FULL-COLOR ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY WITH HYBRID
    41.
    发明申请
    FULL-COLOR ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY WITH HYBRID 有权
    全彩色有源矩阵有机发光显示与混合

    公开(公告)号:US20160163774A1

    公开(公告)日:2016-06-09

    申请号:US15009323

    申请日:2016-01-28

    IPC分类号: H01L27/32 H01L51/52

    摘要: A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

    摘要翻译: 全色AM OLED包括透明基板,位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板,其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板,滤色器和基板发光。 由每个OLED发射的光包括第一发射带,其波长在两种原色的范围内延伸,第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素,将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。

    Double self-aligned metal oxide TFT
    42.
    发明授权
    Double self-aligned metal oxide TFT 有权
    双自对准金属氧化物TFT

    公开(公告)号:US08435832B2

    公开(公告)日:2013-05-07

    申请号:US13406824

    申请日:2012-02-28

    IPC分类号: H01L21/00

    摘要: A method of fabricating MOTFTs on transparent substrates includes positioning opaque gate metal on the front surface of a transparent substrate and depositing transparent gate dielectric, transparent metal oxide semiconductor material, and passivation material on the gate metal and the surrounding area. Portions of the passivation material are exposed from the rear surface of the substrate. Exposed portions are removed to define a channel area overlying the gate area. A relatively thick conductive metal material is selectively deposited on the exposed areas of the semiconductor material to form thick metal source/drain contacts. The selective deposition includes either plating or printing and processing a metal paste.

    摘要翻译: 在透明基板上制造MOTFT的方法包括在透明基板的前表面上定位不透明栅极金属,并在栅极金属和周围区域上沉积透明栅极电介质,透明金属氧化物半导体材料和钝化材料。 钝化材料的一部分从基板的后表面露出。 去除暴露部分以限定覆盖栅极区域的沟道区域。 相对厚的导电金属材料被选择性地沉积在半导体材料的暴露区域上以形成厚的金属源极/漏极触点。 选择性沉积包括电镀或印刷和加工金属浆料。

    DOUBLE SELF-ALIGNED METAL OXIDE TFT
    43.
    发明申请
    DOUBLE SELF-ALIGNED METAL OXIDE TFT 有权
    双重自对准金属氧化物TFT

    公开(公告)号:US20120300147A1

    公开(公告)日:2012-11-29

    申请号:US13366503

    申请日:2012-02-06

    IPC分类号: G02F1/136

    摘要: A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

    摘要翻译: 在透明基板上制造金属氧化物TFT的方法包括以下步骤:在衬底的前表面上定位不透明栅极金属区域,沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层,沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂,在所述钝化材料上沉积光致抗蚀剂,曝光和显影所述光致抗蚀剂以去除暴露部分,蚀刻所述钝化材料以留下限定沟道区的钝化区,在所述钝化区上沉积透明导电材料, 导电材料,曝光和显影光致抗蚀剂以去除未曝光部分,并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

    ACTIVE MATRIX FOR DISPLAYS AND METHOD OF FABRICATION
    44.
    发明申请
    ACTIVE MATRIX FOR DISPLAYS AND METHOD OF FABRICATION 审中-公开
    显示器的主动矩阵和制造方法

    公开(公告)号:US20120182284A1

    公开(公告)日:2012-07-19

    申请号:US13006799

    申请日:2011-01-14

    IPC分类号: G06F3/038

    摘要: An active matrix incorporated in a color display device includes an array of pixels arranged in n rows and m columns, each pixel having x elements including at least a red, a green, and a blue element. A plurality of m data lines, a different one of the plurality of m data lines being coupled one each to each column of pixels and to each element in each pixel in the column of pixels. A plurality of xn scan lines is provided, the xn scan lines being divided into n groups of x scan lines each. A different group of three xn scan lines is coupled to each row of the n rows of pixels and each of the different x scan lines in each group is coupled to a different one of the x elements.

    摘要翻译: 结合在彩色显示装置中的有源矩阵包括排列成n行m列的像素阵列,每个像素具有至少包括红色,绿色和蓝色元素的x个元素。 多条m条数据线,多条m条数据线中的一条不同的一条线连接到每一列的像素,并与像素列的每个像素中的每一个元素相连。 提供多个xn个扫描线,xn条扫描线分为n组x条扫描线。 三个xn扫描线的不同组耦合到n行像素的每行,并且每组中的每个不同的x扫描线耦合到x个元素中的不同的x元素。

    Two-terminal switching devices and their methods of fabrication
    45.
    发明授权
    Two-terminal switching devices and their methods of fabrication 有权
    两端开关器件及其制造方法

    公开(公告)号:US08193594B2

    公开(公告)日:2012-06-05

    申请号:US13015013

    申请日:2011-01-27

    IPC分类号: H01L21/00 H01L47/00 H01L29/04

    摘要: Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

    摘要翻译: 提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。 这些器件可以用作有源矩阵显示器的驱动电路中的开关,例如在电泳,旋转元件和液晶显示器中。 开关器件包括两个电极和位于电极之间的宽带半导体材料层。 根据一个示例,阴极包括具有低功函数的金属,阳极包括具有p +或p ++类型的导电性的有机材料,并且宽带半导体包括金属氧化物。 阴极和阳极材料之间的功函数差异优选为至少约0.6eV。 可以实现在约15V的电压范围内的至少10,000的开/关电流比。 如果需要,可以在具有低熔点的柔性聚合物基材上形成装置。

    FULL-COLOR ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY WITH HYBRID
    46.
    发明申请
    FULL-COLOR ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY WITH HYBRID 有权
    全彩色有源矩阵有机发光显示与混合

    公开(公告)号:US20110309389A1

    公开(公告)日:2011-12-22

    申请号:US13170382

    申请日:2011-06-28

    IPC分类号: H01L33/08 H01L33/00

    摘要: A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

    摘要翻译: 全色AM OLED包括透明基板,位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板,其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板,滤色器和基板发光。 由每个OLED发射的光包括第一发射带,其波长在两种原色的范围内延伸,第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素,将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。

    DOUBLE SELF-ALIGNED METAL OXIDE TFT
    48.
    发明申请
    DOUBLE SELF-ALIGNED METAL OXIDE TFT 有权
    双重自对准金属氧化物TFT

    公开(公告)号:US20150102335A9

    公开(公告)日:2015-04-16

    申请号:US13366503

    申请日:2012-02-06

    摘要: A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

    摘要翻译: 在透明基板上制造金属氧化物TFT的方法包括以下步骤:在衬底的前表面上定位不透明栅极金属区域,沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层,沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂,在所述钝化材料上沉积光致抗蚀剂,曝光和显影所述光致抗蚀剂以去除暴露部分,蚀刻所述钝化材料以留下限定沟道区的钝化区,在所述钝化区上沉积透明导电材料, 导电材料,曝光和显影光致抗蚀剂以去除未曝光部分,并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

    Anodization of gate with laser vias and cuts
    49.
    发明授权
    Anodization of gate with laser vias and cuts 有权
    带激光通孔和切口的阳极氧化

    公开(公告)号:US08936973B1

    公开(公告)日:2015-01-20

    申请号:US14080143

    申请日:2013-11-14

    IPC分类号: H01L21/00 H01L29/49 H01L29/66

    摘要: A method of forming a gate dielectric in each MOTFT of an active matrix includes depositing a layer of gate metal on a substrate and patterning the gate metal to define a matrix of MOTFTs each including a gate electrode with all gate electrodes in each column connected together by a gate metal line and the line in each column connected at one end to the line in the next adjacent column by a gate metal bridging portion. The gate metal is anodized to form a layer of gate dielectric material. A layer of semiconductor metal oxide is deposited over the anodized gate metal and patterned to define an active layer for each MOTFT. Source/drain electrodes are formed on the layer of metal oxide for each MOTFT, and a laser is used to cut the bridging portion electrically connecting each gate metal line to the next adjacent gate metal line.

    摘要翻译: 在有源矩阵的每个MOTFT中形成栅极电介质的方法包括在衬底上沉积栅极金属层并且图案化栅极金属以形成MOTFT的矩阵,每个MOTFT包括栅极,每个栅极中的所有栅电极通过 栅极金属线,并且每列中的线在一端通过栅极金属桥接部分连接到下一相邻列中的线。 栅极金属被阳极化以形成栅极电介质材料层。 一层半导体金属氧化物沉积在阳极氧化的栅极金属上,并被图案化以限定每个MOTFT的有源层。 在每个MOTFT的金属氧化物层上形成源极/漏极,并且使用激光来切割将每个栅极金属线电连接到下一个相邻栅极金属线的桥接部分。

    Full-color active matrix organic light emitting display with hybrid
    50.
    发明授权
    Full-color active matrix organic light emitting display with hybrid 有权
    全彩有源矩阵有机发光显示器

    公开(公告)号:US08742658B2

    公开(公告)日:2014-06-03

    申请号:US13170382

    申请日:2011-06-28

    IPC分类号: H01J1/62 H01J63/04 H01J9/24

    摘要: A full-color AM OLED includes a transparent substrate, a color filter positioned on an upper surface of the substrate, and a metal oxide thin film transistor backpanel positioned in overlying relationship on the color filter and defining an array of pixels. An array of OLEDs is formed on the backpanel and positioned to emit light downwardly through the backpanel, the color filter, and the substrate in a full-color display. Light emitted by each OLED includes a first emission band with wavelengths extending across the range of two of the primary colors and a second emission band with wavelengths extending across the range of the remaining primary color. The color filter includes for each pixel, two zones separating the first emission band into two separate primary colors and a third zone passing the second emission band.

    摘要翻译: 全色AM OLED包括透明基板,位于基板的上表面上的滤色器和金属氧化物薄膜晶体管背板,其位于滤色器上并且限定像素阵列。 OLED阵列形成在背板上并且定位成以全色显示器向下通过背板,滤色器和基板发光。 由每个OLED发射的光包括第一发射带,其波长在两种原色的范围内延伸,第二发射带具有延伸超过剩余原色范围的波长。 滤色器包括每个像素,将第一发射带分成两个分开的原色的两个区和通过第二发射带的第三区。