摘要:
A heat dissipating apparatus (10) includes a base (20), a plurality of stacked fins (30), and at least a heat pipe (40). The base absorbs heat from a heat-generating component. Each of the fins includes a main body (32), and a plurality of projection members (33) extending from the main body. The projection members of a first fin connect the projection members of a second fin. The projection members form a first heat transfer path for transferring heat from the base to the fins. The heat pipe includes a heat-absorbing portion (42) thermally contacting with the base, and a heat-dissipating portion (44) contacting with the fins. The heat pipe forms a second heat transfer path for transferring the heat from the base toward the fins.
摘要:
Eyeglasses includes a lens frame, two temples and two connecters for connecting the lens frame with the temples. The lens frame has a slot in each of two side ends to fit firmly with an intermediate small wall of a connecter between two parallel walls, and each temple is pivotally connected with each connecter. Then the lens frame and the two temples are indirectly assembled with each other, and easy to be altered for changing an outer appearance of the eyeglasses.
摘要:
A touch device includes the following elements. A touch panel has two panel analog circuits and a panel digital circuit. Two inverting modules are assembled to two neighboring sides of the touch panel respectively, electrically coupled to the two panel analog circuits, and each electrically coupled to the panel digital circuit. A controlling module is assembled to the touch panel. The two inverting modules process analog signals transmitted from the two analog circuits into digital signals that are transmitted to the controlling module through the panel digital circuit. Therefore, the touch device may decrease a layout width that is occupied by the panel analog circuit.
摘要:
A method of fabricating a semiconductor device utilizes a substrate including a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. A first well of a first conductivity type is formed. Two separate second wells of a second conductivity type are formed in the first well and two separate isolation structures are formed respectively in the second wells in each of the high voltage circuit area and the medium voltage circuit area. A first gate dielectric layer is formed in the high voltage circuit area. A second gate dielectric layer that is thinner than the first gate dielectric layer is formed in each of the medium voltage circuit area and the low voltage circuit area. A gate is formed. Two source and drain regions of the second conductivity type are respectively formed. The method is simple and low-cost and meets the market requirement.
摘要:
A semiconductor device including a substrate, a high voltage device, a medium voltage device and a low voltage device is provided. The substrate includes a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. The high voltage device, the medium voltage device and the low voltage device are respectively disposed in the high voltage circuit area, the medium voltage circuit area and the low voltage circuit area. The medium voltage device and the high voltage device have the same structure while the medium voltage device and the low voltage device have different structures. Further, the high voltage device, the medium voltage device and the low voltage device respectively include a first gate dielectric layer, a second gate dielectric layer and a third gate dielectric layer, and the thickness of the second gate dielectric layer is smaller than that of the first gate dielectric layer.
摘要:
A laterally diffused metal-oxide-semiconductor (LDMOS) device as well as a method of making the same is disclosed. A gate is formed on a semiconductor substrate between a source region and a drain region with one side laterally extending onto a part of a field oxide layer and the opposite side beside the source region. A gate dielectric layer is formed between the gate and the semiconductor substrate, wherein the gate dielectric layer comprises two or more portions having different thicknesses arranged laterally in a way that the thicknesses of the portions gradually increase from one side beside the source doping region to the opposite side bordering the field oxide layer. With such structure, the hot carrier impact is minimized and the gate length can be scaled down to gain Idlin.
摘要:
An IC chip, including a switch LDMOS device and an analog LDMOS device, is configured on a substrate having a first conductive type. Components of the two LDMOS devices respectively include two gate conductive layers configured on two first active regions of the substrate. A common source contact region having a second conductive type is configured in a second active region, which is configured between the two first active regions. An isolation structure is included for isolating the second active region and the first active regions. The isolation structure between the first active regions and the second active region has a length “A” extending along a longitudinal direction of a channel under each gate conductive layer, and each gate conductive layer on each first active region has a length “L” extending along the longitudinal direction of the channel, the two LDMOS devices have different A/L values.
摘要:
A retention module (10) for securing a heat sink (20) to a printed circuit board (30) includes a pair of carriage arms (12) separated by a space and a connecting wall (14) interconnecting opposite rear free ends of the carriage arms. Each of the carriage arms integrally forms a lock catch (122) thereon to clasp the heat sink. A pair of opposite positioning ears (15) extend upwardly from corners where the carriage arms are connected with the connecting wall. The retention module and the heat sink are preassembled together via the lock catches clasping the heat sink before the retention module is mounted on the printed circuit board.
摘要:
A structure of illuminating unit includes a point-like light-emitting device, having an optical axis. An initial-stage conoid-like reflective surface has a convergent opening end and a divergent opening end. The point-like light-emitting device is located at the convergent opening end and the optical axis is toward the divergent end for emitting light. The initial-stage conoid-like reflective surface and the optical axis include an initial-stage included angle. A final-stage conoid-like reflective surface has a convergent opening end and a divergent opening end. The convergent opening end of the final-stage conoid-like reflective surface is coupled with the divergent opening end of the initial-stage conoid-like reflective surface. The final-stage conoid-like reflective surface and the optical axis include a final-stage included angle. The initial-stage included angle is larger than the final-stage included angle.