公开(公告)号：US08736782B2

公开(公告)日：2014-05-27

申请号：US13415847

申请日：2012-03-09

申请人： Chin-Lung Chen ,  Jeng-Bin Hsu

发明人： Chin-Lung Chen ,  Jeng-Bin Hsu

IPC分类号： G02F1/1333 ,  G02F1/133 ,  H01Q9/30 ,  H01Q1/12

CPC分类号： G06F1/1637 ,  G06F1/1698 ,  H01Q1/2266 ,  H01Q9/42 ,  H01Q21/28

摘要： A notebook computer includes a host and a display device. The display device includes a casing and a liquid crystal display module. The casing is pivoted to the host. The liquid crystal display module includes a back cover, a light guide plate, a liquid crystal panel, a light source, and an antenna. The back cover is disposed in the casing. The light guide plate is disposed on and supported by the back cover. The liquid crystal panel is disposed on and supported by the back cover, and the light guide plate is located between the back cover and the liquid crystal panel. The light source is disposed on a side surface of the light guide plate. The antenna is integrally connected to the back cover.

摘要翻译： 笔记本电脑包括主机和显示设备。 显示装置包括壳体和液晶显示模块。 外壳枢转到主机。 液晶显示模块包括后盖，导光板，液晶面板，光源和天线。 后盖设置在壳体中。 导光板设置在后盖上并由后盖支撑。 液晶面板设置在后盖上并被后盖支撑，并且导光板位于后盖和液晶面板之间。 光源设置在导光板的侧面上。 天线一体地连接到后盖。

公开(公告)号：US08546880B2

公开(公告)日：2013-10-01

申请号：US12943114

申请日：2010-11-10

申请人： Chun-Yao Lee ,  Chin-Lung Chen ,  Wei-Chun Chang ,  Hung-Te Lin ,  Han-Min Huang

发明人： Chun-Yao Lee ,  Chin-Lung Chen ,  Wei-Chun Chang ,  Hung-Te Lin ,  Han-Min Huang

IPC分类号： H01L29/78

CPC分类号： H01L29/66477 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

摘要： An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate. An anti punch-through leakage current structure is formed by implanting the first type dopant through the dopant implanting opening. A doping concentration of the first type dopant of the high voltage deep first type well region is less than that of the anti punch-through leakage current structure and greater than that of the high voltage deep first type well region. A second type body is formed by implanting a second type dopant through the dopant implanting opening. A gate structure is formed on the second type substrate.

摘要翻译： 提供一种抗穿通漏电流MOS晶体管及其制造方法。 在第二类型的衬底中形成高电压深第一类型阱区和第一类型掺杂区。 具有掺杂剂注入口的掩模形成在第二类型衬底上。 通过在掺杂剂注入口中注入第一种类型的掺杂剂形成抗穿透漏电流结构。 高压深度第一类型阱区域的第一种掺杂剂的掺杂浓度小于抗穿透漏电流结构的掺杂浓度，并且大于高电压深度第一类型阱区域的掺杂浓度。 通过在掺杂剂注入口中注入第二种掺杂剂形成第二类型体。 栅极结构形成在第二类型基板上。

公开(公告)号：US20120112276A1

公开(公告)日：2012-05-10

申请号：US12943114

申请日：2010-11-10

申请人： Chun-Yao LEE ,  Chin-Lung Chen ,  Wei-Chun Chang ,  Hung-Te Lin ,  Han-Min Huang

发明人： Chun-Yao LEE ,  Chin-Lung Chen ,  Wei-Chun Chang ,  Hung-Te Lin ,  Han-Min Huang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/66477 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

摘要： An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate. An anti punch-through leakage current structure is formed by implanting the first type dopant through the dopant implanting opening. A doping concentration of the first type dopant of the high voltage deep first type well region is less than that of the anti punch-through leakage current structure and greater than that of the high voltage deep first type well region. A second type body is formed by implanting a second type dopant through the dopant implanting opening. A gate structure is formed on the second type substrate.

摘要翻译： 提供一种抗穿通漏电流MOS晶体管及其制造方法。 在第二类型的衬底中形成高电压深第一类型阱区和第一类型掺杂区。 具有掺杂剂注入口的掩模形成在第二类型衬底上。 通过在掺杂剂注入口中注入第一种类型的掺杂剂形成抗穿透漏电流结构。 高压深度第一类型阱区域的第一种掺杂剂的掺杂浓度小于抗穿透漏电流结构的掺杂浓度，并且大于高电压深度第一类型阱区域的掺杂浓度。 通过在掺杂剂注入口中注入第二种掺杂剂形成第二类型体。 栅极结构形成在第二类型基板上。

公开(公告)号：US20110244642A1

公开(公告)日：2011-10-06

申请号：US13155500

申请日：2011-06-08

申请人： Chin-Lung Chen ,  Han-Min Huang

发明人： Chin-Lung Chen ,  Han-Min Huang

IPC分类号： H01L21/8234

CPC分类号： H01L21/823857 ,  H01L21/823814 ,  H01L21/823878

摘要： A method of fabricating a semiconductor device utilizes a substrate including a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. A first well of a first conductivity type is formed. Two separate second wells of a second conductivity type are formed in the first well and two separate isolation structures are formed respectively in the second wells in each of the high voltage circuit area and the medium voltage circuit area. A first gate dielectric layer is formed in the high voltage circuit area. A second gate dielectric layer that is thinner than the first gate dielectric layer is formed in each of the medium voltage circuit area and the low voltage circuit area. A gate is formed. Two source and drain regions of the second conductivity type are respectively formed. The method is simple and low-cost and meets the market requirement.

摘要翻译： 制造半导体器件的方法利用包括高电压电路区域，中压电路区域和低电压电路区域的衬底。 形成第一导电类型的第一阱。 在第一阱中形成有第二导电类型的两个分离的第二阱，并且分别在高压电路区域和中压电路区域的每个中的第二阱中形成两个单独的隔离结构。 第一栅介质层形成在高压电路区域中。 在中压电路区域和低压电路区域中的每一个中形成比第一栅极介电层薄的第二栅极介电层。 门形成。 分别形成第二导电类型的两个源极和漏极区域。 该方法简单，成本低，符合市场需求。

公开(公告)号：US07834406B2

公开(公告)日：2010-11-16

申请号：US11753561

申请日：2007-05-24

申请人： Chin-Lung Chen

发明人： Chin-Lung Chen

IPC分类号： H01L29/78

CPC分类号： H01L29/42368 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/66568 ,  H01L29/7834

摘要： The present invention pertains to a high-voltage MOS device. The high-voltage MOS device includes a substrate, a first well, a first field oxide layer enclosing a drain region, a second field oxide enclosing a source region, and a third field oxide layer encompassing the first and second field layers with a device isolation region in between. A channel region is situated between the first and second field oxide layers. A gate oxide layer is provided on the channel region. A gate is stacked on the gate oxide layer. A device isolation diffusion layer is provided in the device isolation region.

摘要翻译： 本发明涉及一种高压MOS器件。 高电压MOS器件包括衬底，第一阱，围绕漏极区的第一场氧化物层，封闭源极区的第二场氧化物，以及围绕第一场和第二场的第三场氧化物层，以及器件隔离 区域之间。 沟道区域位于第一和第二场氧化物层之间。 栅极氧化层设置在沟道区上。 栅极堆叠在栅极氧化物层上。 在器件隔离区域中提供器件隔离扩散层。

公开(公告)号：US20070228103A1

公开(公告)日：2007-10-04

申请号：US11393522

申请日：2006-03-29

申请人： Kuo-Ching Chuang ,  Chin-Lung Chen

发明人： Kuo-Ching Chuang ,  Chin-Lung Chen

IPC分类号： B23K1/00 ,  B23K20/08

CPC分类号： B23K37/0443 ,  B23K3/087 ,  H05K3/3468

摘要： A solder spray jig includes: a main body having an opening acting as a spray outlet for solder, and recesses formed on two opposite sides of the main body and communicating with the spray outlet; a movable unit disposed on each of the two opposite sides of the main body, for covering and exposing a corresponding one of the recesses; and a driving device mounted to the movable units, for allowing the movable units to be operationally associated with each other to cover and expose the recesses. The spray outlet of the main body can keep abutting against a mold that covers a circuit board having electronic components when the main body is being moved horizontally in relation to the mold, so as to spray the solder via the spray outlet to effectively fix the electronic components to the circuit board.

摘要翻译： 焊料喷涂夹具包括：主体，其具有用作焊料的喷射出口的开口，以及形成在主体的两个相对侧并与喷射出口连通的凹部; 可移动单元，设置在主体的两个相对侧中的每一个上，用于覆盖和暴露相应的一个凹部; 以及安装到可移动单元的驱动装置，用于允许可移动单元彼此可操作地相关联以覆盖和暴露凹部。 当主体相对于模具水平移动时，主体的喷雾出口可以保持抵靠覆盖具有电子部件的电路板的模具，以便通过喷射出口喷射焊料以有效地固定电子 组件到电路板。

公开(公告)号：US07254026B2

公开(公告)日：2007-08-07

申请号：US11308385

申请日：2006-03-20

申请人： Ming Yang ,  Yeu-Lih Lin ,  Chin-Lung Chen

发明人： Ming Yang ,  Yeu-Lih Lin ,  Chin-Lung Chen

IPC分类号： H05K7/20 ,  B21D53/92 ,  F28F1/30

CPC分类号： H01L23/427 ,  F28D15/0266 ,  F28F1/32 ,  H01L23/3672 ,  H01L23/467 ,  H01L2924/0002 ,  Y10T29/4935 ,  Y10T29/49353 ,  H01L2924/00

摘要： A heat dissipation device (40) includes at least a heat pipe (45) and a plurality of metal fins (43) thermally connected to the heat pipe. Each of the metal fins defines therein an aperture (431). An extension flange (433) extends outwardly from the metal fin and surrounds the aperture. The extension flange defines therein a plurality of slits (435). The apertures and extension flanges of the metal fins are aligned together. The heat pipe is received in the aligned apertures and soldered by a thermal medium material to the metal fins via the aligned extension flanges. During the soldering process, rosin content contained in the thermal medium material can be discharged away via the slits formed in the extension flange.

摘要翻译： 散热装置（40）至少包括热管（45）和与热管热连接的多个金属翅片（43）。 每个金属翅片在其中限定有孔（431）。 延伸凸缘（433）从金属翅片向外延伸并且围绕孔。 延伸凸缘在其中限定多个狭缝（435）。 金属翅片的孔和延伸凸缘对齐在一起。 热管容纳在对准的孔中，并通过热介质材料经由对准的延伸凸缘焊接到金属翅片上。 在焊接过程中，包含在热介质材料中的松香含量可以通过形成在延伸凸缘中的狭缝排出。

公开(公告)号：US20060268513A1

公开(公告)日：2006-11-30

申请号：US11164328

申请日：2005-11-18

申请人： Jian-Qing Sheng ,  Chin-Lung Chen

发明人： Jian-Qing Sheng ,  Chin-Lung Chen

IPC分类号： H05K7/20

CPC分类号： H01L23/467 ,  H01L23/4093 ,  H01L2924/0002 ,  Y10S165/905 ,  H01L2924/00

摘要： A grease cover (50) for protecting grease spread on a bottom surface of a heat sink (20) includes a base wall (51), a plurality of sidewalls (52a, 52b, 52c, 52d), a protecting space (53) between the base wall and the sidewalls, a holding space in an upper portion of the protecting space, and two projections (54). The protecting space is for accommodating the grease. The holding space is for receiving the heat sink therein. The projections extend from two opposite sidewalls of the grease cover. A top surface of each of the projections spaces a distance from the base wall, for supporting the bottom surface of the heat sink to enable the grease away from the base wall, when the heat sink is received in the holding space.

摘要翻译： 用于保护在散热器（20）底面上分散的油脂的油脂盖（50）包括基壁（51），多个侧壁（52a，52b，52c，52d），保护空间 （53），在所述基壁和所述侧壁之间，所述保护空间的上部中的保持空间和两个突起（54）。 保护空间用于容纳油脂。 保持空间用于容纳散热器。 突起从油脂盖的两个相对的侧壁延伸。 每个突起的顶表面与底壁间隔一定距离，用于支撑散热器的底表面，以便当散热片被容纳在保持空间中时使油脂远离底壁。

公开(公告)号：US07066595B1

公开(公告)日：2006-06-27

申请号：US11011297

申请日：2004-12-13

申请人： Chin-Lung Chen

发明人： Chin-Lung Chen

IPC分类号： G02C5/16

CPC分类号： G02C5/2236 ,  G02C2200/30 ,  Y10T16/526

摘要： A temple assembly for a pair of glasses includes a temple, a pivotal member, a positioning member, a bolt mounted in a receptacle of the temple for retaining the positioning member, and an elastic element mounted in the receptacle and between the positioning member and a head of the bolt. An end of the pivotal member is pivotally connected to an end of a frame of a pair of glasses. The other end of the pivotal member is mounted in the receptacle of the temple and has a reduced section. The positioning member is mounted to the second end of the pivotal member and includes a peripheral edge that is deformed and in tight contact with a perimeter wall delimiting the receptacle of the temple. The deformed portion of the peripheral edge of the positioning member is in space above the reduced portion of the pivotal member.

摘要翻译： 用于一对眼镜的镜腿组件包括镜腿，枢转构件，定位构件，安装在用于保持定位构件的镜腿的容座中的螺栓，以及安装在容器中并位于定位构件和 螺栓头。 枢转构件的端部枢转地连接到一副眼镜的框架的端部。 枢转构件的另一端安装在寺庙的容器中并具有减小的截面。 定位构件安装到枢转构件的第二端并且包括周边边缘，该外围边缘变形并且与限定寺庙的容器的周边壁紧密接触。 定位构件的周缘的变形部分在枢转构件的缩小部分之上的空间中。

公开(公告)号：US20120240082A1

公开(公告)日：2012-09-20

申请号：US13354303

申请日：2012-01-19

申请人： Chin-Lung Chen

发明人： Chin-Lung Chen

IPC分类号： G06F3/048

CPC分类号： G08C17/02 ,  G06F3/038 ,  G06F3/04812 ,  G06F3/0482 ,  G06F2203/0383 ,  G08C2201/30

摘要： An operation method of an interactive service system is disclosed. The method includes the following steps: (1) providing a first menu, wherein the first menu has a plurality of first options arranged in a first array marked by a label selected from the group consisting of a numeral, icon, word and color; (2) selecting one of the first options in the first menu; and (3) providing an interactive service or a next layer menu according to the selected first option.

摘要翻译： 公开了一种交互式服务系统的操作方法。 该方法包括以下步骤：（1）提供第一菜单，其中第一菜单具有多个第一选项，其布置在由从数字，图标，字和颜色组成的组中选择的标签标记的第一阵列中; （2）选择第一菜单中的第一选项之一; 和（3）根据所选择的第一选项提供交互式服务或下一层菜单。