Semiconductor device and method of manufacturing the same
    43.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07144804B2

    公开(公告)日:2006-12-05

    申请号:US11022644

    申请日:2004-12-28

    IPC分类号: H01L21/4763

    摘要: A semiconductor device comprises a semiconductor substrate, an interlayer insulating film including a first insulating film formed above the substrate and having a relative dielectric constant smaller than 2.5 and a second insulating film formed to cover the first insulating film and having a relative dielectric constant larger than that of the first insulating film, and a buried wiring formed within the interlayer insulating film. A bottom portion of the second insulating film is buried in the first insulating film at a number of points.

    摘要翻译: 一种半导体器件,包括半导体衬底,层间绝缘膜,该层间绝缘膜包括形成在衬底上方的相对介电常数小于2.5的第一绝缘膜和形成为覆盖第一绝缘膜并且具有大于 第一绝缘膜,以及形成在层间绝缘膜内的掩埋布线。 第二绝缘膜的底部以多个点埋在第一绝缘膜中。

    Method of making semiconductor device by polishing with intermediate clean polishing
    44.
    发明授权
    Method of making semiconductor device by polishing with intermediate clean polishing 有权
    通过中间清洁抛光抛光制造半导体器件的方法

    公开(公告)号:US06984582B2

    公开(公告)日:2006-01-10

    申请号:US10730902

    申请日:2003-12-10

    IPC分类号: H01L21/44

    摘要: A polishing method comprises supplying a polishing liquid to an upper portion of a film to be polished to carry out first polishing, the film being provided on a layer having a groove with a predetermined pattern so as to be filled therewith, after the first polishing, polishing the film to carry out clean polishing while supplying one of distilled water and a cleaning liquid thereto, and after the clean polishing, polishing a residual portion of the film remaining outside of the groove by supplying a polishing liquid to carry out second polishing.

    摘要翻译: 抛光方法包括:将抛光液供给待研磨的膜的上部,进行第一次抛光,在第一次抛光之后,将膜设置在具有预定图案的槽以便填充的层上, 在向其中提供蒸馏水和清洁液之一的同时,对薄膜进行抛光以进行清洁抛光,并且在清洁抛光之后,通过提供抛光液来研磨残留在凹槽外侧的膜的剩余部分,以进行第二次抛光。