Abstract:
A method of connecting to a first metal layer in a semiconductor flow process. Disclosed embodiments connect to the first metal layer by etching a first portion of a viahole through an etch stop layer and a gate insulation layer to reach a first metal layer, depositing a second metal layer such that the second metal layer contacts the first metal layer within the viahole, and etching a second portion of the viahole through a first passivation layer and an organic layer to reach the second metal layer.
Abstract:
A flexible display having an array of pixels or sub-pixels is provided. The display includes a flexible substrate and an array of thin film transistors (TFTs) corresponding to the array of pixels or sub-pixels on the substrate. The display also includes a first plurality of metal lines coupled to gate electrodes of the TFTs and a second plurality of metal lines coupled to source electrodes and drain electrodes of the TFTs. At least one of the first plurality of metal lines and the second plurality of metal lines comprises a non-stretchable portion in the TFT areas and a stretchable portion outside the TFT areas.
Abstract:
Devices and methods for increasing the aperture ratio and providing more precise gray level control to pixels in an active matrix organic light emitting diode (AMOLED) display are provided. By way of example, one embodiment includes disposing a gate insulator and an interlayer dielectric material between a gate electrode of a thin-film transistor of a driving circuit and a channel of the thin-film transistor. The improved structure of the driving circuit facilitates a higher voltage range for controlling the gray level of the pixels, and may increase the aperture ratio of the pixels.
Abstract:
A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose.
Abstract:
An electronic device may be provided with a display mounted in a housing. The display may include a color filter layer, a liquid crystal layer, and a thin-film transistor layer. The color filter layer may form the outermost layer of the display. A color filter layer substrate in the color filter layer may have opposing inner and outer surfaces. A layer of patterned metal on the inner surface may form metal alignment marks. The metal alignment marks may include alignment marks for color filter elements, alignment marks for a black matrix layer that is formed on top of the color filter elements, and post spacer alignment marks. The layer of patterned metal may also form structures such as logo structures that are visible on the outer surface in an inactive border region of the display.
Abstract:
A transistor that may be used in electronic displays to selectively activate one or more pixels. The transistor includes a metal layer, a silicon layer deposited on at least a portion of the metal layer, the silicon layer includes an extension portion that extends a distance past the metal layer, and at least three lightly doped regions positioned in the silicon layer. The at least three lightly doped regions have a lower concentration of doping atoms than other portions of the silicon layer forming the transistor.
Abstract:
Displays with integrated touch sensing circuitry are provided. An integrated touch screen can include multi-function circuit elements that form part of the display circuitry of the display system that generates an image on the display, and also form part of the touch sensing circuitry of a touch sensing system that senses one or more touches on or near the display. The multi-function circuit elements can be, for example, capacitors in display pixels of an LCD that are configured to operate as display circuitry in the display system, and that may also be configured to operate as touch circuitry of the touch sensing system. For example, one or more circuit elements of the display pixel stackup can form a conductive portion of the touch sensing system, such as a charge collector, which can be operated with switches and conductive lines to sense touch.
Abstract:
A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
Abstract:
A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.
Abstract:
An organic light-emitting diode display may have thin-film transistor circuitry formed on a substrate. The display and substrate may have rounded corners. A pixel definition layer may be formed on the thin-film transistor circuitry. Openings in the pixel definition layer may be provided with emissive material overlapping respective anodes for organic light-emitting diodes. A cathode layer may cover the array of pixels. A ground power supply path may be used to distribute a ground voltage to the cathode layer. The ground power supply path may be formed from a metal layer that is shorted to the cathode layer using portions of a metal layer that forms anodes, may be formed from a mesh shaped metal pattern, may have L-shaped path segments, and may include laser-deposited metal on the cathode layer. Data lines may be formed from metal layers in the active area to accommodate the rounded corners of the display.