forming an insulating layer having its upper surface flush with the upper part of the second portion; forming by a succession of depositions and etchings a beam of a conductive material above the second portion, the beam ends being on the insulating layer on either side of the second portion, the upper surface of the second portion being exposed on either side of the beam, a third portion of a piezoelectric material on the beam and a fourth portion of a conductive material on the third portion above the beam portion located above the second portion; and removing the second portion.

Abstract translation: 一种用于制造谐振器的方法，包括以下步骤：在绝缘基板上形成第一部分上的导电材料的第一部分和另一材料的第二部分; 形成其上表面与所述第二部分的上部齐平的绝缘层; 通过一系列沉积和蚀刻形成第二部分上方的导电材料束，光束端在第二部分的任一侧上的绝缘层上，第二部分的上表面暴露在光束的任一侧上 ，所述梁上的压电材料的第三部分和位于所述第二部分上方的所述梁部分上方的所述第三部分上的导电材料的第四部分; 并移除第二部分。

公开(公告)号：US20060226736A1

公开(公告)日：2006-10-12

申请号：US10537283

申请日：2003-11-27

Applicant: Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

Inventor： Guillaume Bouche ,  Gregory Caruyer ,  Pascal Ancey

IPC: H01L41/053

CPC classification number: H03H9/175

Abstract: A support 7 for an acoustic resonator 4 includes at least one bilayer assembly having a layer of high acoustic impedance material 11 and a layer of low acoustic impedance material 12 made of material having a low electrical permittivity.

Abstract translation: 用于声共振器4的支撑件7包括具有高声阻抗材料层11的至少一个双层组件和由具有低电容率的材料制成的低声阻抗材料层12。

公开(公告)号：US20050028336A1

公开(公告)日：2005-02-10

申请号：US10883690

申请日：2004-07-06

Applicant: Philippe Robert ,  Pascal Ancey ,  Gregory Caruyer

Inventor： Philippe Robert ,  Pascal Ancey ,  Gregory Caruyer

IPC: H03H3/04 ,  H03H9/17 ,  H04R17/00 ,  H04R25/00

CPC classification number: H03H9/173 ,  H03H3/04 ,  H03H9/175 ,  H03H2009/02181 ,  Y10T29/42

Abstract: The resonator comprises a piezoelectric layer arranged between two electrodes. An electrical heating resistor is arranged in thermal contact with at least one of the electrodes. Temporary heating of the electrode enables the material constituting the electrode to be partially evaporated, so as to thin the electrode and thus adjust the resonance frequency. Measurement of the resonance frequency in the course of evaporation enables the heating to be interrupted when the required resonance frequency is obtained. One of the electrodes can be arranged on a substrate formed by an acoustic Bragg grating. The resonator can comprise a substrate comprising a cavity whereon one of the electrodes is at least partially arranged.

Abstract translation: 谐振器包括布置在两个电极之间的压电层。 电加热电阻器布置成与至少一个电极热接触。 电极的暂时加热使得构成电极的材料部分蒸发，从而使电极变薄，从而调节谐振频率。 在蒸发过程中谐振频率的测量使得当获得所需的共振频率时能够中断加热。 一个电极可以布置在由声布拉格光栅形成的基板上。 谐振器可以包括基底，其包括其中一个电极至少部分地布置的空腔。

公开(公告)号：US5568977A

公开(公告)日：1996-10-29

申请号：US191048

申请日：1994-02-03

Applicant: Michel Gschwind ,  Pascal Ancey

Inventor： Michel Gschwind ,  Pascal Ancey

IPC: G01N25/66 ,  G01N25/68 ,  G01W1/10 ,  G01N25/12

CPC classification number: G01N25/68

Abstract: A process is disclosed to detect a water condensation risk on a surface in contact with a wet air volume, which uses the steps of (a) placing a sensitive element on the surface, which initially takes a temperature corresponding to that of the surface, (b) by means of a heating device on this sensitive element, initiating a first heating phase until a temperature higher than the surface temperature is reached, (c) by means of a cooling device having the same thermal power as the heating device, initiating a cooling phase until a temperature lower than the surface temperature is provoked on the sensitive element, and (d) a comparison is made between the ratio of the first heating phase time to the temperature rise during heating and the ratio of cooling phase time to the temperature decrease during the cooling, a noticeable difference between these two ratios indicating a significant risk of condensation on the surface.

Abstract translation: 公开了一种用于检测与湿空气体积接触的表面上的水冷凝风险的方法，其使用以下步骤：（a）将敏感元件放置在表面上，其最初采取与表面相对应的温度（ b）通过该敏感元件上的加热装置，启动第一加热阶段，直到达到高于表面温度的温度，（c）通过具有与加热装置相同的热功率的冷却装置， 冷却相直到在敏感元件上引起低于表面温度的温度，并且（d）比较第一加热相时间与加热期间的温度升高的比率以及冷却相时间与温度的比率 在冷却期间减少，这两个比率之间的显着差异表明在表面上有明显的冷凝风险。

公开(公告)号：US5462608A

公开(公告)日：1995-10-31

申请号：US222267

申请日：1994-04-04

Applicant: Michel Gschwind ,  Pascal Ancey

Inventor： Michel Gschwind ,  Pascal Ancey

IPC: G01N25/66 ,  G01N25/68 ,  H01L35/08 ,  H01L35/22 ,  H01L35/10 ,  H01L35/32

CPC classification number: H01L35/08 ,  G01N25/68 ,  H01L35/22

Abstract: A Peltier effect device which detects in particular a condensation risk, includes a substrate and semiconducting bands disposed on the upper face of the substrate. The junctions connecting said bands which make up a series circuit are formed by semiconducting bands of N-type and P-type. Junctions of the same type, i.e., N-P type are situated on the central zone of the upper face of the substrate and defines a detection zone of the device. Semiconducting bands of one type are placed on one side of the upper face of the substrate and bands of the other type are placed on the other side of the upper face of the substrate. The substrate also includes at the peripheral zone of each band, except for a frontmost N-type band and a rearmost P-type band, a plated hole extending through the substrate to a lower face of the substrate and to a plating of the lower face such that a plated hole situated at an end of the P-type band is connected to a plated hole situated at an end of a next N-type band.

Abstract translation: 一种特别检测凝结风险的珀尔帖效应装置，包括设置在基板的上表面上的基板和半导体带。 连接构成串联电路的所述频带的接点由N型和P型的半导体带形成。 相同类型的接头，即N-P型位于衬底的上表面的中心区域上，并且限定了该设备的检测区域。 一种类型的半导体带放置在衬底的上表面的一侧上，另一种类型的带放置在衬底的上表面的另一侧上。 基板还包括在每个带的周边区域，除了最前面的N型带和最后面的P型带之外，延伸穿过基板的电镀孔到基板的下表面和下表面 使得位于P型带的端部的电镀孔连接到位于下一个N型带的端部的电镀孔。