HEAT DISSIPATING APPARATUS
    41.
    发明申请
    HEAT DISSIPATING APPARATUS 失效
    热灭火装置

    公开(公告)号:US20060266500A1

    公开(公告)日:2006-11-30

    申请号:US11164893

    申请日:2005-12-09

    IPC分类号: H05K7/20

    摘要: A heat dissipating apparatus (10) includes a base (20), a plurality of stacked fins (30), and at least a heat pipe (40). The base absorbs heat from a heat-generating component. Each of the fins includes a main body (32), and a plurality of projection members (33) extending from the main body. The projection members of a first fin connect the projection members of a second fin. The projection members form a first heat transfer path for transferring heat from the base to the fins. The heat pipe includes a heat-absorbing portion (42) thermally contacting with the base, and a heat-dissipating portion (44) contacting with the fins. The heat pipe forms a second heat transfer path for transferring the heat from the base toward the fins.

    摘要翻译: 散热装置(10)包括基座(20),多个堆叠翅片(30)和至少一个热管(40)。 底座吸收来自发热部件的热量。 每个翅片包括主体(32)和从主体延伸的多个突出部件(33)。 第一翅片的突出部件连接第二散热片的突出部件。 突起构件形成用于将热量从基部传递到翅片的第一传热路径。 热管包括与基座热接触的吸热部分(42)和与翅片接触的散热部分(44)。 热管形成用于将热量从基部转移到翅片的第二传热路径。

    Eyeglasses frame
    43.
    发明授权
    Eyeglasses frame 失效
    眼镜架

    公开(公告)号:US5793464A

    公开(公告)日:1998-08-11

    申请号:US795758

    申请日:1997-02-06

    申请人: Chin-Lung Chen

    发明人: Chin-Lung Chen

    IPC分类号: G02C5/14 G02C5/22 G02C11/02

    摘要: Eyeglasses includes a lens frame, two temples and two connecters for connecting the lens frame with the temples. The lens frame has a slot in each of two side ends to fit firmly with an intermediate small wall of a connecter between two parallel walls, and each temple is pivotally connected with each connecter. Then the lens frame and the two temples are indirectly assembled with each other, and easy to be altered for changing an outer appearance of the eyeglasses.

    摘要翻译: 眼镜包括透镜框架,两个镜腿和两个连接器,用于将镜架与镜腿连接。 透镜框在两个侧端中的每一个中具有狭槽,以与两个平行壁之间的连接器的中间小壁牢固地配合,并且每个镜腿与每个连接器枢转地连接。 然后,透镜框架和两个镜腿间接组装,并且易于改变以改变眼镜的外观。

    TOUCH DEVICE
    44.
    发明申请
    TOUCH DEVICE 有权
    触摸手机

    公开(公告)号:US20140145865A1

    公开(公告)日:2014-05-29

    申请号:US14080793

    申请日:2013-11-15

    IPC分类号: G06F3/041

    CPC分类号: G06F3/0416 G06F3/044

    摘要: A touch device includes the following elements. A touch panel has two panel analog circuits and a panel digital circuit. Two inverting modules are assembled to two neighboring sides of the touch panel respectively, electrically coupled to the two panel analog circuits, and each electrically coupled to the panel digital circuit. A controlling module is assembled to the touch panel. The two inverting modules process analog signals transmitted from the two analog circuits into digital signals that are transmitted to the controlling module through the panel digital circuit. Therefore, the touch device may decrease a layout width that is occupied by the panel analog circuit.

    摘要翻译: 触摸装置包括以下元件。 触摸面板具有两个面板模拟电路和面板数字电路。 两个反相模块分别组装到触摸面板的两个相邻侧,电耦合到两个面板模拟电路,并且每个电耦合到面板数字电路。 控制模块组装到触摸面板上。 两个反相模块将从两个模拟电路传输的模拟信号转换成通过面板数字电路传输到控制模块的数字信号。 因此,触摸装置可以减小由面板模拟电路占用的布局宽度。

    Method of fabricating semiconductor device
    45.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08377776B2

    公开(公告)日:2013-02-19

    申请号:US13155500

    申请日:2011-06-08

    IPC分类号: H01L21/8234

    摘要: A method of fabricating a semiconductor device utilizes a substrate including a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. A first well of a first conductivity type is formed. Two separate second wells of a second conductivity type are formed in the first well and two separate isolation structures are formed respectively in the second wells in each of the high voltage circuit area and the medium voltage circuit area. A first gate dielectric layer is formed in the high voltage circuit area. A second gate dielectric layer that is thinner than the first gate dielectric layer is formed in each of the medium voltage circuit area and the low voltage circuit area. A gate is formed. Two source and drain regions of the second conductivity type are respectively formed. The method is simple and low-cost and meets the market requirement.

    摘要翻译: 制造半导体器件的方法利用包括高电压电路区域,中压电路区域和低电压电路区域的衬底。 形成第一导电类型的第一阱。 在第一阱中形成有第二导电类型的两个分离的第二阱,并且分别在高压电路区域和中压电路区域的每个中的第二阱中形成两个单独的隔离结构。 第一栅介质层形成在高压电路区域中。 在中压电路区域和低压电路区域中的每一个中形成比第一栅极介电层薄的第二栅极介电层。 门形成。 分别形成第二导电类型的两个源极和漏极区域。 该方法简单,成本低,符合市场需求。

    Semiconductor device and method of fabricating the same
    46.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07982288B2

    公开(公告)日:2011-07-19

    申请号:US12253822

    申请日:2008-10-17

    IPC分类号: H01L27/112

    摘要: A semiconductor device including a substrate, a high voltage device, a medium voltage device and a low voltage device is provided. The substrate includes a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. The high voltage device, the medium voltage device and the low voltage device are respectively disposed in the high voltage circuit area, the medium voltage circuit area and the low voltage circuit area. The medium voltage device and the high voltage device have the same structure while the medium voltage device and the low voltage device have different structures. Further, the high voltage device, the medium voltage device and the low voltage device respectively include a first gate dielectric layer, a second gate dielectric layer and a third gate dielectric layer, and the thickness of the second gate dielectric layer is smaller than that of the first gate dielectric layer.

    摘要翻译: 提供了包括基板,高电压装置,中压装置和低电压装置的半导体装置。 基板包括高压电路区域,中压电路区域和低压电路区域。 高压装置,中压装置和低压装置分别设置在高压电路区域,中压电路区域和低压电路区域中。 中压装置和高压装置具有相同的结构,而中压装置和低压装置具有不同的结构。 此外,高电压装置,中压装置和低电压装置分别包括第一栅极介电层,第二栅极介电层和第三栅极电介质层,并且第二栅极电介质层的厚度小于 第一栅介质层。

    Laterally diffused metal-oxide-semiconductor device and method of making the same
    47.
    发明授权
    Laterally diffused metal-oxide-semiconductor device and method of making the same 有权
    横向扩散的金属氧化物半导体器件及其制造方法

    公开(公告)号:US07683427B2

    公开(公告)日:2010-03-23

    申请号:US11857437

    申请日:2007-09-18

    IPC分类号: H01L29/76

    摘要: A laterally diffused metal-oxide-semiconductor (LDMOS) device as well as a method of making the same is disclosed. A gate is formed on a semiconductor substrate between a source region and a drain region with one side laterally extending onto a part of a field oxide layer and the opposite side beside the source region. A gate dielectric layer is formed between the gate and the semiconductor substrate, wherein the gate dielectric layer comprises two or more portions having different thicknesses arranged laterally in a way that the thicknesses of the portions gradually increase from one side beside the source doping region to the opposite side bordering the field oxide layer. With such structure, the hot carrier impact is minimized and the gate length can be scaled down to gain Idlin.

    摘要翻译: 公开了横向扩散的金属氧化物半导体(LDMOS)器件及其制造方法。 栅极形成在源极区域和漏极区域之间的半导体衬底上,其一侧横向延伸到场氧化物层的一部分和源极区域旁边的相对侧。 在栅极和半导体衬底之间形成栅极电介质层,其中栅极电介质层包括具有不同厚度的两个或更多个部分,其侧向排列成使得部分的厚度从源极掺杂区域旁边的一侧逐渐增加到 与场氧化物层接壤的相对侧。 利用这种结构,热载体的冲击被最小化,并且可以缩小栅极长度以获得Idlin。

    IC CHIP
    48.
    发明申请
    IC CHIP 有权
    IC芯片

    公开(公告)号:US20090184368A1

    公开(公告)日:2009-07-23

    申请号:US12018638

    申请日:2008-01-23

    IPC分类号: H01L29/78

    摘要: An IC chip, including a switch LDMOS device and an analog LDMOS device, is configured on a substrate having a first conductive type. Components of the two LDMOS devices respectively include two gate conductive layers configured on two first active regions of the substrate. A common source contact region having a second conductive type is configured in a second active region, which is configured between the two first active regions. An isolation structure is included for isolating the second active region and the first active regions. The isolation structure between the first active regions and the second active region has a length “A” extending along a longitudinal direction of a channel under each gate conductive layer, and each gate conductive layer on each first active region has a length “L” extending along the longitudinal direction of the channel, the two LDMOS devices have different A/L values.

    摘要翻译: 包括开关LDMOS器件和模拟LDMOS器件的IC芯片配置在具有第一导电类型的衬底上。 两个LDMOS器件的组件分别包括配置在衬底的两个第一有源区上的两个栅极导电层。 具有第二导电类型的公共源极接触区域被配置在第二有源区域中,第二有源区域被配置在两个第一有源区域之间。 包括用于隔离第二有源区和第一有源区的隔离结构。 第一有源区和第二有源区之间的隔离结构具有沿着每个栅极导电层下方的沟道的纵向方向延伸的长度“A”,并且每个第一有源区上的每个栅极导电层具有长度“L” 沿着通道的纵向方向,两个LDMOS器件具有不同的A / L值。

    Retention module for a heat sink
    49.
    发明授权
    Retention module for a heat sink 失效
    散热器保留模块

    公开(公告)号:US07436671B2

    公开(公告)日:2008-10-14

    申请号:US11682786

    申请日:2007-03-06

    IPC分类号: H05K7/20 F28F7/00

    摘要: A retention module (10) for securing a heat sink (20) to a printed circuit board (30) includes a pair of carriage arms (12) separated by a space and a connecting wall (14) interconnecting opposite rear free ends of the carriage arms. Each of the carriage arms integrally forms a lock catch (122) thereon to clasp the heat sink. A pair of opposite positioning ears (15) extend upwardly from corners where the carriage arms are connected with the connecting wall. The retention module and the heat sink are preassembled together via the lock catches clasping the heat sink before the retention module is mounted on the printed circuit board.

    摘要翻译: 用于将散热器(20)固定到印刷电路板(30)的保持模块(10)包括一对由空间分开的托架臂(12)和连接壁(14),所述连接壁将托架的相对的后自由端 武器。 每个托架臂在其上一体地形成一个锁扣(122)以扣紧散热器。 一对相对的定位耳(15)从托架臂与连接壁连接的拐角向上延伸。 在保持模块安装在印刷电路板上之前,保持模块和散热器通过夹紧散热器的锁扣预先组装在一起。

    Structure of illuminating unit and structure of illuminating light source
    50.
    发明授权
    Structure of illuminating unit and structure of illuminating light source 失效
    照明单元的结构和照明光源的结构

    公开(公告)号:US07354178B2

    公开(公告)日:2008-04-08

    申请号:US11223557

    申请日:2005-09-09

    IPC分类号: F21V7/00

    摘要: A structure of illuminating unit includes a point-like light-emitting device, having an optical axis. An initial-stage conoid-like reflective surface has a convergent opening end and a divergent opening end. The point-like light-emitting device is located at the convergent opening end and the optical axis is toward the divergent end for emitting light. The initial-stage conoid-like reflective surface and the optical axis include an initial-stage included angle. A final-stage conoid-like reflective surface has a convergent opening end and a divergent opening end. The convergent opening end of the final-stage conoid-like reflective surface is coupled with the divergent opening end of the initial-stage conoid-like reflective surface. The final-stage conoid-like reflective surface and the optical axis include a final-stage included angle. The initial-stage included angle is larger than the final-stage included angle.

    摘要翻译: 照明单元的结构包括具有光轴的点状发光装置。 初级锥形反射面具有收敛的开口端和发散的开口端。 点状发光装置位于会聚开口端,光轴朝向发光端的发散端。 初级锥形反射面和光轴包括初始阶段夹角。 最后阶段的锥形反射表面具有收敛的开口端和发散的开口端。 最终级锥形反射表面的会聚开口端与初始阶段锥形反射表面的发散开口端相连。 最后阶段的锥形反射表面和光轴包括最终级夹角。 初始包角大于最终级夹角。