公开(公告)号：US08552458B2

公开(公告)日：2013-10-08

申请号：US12824163

申请日：2010-06-26

申请人： Trung Tri Doan ,  Chen-Fu Chu ,  Wen-Huang Liu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Fu-Hsien Wang

发明人： Trung Tri Doan ,  Chen-Fu Chu ,  Wen-Huang Liu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Fu-Hsien Wang

IPC分类号： H01L33/02

CPC分类号： H01L33/62 ,  H01L33/641 ,  H01L2224/73265 ,  H01L2933/0066

摘要： A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode. A method for fabricating the light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect.

摘要翻译： 发光二极管包括具有至少一个电隔离层的导热基板，该隔离层被配置为提供垂直电隔离和从基板的前侧（第一侧）到其后侧（第二侧）穿过基板的热传递路径。 发光二极管包括具有贯通互连的阳极和在基板上并排布置的具有通孔互连的阴极。 发光二极管还包括安装在阳极和阴极之间的衬底上的LED芯片。 一种制造发光二极管的方法包括以下步骤：提供具有电隔离层的导热衬底，在衬底的第一侧经由衬底并排形成阳极通孔和阴极，形成阳极 通过在阴极通孔中通过互连在阳极通孔和阴极之间的互连，通过互连将互连和阴极通过互连将衬底从衬底的第二侧延伸到阳极，并将LED芯片安装到与第一侧电连通的第一侧 阴极通过互连和阳极通过互连。

公开(公告)号：US07524686B2

公开(公告)日：2009-04-28

申请号：US11690443

申请日：2007-03-23

申请人： Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

发明人： Chen-Fu Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

IPC分类号： H01L21/66

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/20

摘要： Methods are provided for fabricating a semiconductor light-emitting diode (LED) device by providing an LED wafer assembly having an LED stack and selectively roughening and/or texturing a light-emitting surface of the LED stack's n-doped layer. In this manner, light extraction from the LED device is improved.

摘要翻译： 提供了通过提供具有LED堆叠的LED晶片组件并选择性地使LED堆叠的n掺杂层的发光表面粗糙化和/或纹理化来制造半导体发光二极管（LED）器件的方法。 以这种方式，提高了从LED装置的光提取。

公开(公告)号：US20120074384A1

公开(公告)日：2012-03-29

申请号：US13310552

申请日：2011-12-02

申请人： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

发明人： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

IPC分类号： H01L33/06

CPC分类号： H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US20110108851A1

公开(公告)日：2011-05-12

申请号：US12939984

申请日：2010-11-04

申请人： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

发明人： Chen-Fu Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng

IPC分类号： H01L33/32 ,  H01L33/62

CPC分类号： H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.

摘要翻译： 本发明涉及一种具有向外设置的电极的垂直发光二极管（VLED），垂直发光二极管包括导电基底，形成在导电基底上的半导体外延结构，形成在半导体外延结构周边的钝化层 以及形成在钝化层上并与半导体外延结构的上表面的边缘接触的导电框架，使得导电框架电连接到半导体外延结构。

公开(公告)号：US20080035950A1

公开(公告)日：2008-02-14

申请号：US11761897

申请日：2007-06-12

申请人： CHEN-FU CHU ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Doan

发明人： CHEN-FU CHU ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Doan

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L31/00

CPC分类号： H01L33/0079

摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

摘要翻译： 提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。 可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。 这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

公开(公告)号：US20140339496A1

公开(公告)日：2014-11-20

申请号：US13895421

申请日：2013-05-16

申请人： Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

发明人： Chen-FU Chu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng ,  David Trung Doan ,  Yang Po Wen

IPC分类号： H01L33/22 ,  H01L33/06

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/06 ,  H01L2924/12041

摘要： A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances.

摘要翻译： 垂直发光二极管（VLED）裸片包括具有第一类型限制层的外延结构，在被配置为发光的多量子阱（MQW）上的第一类型限制层上的有源层和第二类型限制层 约束层具有粗糙表面。 在第一实施例中，粗糙表面包括在其主表面上具有深度（d）的孔的图案，其由主表面上的高度（h）的突起图案包围。 在第二实施例中，粗糙表面包括由二次突起图案包围的一次隆起图案。

公开(公告)号：US20140151630A1

公开(公告)日：2014-06-05

申请号：US13693199

申请日：2012-12-04

申请人： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

发明人： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

IPC分类号： H01L33/04

CPC分类号： H01L33/0079 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0217 ,  H01S5/18375 ,  H01S5/34333

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US08685764B2

公开(公告)日：2014-04-01

申请号：US11761897

申请日：2007-06-12

申请人： Chen-Fu Chu ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Tri Doan

发明人： Chen-Fu Chu ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Tri Doan

IPC分类号： H01L33/00

CPC分类号： H01L33/0079

摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

摘要翻译： 提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。 可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。 这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

公开(公告)号：US08614449B1

公开(公告)日：2013-12-24

申请号：US11548620

申请日：2006-10-11

申请人： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

发明人： Feng-Hsu Fan ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jui-Kang Yen

IPC分类号： H01L27/15

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。 相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US08143112B1

公开(公告)日：2012-03-27

申请号：US12696965

申请日：2010-01-29

申请人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Trung Tri Doan ,  Chuong Anh Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。