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    Method of predicting the formation of water condensation
    1.
    发明授权
    Method of predicting the formation of water condensation 失效
    预测水凝结形成的方法

    公开(公告)号：US5741067A

    公开(公告)日：1998-04-21

    申请号：US620532

    申请日：1996-03-25

    Applicant: Michel Gschwind ,  Pascal Ancey

    Inventor： Michel Gschwind ,  Pascal Ancey

    IPC: G01N27/12 ,  G01N25/68 ,  G01N27/00 ,  G01N25/12

    CPC classification number: G01N25/68

    Abstract: A method of predicting the formation of water condensation on a surface in contact with humid air includes the steps of placing on the surface an element that adopts initially a temperature approximately equal to a temperature of the surface. The element is thermally cycled. Each cycle includes a cooling phase and a heating phase. The cooling phase includes first and second steps. Electric current is supplied to a cooling mechanism in the first step of the cooling phase to decrease the temperature of the element to below the temperature of the surface. An electric current is supplied to the cooling mechanism in the second step of the cooling phase to further decrease the temperature of the element. The current of the first step is greater than the current of the second step, such that the temperature of the element decreases more rapidly in the first step than in the second step. The formation of water condensation on the surface is predicted based upon the formation of water condensation on the element.

    Abstract translation: 预测与潮湿空气接触的表面上的水冷凝形成的方法包括以下步骤：在表面上放置初始温度大约等于表面温度的元件。 元件热循环。 每个循环包括冷却阶段和加热阶段。 冷却阶段包括第一和第二步骤。 在冷却阶段的第一步骤中，向冷却机构供给电流，将元件的温度降低至表面温度以下。 在冷却阶段的第二步骤中，向冷却机构供给电流，进一步降低元件的温度。 第一步骤的电流大于第二步骤的电流，使得元件的温度在第一步骤中比在第二步骤中更快地降低。 基于在元件上形成水凝结来预测表面上的水凝结的形成。

    Process and device to detect a risk of water condensation on a surface being in contact with a wet air volume
    2.
    发明授权
    Process and device to detect a risk of water condensation on a surface being in contact with a wet air volume 失效
    检测与湿气体积接触的表面上水凝结的风险的方法和装置

    公开(公告)号：US5568977A

    公开(公告)日：1996-10-29

    申请号：US191048

    申请日：1994-02-03

    Applicant: Michel Gschwind ,  Pascal Ancey

    Inventor： Michel Gschwind ,  Pascal Ancey

    IPC: G01N25/66 ,  G01N25/68 ,  G01W1/10 ,  G01N25/12

    CPC classification number: G01N25/68

    Abstract: A process is disclosed to detect a water condensation risk on a surface in contact with a wet air volume, which uses the steps of (a) placing a sensitive element on the surface, which initially takes a temperature corresponding to that of the surface, (b) by means of a heating device on this sensitive element, initiating a first heating phase until a temperature higher than the surface temperature is reached, (c) by means of a cooling device having the same thermal power as the heating device, initiating a cooling phase until a temperature lower than the surface temperature is provoked on the sensitive element, and (d) a comparison is made between the ratio of the first heating phase time to the temperature rise during heating and the ratio of cooling phase time to the temperature decrease during the cooling, a noticeable difference between these two ratios indicating a significant risk of condensation on the surface.

    Abstract translation: 公开了一种用于检测与湿空气体积接触的表面上的水冷凝风险的方法，其使用以下步骤：（a）将敏感元件放置在表面上，其最初采取与表面相对应的温度（ b）通过该敏感元件上的加热装置，启动第一加热阶段，直到达到高于表面温度的温度，（c）通过具有与加热装置相同的热功率的冷却装置， 冷却相直到在敏感元件上引起低于表面温度的温度，并且（d）比较第一加热相时间与加热期间的温度升高的比率以及冷却相时间与温度的比率 在冷却期间减少，这两个比率之间的显着差异表明在表面上有明显的冷凝风险。

    Peltier effect device to detect in particular a condensation risk on a surface being in contact with a wet air volume
    3.
    发明授权
    Peltier effect device to detect in particular a condensation risk on a surface being in contact with a wet air volume 失效
    珀耳帖效应装置特别检测与湿气体积接触的表面上的冷凝风险

    公开(公告)号：US5462608A

    公开(公告)日：1995-10-31

    申请号：US222267

    申请日：1994-04-04

    Applicant: Michel Gschwind ,  Pascal Ancey

    Inventor： Michel Gschwind ,  Pascal Ancey

    IPC: G01N25/66 ,  G01N25/68 ,  H01L35/08 ,  H01L35/22 ,  H01L35/10 ,  H01L35/32

    CPC classification number: H01L35/08 ,  G01N25/68 ,  H01L35/22

    Abstract: A Peltier effect device which detects in particular a condensation risk, includes a substrate and semiconducting bands disposed on the upper face of the substrate. The junctions connecting said bands which make up a series circuit are formed by semiconducting bands of N-type and P-type. Junctions of the same type, i.e., N-P type are situated on the central zone of the upper face of the substrate and defines a detection zone of the device. Semiconducting bands of one type are placed on one side of the upper face of the substrate and bands of the other type are placed on the other side of the upper face of the substrate. The substrate also includes at the peripheral zone of each band, except for a frontmost N-type band and a rearmost P-type band, a plated hole extending through the substrate to a lower face of the substrate and to a plating of the lower face such that a plated hole situated at an end of the P-type band is connected to a plated hole situated at an end of a next N-type band.

    Abstract translation: 一种特别检测凝结风险的珀尔帖效应装置，包括设置在基板的上表面上的基板和半导体带。 连接构成串联电路的所述频带的接点由N型和P型的半导体带形成。 相同类型的接头，即N-P型位于衬底的上表面的中心区域上，并且限定了该设备的检测区域。 一种类型的半导体带放置在衬底的上表面的一侧上，另一种类型的带放置在衬底的上表面的另一侧上。 基板还包括在每个带的周边区域，除了最前面的N型带和最后面的P型带之外，延伸穿过基板的电镀孔到基板的下表面和下表面 使得位于P型带的端部的电镀孔连接到位于下一个N型带的端部的电镀孔。

    Method for forming a variable capacitor
    4.
    发明授权
    Method for forming a variable capacitor 有权
    形成可变电容器的方法

    公开(公告)号：US07565725B2

    公开(公告)日：2009-07-28

    申请号：US11512731

    申请日：2006-08-30

    Applicant: Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

    Inventor： Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

    IPC: H01G7/00

    CPC classification number: H01G5/16 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T83/0476 ,  Y10T83/0505 ,  Y10T83/051 ,  Y10T83/0577

    Abstract: A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

    Abstract translation: 一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。

    Method for making an electromechanical component on a plane substrate
    5.
    发明授权
    Method for making an electromechanical component on a plane substrate 有权
    在平面基板上制造机电部件的方法

    公开(公告)号：US07625772B2

    公开(公告)日：2009-12-01

    申请号：US11904859

    申请日：2007-09-27

    Applicant: Fabrice Casset ,  Cedric Durand ,  Pascal Ancey

    Inventor： Fabrice Casset ,  Cedric Durand ,  Pascal Ancey

    IPC: H01L21/00

    CPC classification number: B81C1/0065 ,  B81B2201/0271 ,  B81B2207/015 ,  H03H3/0073 ,  H03H9/1057 ,  H03H9/2405 ,  H03H2009/02496

    Abstract: Method for making an electromechanical component on a plane substrate and comprising at least one structure vibrating in the plane of the substrate and actuation electrodes. The method comprises at least the following steps in sequence: formation of the substrate comprising one silicon area partly covered by two insulating areas, formation of a sacrificial silicon and germanium alloy layer by selective epitaxy starting from the uncovered part of the silicon area, formation of a strongly doped silicon layer by epitaxy, comprising a monocrystalline area arranged on said sacrificial layer and two polycrystalline areas arranged on insulating areas, simultaneous formation of the vibrating structure and actuation electrodes, by etching of a predetermined pattern in the monocrystalline area designed to form spaces between the electrodes and the vibrating structure, elimination of said sacrificial silicon and germanium alloy layer by selective etching.

    Abstract translation: 一种用于在平面基板上制造机电部件并且包括在所述基板和致动电极的平面中振动的至少一个结构的方法。 该方法至少包括以下步骤：基底的形成，其包括由两个绝缘区域部分覆盖的一个硅区域，通过从硅区域的未覆盖部分开始的选择性外延形成牺牲硅和锗合金层，形成 通过外延的强掺杂硅层，包括布置在所述牺牲层上的单晶区域和布置在绝缘区域上的两个多晶区域，同时形成振动结构和致动电极，通过在设计成形成空间的单晶区域中蚀刻预定图案 在电极和振动结构之间，通过选择性蚀刻消除所述牺牲硅和锗合金层。

    MOS transistor with a deformable gate
    9.
    发明授权
    MOS transistor with a deformable gate 有权
    具有可变形栅极的MOS晶体管

    公开(公告)号：US07304358B2

    公开(公告)日：2007-12-04

    申请号：US11227624

    申请日：2005-09-15

    Applicant: Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    Inventor： Pascal Ancey ,  Nicolas Abele ,  Fabrice Casset

    IPC: H01L29/84

    CPC classification number: G01P15/124 ,  B81B3/0035 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0109 ,  G01L1/005 ,  G01L9/0098 ,  H03B5/12 ,  H03B5/1237 ,  H03B5/30

    Abstract: A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain and in a second direction perpendicular to the first one, a conductive gate beam placed at least above the channel area extending in the second direction between bearing points placed on the substrate on each side of the channel area, and such that the surface of the channel area is hollow and has a shape similar to that of the gate beam when said beam is in maximum deflection towards the channel area.

    Abstract translation: 一种MOS晶体管，其具有形成在半导体衬底中的可变形栅极，包括源极和漏极区域，所述源极区域和漏极区域由沿着从源极到漏极的第一方向延伸的沟道区域和与第一方向垂直的第二方向分开， 至少在所述通道区域上方，在所述通道区域的每一侧上放置在所述基板上的支承点之间沿所述第二方向延伸，并且使得所述通道区域的表面是中空的，并且具有与所述栅极梁的形状类似的形状 光束朝向通道区域的最大偏转。

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