公开(公告)号：US20190261955A1

公开(公告)日：2019-08-29

申请号：US16404672

申请日：2019-05-06

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Nevada J. Sanchez ,  Susan A. Alie ,  Tyler S. Ralston ,  Jonathan M. Rothberg ,  Keith G. Fife ,  Joseph Lutsky

IPC: A61B8/08 ,  H04B11/00

Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

公开(公告)号：US20190261954A1

公开(公告)日：2019-08-29

申请号：US16404665

申请日：2019-05-06

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Nevada J. Sanchez ,  Susan A. Alie ,  Tyler S. Ralston ,  Jonathan M. Rothberg ,  Keith G. Fife ,  Joseph Lutsky

IPC: A61B8/08 ,  H04B11/00

Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application-specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

公开(公告)号：US10272471B2

公开(公告)日：2019-04-30

申请号：US15970987

申请日：2018-05-04

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Jaime Scott Zahorian ,  Kailiang Chen

IPC: B06B1/06 ,  B06B1/02 ,  B60B1/02

Abstract: Electrical biasing of ultrasonic transducers of an ultrasound device is described. The ultrasonic transducers may be capacitive micromachined ultrasonic transducers (CMUTs). The ultrasonic transducers may be grouped together, with the different groups receiving different bias voltages. The bias voltages for the various groups of ultrasonic transducers may be selected to account for differences between the groups.

公开(公告)号：US20190047850A1

公开(公告)日：2019-02-14

申请号：US16158999

申请日：2018-10-12

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Jaime Scott Zahorian

IPC: B81C1/00 ,  B06B1/02 ,  B06B1/06 ,  B81B7/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180353995A1

公开(公告)日：2018-12-13

申请号：US15970987

申请日：2018-05-04

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Jaime Scott Zahorian ,  Kailiang Chen

IPC: B06B1/02

CPC classification number: B06B1/02 ,  B06B1/0292

Abstract: Electrical biasing of ultrasonic transducers of an ultrasound device is described. The ultrasonic transducers may be capacitive micromachined ultrasonic transducers (CMUTs). The ultrasonic transducers may be grouped together, with the different groups receiving different bias voltages. The bias voltages for the various groups of ultrasonic transducers may be selected to account for differences between the groups.

公开(公告)号：US09987661B2

公开(公告)日：2018-06-05

申请号：US14957098

申请日：2015-12-02

Applicant: Butterfly Network, Inc.

Inventor： Susan A. Alie ,  Jaime Scott Zahorian ,  Kailiang Chen

IPC: B06B1/06 ,  B06B1/02

CPC classification number: B06B1/02 ,  B06B1/0292

Abstract: Electrical biasing of ultrasonic transducers of an ultrasound device is described. The ultrasonic transducers may be capacitive micromachined ultrasonic transducers (CMUTs). The ultrasonic transducers may be grouped together, with the different groups receiving different bias voltages. The bias voltages for the various groups of ultrasonic transducers may be selected to account for differences between the groups.

公开(公告)号：US09899371B2

公开(公告)日：2018-02-20

申请号：US15259243

申请日：2016-09-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/768 ,  H01L27/06 ,  B06B1/02 ,  B81B7/00 ,  H01L21/3213 ,  H01L21/56 ,  H01L21/8238 ,  H01L23/522 ,  H01L23/528 ,  A61B8/00 ,  H01L27/092

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US20170360414A1

公开(公告)日：2017-12-21

申请号：US15631729

申请日：2017-06-23

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Christopher Thomas McNulty ,  Jaime Scott Zahorian ,  Paul Francis Cristman ,  Matthew de Jonge ,  Keith G. Fife ,  David Elgena

IPC: A61B8/00 ,  A61B8/08

CPC classification number: A61B8/4477 ,  A61B8/0883 ,  A61B8/0891 ,  A61B8/12 ,  A61B8/4236 ,  A61B8/4427 ,  A61B8/4444 ,  A61B8/4472 ,  A61B8/4494 ,  A61B8/465 ,  A61B8/467 ,  A61B8/483 ,  A61B8/485 ,  A61B8/488 ,  A61B8/5207 ,  A61B8/54 ,  A61B8/56 ,  B06B1/0292 ,  B06B1/0622

Abstract: A system comprising a multi-modal ultrasound probe configured to operate in a plurality of operating modes associated with a respective plurality of configuration profiles; and a computing device coupled to the handheld multi-modal ultrasound probe and configured to, in response to receiving input indicating an operating mode selected by a user, cause the multi-modal ultrasound probe to operate in the selected operating mode.

公开(公告)号：US20170360413A1

公开(公告)日：2017-12-21

申请号：US15629666

申请日：2017-06-21

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Christopher Thomas McNulty ,  Jaime Scott Zahorian ,  Paul Francis Cristman ,  Matthew de Jonge ,  Keith G. Fife

IPC: A61B8/00 ,  A61B8/12 ,  B06B1/02

CPC classification number: A61B8/145 ,  A61B8/12 ,  A61B8/4236 ,  A61B8/4427 ,  A61B8/4444 ,  A61B8/4488 ,  A61B8/4494 ,  A61B8/465 ,  A61B8/467 ,  A61B8/54 ,  A61B8/56 ,  B06B1/0292 ,  B06B1/0622

Abstract: A universal ultrasound device having an ultrasound probe includes a semiconductor die; a plurality of ultrasonic transducers integrated on the semiconductor die, the plurality of ultrasonic transducers configured to operate a first mode associated with a first frequency range and a second mode associated with a second frequency range, wherein the first frequency range is at least partially non-overlapping with the second frequency range; and control circuitry configured to: control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the first frequency range, in response to receiving an indication to operate the ultrasound probe in the first mode; and control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the second frequency range, in response to receiving an indication to operate the ultrasound probe in the second mode.

公开(公告)号：US20160379973A1

公开(公告)日：2016-12-29

申请号：US15259243

申请日：2016-09-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L27/06 ,  H01L21/56 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  A61B8/00 ,  H01L27/092 ,  B06B1/02 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  H01L21/3213 ,  H01L23/528

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

Abstract translation: 还描述了形成在互补金属氧化物半导体（CMOS）晶片中的微加工超声换能器，以及制造这种器件的方法。 可以通过牺牲释放去除CMOS晶片的金属化层，以产生超声换能器的空腔。 剩余的层可以形成超声换能器的膜。