摘要:
Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.
摘要:
Cross point array magnetoresistive random access memory (MRAM) implementing spin hall magnetic tunnel junction (MTJ)-based devices and methods of operation of such arrays are described. For example, a bit cell for a non-volatile memory includes a magnetic tunnel junction (MTJ) stack disposed above a substrate and having a free magnetic layer disposed above a dielectric layer disposed above a fixed magnetic layer. The bit cell also includes a spin hall metal electrode disposed above the free magnetic layer of the MTJ stack.
摘要:
Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic demultiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.
摘要:
Described herein are technologies related to a semiconductor package that is installed in a portable device for data communications. More particularly, the semiconductor package that contains a memory, a digital logic chip, and an optical port in a single module or mold is described.
摘要:
Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.
摘要:
Provided are transistor devices such as logic gates that are capable of associating a computational state and or performing logic operations with detectable electronic spin state and or magnetic state. Methods of operating transistor devices employing magnetic states are provided. Devices comprise input and output structures and magnetic films capable of being converted between magnetic states.
摘要:
A method of operating an optical isolator having first and second optical splitter-combiners disposed within a semiconductor die. The optical splitter-combiners are coupled together into an interferometer configuration by first and second waveguide sections also disposed in the semiconductor die. A non-reciprocal optical phase shift element is disposed within the semiconductor die. The method operates by splitting forward and backward propagating optical waves into first and second portions propagating along first and second waveguide sections of a waveguide structure disposed within a semiconductor die, injecting first and second charge carriers having opposite spin polarizations into the first waveguide section; constructively recombining the first and second portions of the forward propagating optical wave, and destructively recombining the first and second portions of the reverse propagating optical wave
摘要:
An optical isolator includes first and second optical splitter-combiners disposed within a semiconductor die. The optical splitter-combiners are coupled together into an interferometer configuration by first and second waveguide sections also disposed in the semiconductor die. A non-reciprocal optical phase shift element is disposed within the semiconductor die and includes the first waveguide section passing through the non-reciprocal optical phase shift element. The optical isolator is configured such that forward propagating waves are constructively recombined by the second optical splitter-combiner while reverse propagating wave are destructively recombined by the first optical splitter-combiner.
摘要:
An integrated optical circuit includes waveguides formed in the integrated optical circuit. One set of waveguides is a set of optical amplifiers doped with rare earth ions. A second set of waveguides is a multiplexer or demultiplexer, such as an arrayed waveguide grating (AWG). The set of optical amplifiers and the AWG are coupled together via waveguides formed in the integrated optical circuit. Other elements on the integrated optical circuit are coupled to the set of optical amplifiers and the AWG via optical fibers. The spectral response of the AWG is modified to compensate for the spectral gain of the AWG. The lengths of the individual optical amplifiers in the set of optical amplifiers may be varied to cause uniform power distribution across channels. The integrated optical circuit also has a pump coupler to couple a pump source to the set of optical amplifiers.
摘要:
Interface loss, diffraction loss, and physical sizes of arrayed-waveguide (AWG) devices, such as AWG routers, are reduced via use of an array of asymmetric waveguide couplers that is inserted between arrayed waveguides. The asymmetric waveguide couplers operate to couple leaked optical power back to the arrayed waveguides. A lenslet matrix may also be used to pre-channel portions of an optical wavefront. The lenslet matrix includes lenslet columns that are aligned with gaps between the arrayed waveguides, such that the portions of the optical wavefront are directed towards the arrayed waveguides rather than towards the gaps.