公开(公告)号：US20110037082A1

公开(公告)日：2011-02-17

申请号：US12540523

申请日：2009-08-13

Applicant: Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

Inventor： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC: H01L33/00

CPC classification number: H05B33/0815 ,  H01L2224/16225 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H05B33/0842 ,  Y02B20/341 ,  H01L2924/00

Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Abstract translation: 发光二极管（LED）系统包括衬底，衬底上的专用集成电路（ASIC）以及与专用集成电路（ASIC）电连接的衬底上的至少一个发光二极管（LED）。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成系统。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：US20070166851A1

公开(公告)日：2007-07-19

申请号：US11618468

申请日：2006-12-29

Applicant: Chuong Tran ,  Trung Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

Inventor： Chuong Tran ,  Trung Doan ,  Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan

IPC: H01L33/00 ,  H01L29/24 ,  H01L21/00

CPC classification number: H01L33/22 ,  H01L33/0095

Abstract: Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

Abstract translation: 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

公开(公告)号：US08933467B2

公开(公告)日：2015-01-13

申请号：US13309718

申请日：2011-12-02

Applicant: Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

Inventor： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC: H01L31/12 ,  H01L25/16

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Abstract translation: 发光二极管（LED）系统包括衬底，专用集成电路（ASIC）和至少一个发光二极管（LED），其包括III族氮化物基材料，例如GaN，InGaN，AlGaN，AlInGaN或 其他（Ga，In或Al）N基材料。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成LED电路。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：USD687395S1

公开(公告)日：2013-08-06

申请号：US29418741

申请日：2012-04-20

Applicant: Chen-Fu Chu

Designer： Chen-Fu Chu

公开(公告)号：USD684548S1

公开(公告)日：2013-06-18

申请号：US29418453

申请日：2012-04-17

Applicant: Chen-Fu Chu

Designer： Chen-Fu Chu

公开(公告)号：US08384088B2

公开(公告)日：2013-02-26

申请号：US12939984

申请日：2010-11-04

Applicant: Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

Inventor： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

IPC: H01L33/32

CPC classification number: H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.

Abstract translation: 本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层 以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

公开(公告)号：US08283652B2

公开(公告)日：2012-10-09

申请号：US12845007

申请日：2010-07-28

Applicant: Chen-Fu Chu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Trung Tri Doan

Inventor： Chen-Fu Chu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Trung Tri Doan

IPC: H01L33/04

CPC classification number: H01L33/38 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/641 ,  H01L33/647

Abstract: A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer. The vertical light emitting diode (VLED) die can also include a passivation layer formed on the metal base surrounding and electrically insulating the electrode frame, the edges of the mirror, the edges of the p-type semiconductor layer, the edges of the multiple quantum well (MQW) layer and the edges of the n-type semiconductor layer.

Abstract translation: 垂直发光二极管（VLED）模具包括金属基底; 金属底座上的镜子; 反射层上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。 垂直发光二极管（VLED）裸片还包括在n型半导体层上的电极和电极框架，以及包含在电极框架内的有机或无机材料。 电极和电极框架被配置为提供高电流容量并且将电流从外周延伸到n型半导体层的中心。 垂直发光二极管（VLED）裸片还可以包括形成在金属基底上的钝化层，该钝化层围绕并电绝缘电极框架，反射镜的边缘，p型半导体层的边缘，多个量子的边缘 （MQW）层和n型半导体层的边缘。

公开(公告)号：US20120091466A1

公开(公告)日：2012-04-19

申请号：US13309718

申请日：2011-12-02

Applicant: Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

Inventor： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC: H01L33/08 ,  H01L33/32

CPC classification number: H01L25/167 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Abstract translation: 发光二极管（LED）系统包括衬底，专用集成电路（ASIC）和至少一个发光二极管（LED），其包括III族氮化物基材料，例如GaN，InGaN，AlGaN，AlInGaN或 其他（Ga，In或Al）N基材料。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成LED电路。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：US20110217799A1

公开(公告)日：2011-09-08

申请号：US13109687

申请日：2011-05-17

Applicant: Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

Inventor： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

IPC: H01L21/786

CPC classification number: H01L33/0079 ,  H01L33/0095

Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

Abstract translation: 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

公开(公告)号：US20070231963A1

公开(公告)日：2007-10-04

申请号：US11758475

申请日：2007-06-05

Applicant: Trung Doan ,  Chen-Fu Chu

Inventor： Trung Doan ,  Chen-Fu Chu

IPC: H01L21/00

CPC classification number: H01L33/0079

Abstract: Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.

Abstract translation: 用于制造发光二极管的系统和方法包括在载体衬底上形成多层外延结构; 在所述多层外延结构上沉积至少一个金属层; 去除载体衬底。