Mechanism for accumulating a stack of articles and for then dropping the
stack
    43.
    发明授权
    Mechanism for accumulating a stack of articles and for then dropping the stack 失效
    用于堆积一堆物品然后丢弃堆叠的机构

    公开(公告)号:US5675963A

    公开(公告)日:1997-10-14

    申请号:US521829

    申请日:1995-08-31

    IPC分类号: B65B5/06 B65B35/50

    CPC分类号: B65B5/061 B65B35/50

    摘要: The mechanism includes a pair of gates which are horizontally spaced from one another and which are operable to stroke between inwardly extended and outwardly retracted positions for collecting and dropping the articles, respectively. The gates are mounted on a threaded member for selective horizontal adjustment of the distance between the gates to enable collection of articles of various widths. As an incident to adjusting the distance between the gates, the stroke of the gates is simultaneously adjusted.

    摘要翻译: 该机构包括一对门,它们彼此水平间隔开并且可操作以分别在向内延伸的和向外缩回的位置之间行进,用于收集和分离物品。 门安装在螺纹构件上,用于选择性地水平调节门之间的距离,以便能够收集各种宽度的物品。 作为调整门之间距离的事件,同时调整门的行程。

    Skin surface sampling and visualizing device
    46.
    发明授权
    Skin surface sampling and visualizing device 失效
    皮肤表面采样和可视化装置

    公开(公告)号:US5088502A

    公开(公告)日:1992-02-18

    申请号:US626635

    申请日:1990-12-12

    申请人: David L. Miller

    发明人: David L. Miller

    IPC分类号: A61B10/00 A61B10/02

    CPC分类号: A61B10/02

    摘要: A device for sampling the surface of the skin includes a substrate having a light absorbing area disposed thereon. A layer of adhesive is disposed on the substrate overlying the light absorbing area. The adhesive layer is optically clear and under pressure conforms to the surface of the skin to be sampled. A removable protective film is disposed on the adhesive layer for protecting the adhesive layer prior to use of the device.

    摘要翻译: 用于对皮肤表面进行取样的装置包括其上设置有吸光区的基板。 一层粘合剂设置在覆盖光吸收区域的基板上。 粘合剂层是光学透明的,并且在压力下符合待采样的皮肤表面。 在使用该装置之前,在粘合剂层上设置可移除的保护膜以保护粘合剂层。

    Heterostructure semiconductor laser
    48.
    发明授权
    Heterostructure semiconductor laser 失效
    异质结构半导体激光器

    公开(公告)号:US4785457A

    公开(公告)日:1988-11-15

    申请号:US48359

    申请日:1987-05-11

    IPC分类号: H01S5/223 H01S5/30 H01S3/19

    摘要: The crystallographic plane-dependent, amphoteric nature of Si-doped AlGaAs is used to provide a low threshold semiconductor laser. An active layer of AlGaAs is sandwiched between an injection layer and a current confining layer of AlGaAs. The injection layer is doped to be n-type conductivity. The confining layer is amphoterically doped with Si to be n-type in a (100) plane and p-type in a (111)A plane. The resulting p-n junctions, heterostructure, and geometry provide the current and the optical confinement for the semiconductor laser.

    摘要翻译: Si掺杂AlGaAs的晶体平面依赖性,两性性质用于提供低阈值半导体激光器。 AlGaAs的有源层夹在注入层和AlGaAs的电流限制层之间。 注入层掺杂为n型导电性。 限制层在(100)平面中两性Si掺杂为n型,在(111)A平面中p型。 所得到的p-n结,异质结构和几何形状提供半导体激光器的电流和光学限制。