Liquid cooling type projection picture tube
    42.
    发明授权
    Liquid cooling type projection picture tube 失效
    液体冷却型投影显像管

    公开(公告)号:US4731557A

    公开(公告)日:1988-03-15

    申请号:US879138

    申请日:1986-06-26

    CPC分类号: H01J29/006

    摘要: A projection picture tube includes a bulb, a sealing chamber disposed in contact with a front surface of a phosphor screen panel of the bulb and sealed with a liquid coolant, and a holding mechanism for holding the sealing chamber by the bulb. The sealing chamber includes a transparent member disposed in front of the phosphor screen panel to be spaced apart therefrom, a heat dissipation member which is disposed between the transparent member and the phosphor screen panel and part of which is in contact with the liquid coolant sealed in the sealing chamber, seal members respectively disposed between the heat dissipation member and the phosphor screen panel and between the heat dissipation member and the transparent member, and a holding piece for holding the transparent member on the heat dissipation member. The holding mechanism is coupled to the heat dissipation member.

    摘要翻译: 投影显像管包括灯泡,与灯泡的荧光屏面板的前表面接触并用液体冷却剂密封的密封室,以及由灯泡保持密封室的保持机构。 密封室包括设置在荧光屏面板前方以与之隔开的透明构件,散热构件,设置在透明构件和荧光屏面板之间,其一部分与被密封的荧光屏接触 密封室,分别设置在散热构件和荧光屏面板之间以及散热构件和透明构件之间的密封构件,以及用于将透明构件保持在散热构件上的保持片。 保持机构联接到散热构件。

    Solid-state imaging device, signal processing method, and camera
    43.
    发明授权
    Solid-state imaging device, signal processing method, and camera 有权
    固态成像装置,信号处理方法和相机

    公开(公告)号:US08134191B2

    公开(公告)日:2012-03-13

    申请号:US12160291

    申请日:2006-07-11

    IPC分类号: H01L31/09

    CPC分类号: H04N9/045 H04N5/33 H04N5/332

    摘要: A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.

    摘要翻译: 一种使用可见光进行彩色成像并使用红外光成像的固态成像装置,所述固态成像装置包括多个二维排列的像素单元,每个像素单元中的每一个主要透过可见光和红外线之一 光,其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的, 交替地排列在行方向和列方向上。 此外,在第一单元中布置有包括发射红光,绿光和蓝光中的一种的三种滤光器的滤色器,并且在第二种布置中布置了四种滤色片,每种滤色片透过红光,绿光 ,蓝光和红外灯。

    MOS image pick-up device and camera incorporating the same
    45.
    再颁专利
    MOS image pick-up device and camera incorporating the same 有权
    MOS图像拾取装置和包含其的相机

    公开(公告)号:USRE41867E1

    公开(公告)日:2010-10-26

    申请号:US12397560

    申请日:2009-03-04

    申请人: Takumi Yamaguchi

    发明人: Takumi Yamaguchi

    IPC分类号: H01L31/103

    CPC分类号: H01L27/14609 H01L27/14643

    摘要: A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera. Thereby, devices are isolated between MOS transistors, and noise caused by leakage current is decreased.

    摘要翻译: 一种MOS图像拾取装置,包括半导体衬底,通过排列多个单位像素而形成在半导体衬底上的成像区域和包括用于操作形成在半导体衬底上的成像区域的驱动电路的外围电路区域; 单位像素包括光电二极管,MOS(金属氧化物半导体)晶体管和第一器件隔离部分,外围电路区域包括用于隔离驱动电路中的器件的第二器件隔离部分; 其中,所述第一器件隔离部分和所述第二器件隔离部分中的每一个是选自形成在所述衬底上的电绝缘膜中的至少一个部分,以便不侵蚀所述衬底;形成在所述衬底上的电绝缘膜,以便 将衬底侵蚀到1nm至50nm的深度,以及形成在衬底内的杂质扩散区。 MOS图像拾取装置并入相机中。 因此,器件在MOS晶体管之间被隔离,并且由漏电流引起的噪声降低。

    Noise reduction circuit
    47.
    发明授权
    Noise reduction circuit 有权
    降噪电路

    公开(公告)号:US07589585B2

    公开(公告)日:2009-09-15

    申请号:US11826582

    申请日:2007-07-17

    IPC分类号: H03K17/16 H03K5/00

    CPC分类号: H03K5/1252 H04N5/21

    摘要: A noise reduction circuit outputs a signal corresponding to a voltage difference between two different signals. The noise reduction circuit includes: an amplifier circuit for amplifying the two different signals at different timings; and a voltage difference detection circuit for detecting a voltage difference between the two different signals amplified by the amplifier circuit. The noise reduction circuit accumulates, a predetermined number of times, an electric charge corresponding to the voltage difference detected by the voltage difference detection circuit and combines the accumulated electric charges to output a resultant electric charge.

    摘要翻译: 噪声降低电路输出与两个不同信号之间的电压差对应的信号。 噪声降低电路包括:放大器电路,用于在不同的定时放大两个不同的信号; 以及电压差检测电路,用于检测由放大器电路放大的两个不同信号之间的电压差。 噪声降低电路以预定次数累积与由电压差检测电路检测出的电压差对应的电荷,并组合累积的电荷以输出所得的电荷。

    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATIG THE SAME
    48.
    发明申请
    SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATIG THE SAME 有权
    固态成像装置及其制造方法

    公开(公告)号:US20090021626A1

    公开(公告)日:2009-01-22

    申请号:US12233068

    申请日:2008-09-18

    IPC分类号: H04N5/335

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。

    Solid state imaging apparatus and method for fabricating the same
    50.
    发明授权
    Solid state imaging apparatus and method for fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US07436012B2

    公开(公告)日:2008-10-14

    申请号:US11335533

    申请日:2006-01-20

    IPC分类号: H01L31/062 H01L31/113

    摘要: A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

    摘要翻译: 本发明的半导体器件包括:衬底; 在基板的一部分形成的成像区域,其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外,分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层,作为用于防止铜扩散到每个光电转换部中的防扩散层。