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公开(公告)号：US06968850B2
公开(公告)日：2005-11-29
申请号：US10197628
申请日：2002-07-15
申请人： Michael Chan , Robert Bristol , Mark Doczy
发明人： Michael Chan , Robert Bristol , Mark Doczy
CPC分类号： G21K1/06 , B08B7/0057 , G03F7/70925 , Y10S134/902
摘要： A method and system for cleaning collector optics in a light source chamber. In producing, for example, extreme ultraviolet light for lithography, debris such as tungsten can accumulate on optical components near a light source in the light source chamber.An etchant, such as a fluorine-containing gas, can be introduced into the light source chamber. The etchant is ionized via electrodes to generate free fluorine. The electrodes can be, for example, existing light source chamber components including the optical components. The fluorine can then react with the debris, forming gaseous compounds, which are pumped out of the light source chamber.
摘要翻译： 一种用于清洁光源室中的收集器光学元件的方法和系统。 例如，在制造用于光刻的极紫外光时，诸如钨的碎屑可以积聚在光源室中的光源附近的光学部件上。 诸如含氟气体的蚀刻剂可以被引入到光源室中。 蚀刻剂通过电极离子化以产生游离氟。 电极可以是例如包括光学部件的现有光源室部件。 然后，氟可以与碎屑反应，形成气体化合物，其被泵送出光源室。
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公开(公告)号：US20050074706A1
公开(公告)日：2005-04-07
申请号：US10679816
申请日：2003-10-06
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。
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公开(公告)号：US20050069818A1
公开(公告)日：2005-03-31
申请号：US10676411
申请日：2003-09-30
申请人： Robert Bristol , Heidi Cao , Robert Meagley
发明人： Robert Bristol , Heidi Cao , Robert Meagley
CPC分类号： G03F7/0392 , G03F7/0046
摘要： An embodiment of the present invention includes a technique to provide a highly absorptive resist. A resist is formed using a highly absorbing material. The resist is thinned to a pre-determined thickness used as an imaging layer. The efficiency of a photoactive acid generator (PAG) is improved to capture secondary electrons produced by an ionizing radiation in the resist.
摘要翻译： 本发明的一个实施方案包括提供高吸收性抗蚀剂的技术。 使用高吸收性材料形成抗蚀剂。 将抗蚀剂变薄到用作成像层的预定厚度。 改善光活性酸发生剂（PAG）的效率以捕获由抗蚀剂中的电离辐射产生的二次电子。
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