摘要:
A method of evaluating the characteristics of a solid state image sensor measures the unit cell output values of the sensor and assigns the output values to a predetermined rank, and counts the number of unit cells cumulatively in each rank, and then, by regarding the frequency distribution profile of the unit cell output values obtained in such way as the intrinsic electrical characteristics of the sensor, judges the picture quality of the sensor by using this frequency distribution profile.
摘要:
A projection picture tube includes a bulb, a sealing chamber disposed in contact with a front surface of a phosphor screen panel of the bulb and sealed with a liquid coolant, and a holding mechanism for holding the sealing chamber by the bulb. The sealing chamber includes a transparent member disposed in front of the phosphor screen panel to be spaced apart therefrom, a heat dissipation member which is disposed between the transparent member and the phosphor screen panel and part of which is in contact with the liquid coolant sealed in the sealing chamber, seal members respectively disposed between the heat dissipation member and the phosphor screen panel and between the heat dissipation member and the transparent member, and a holding piece for holding the transparent member on the heat dissipation member. The holding mechanism is coupled to the heat dissipation member.
摘要:
A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要:
A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.
摘要:
A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera. Thereby, devices are isolated between MOS transistors, and noise caused by leakage current is decreased.
摘要:
A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要:
A noise reduction circuit outputs a signal corresponding to a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals at different timings; and a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit. The noise reduction circuit accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output a resultant electric charge.
摘要:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要:
Photoelectric converters are arranged two-dimensionally in a semiconductor substrate. A planarizing layer, a light shielding film, a further planarizing layer and condenser lenses are formed sequentially on the semiconductor substrate and the photoelectric converters. The light shielding film has apertures at positions corresponding to the photoelectric conversion devices. Multilayer interference filters that transmit either a red, green or blue wavelength component of light are disposed in the apertures.
摘要:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.