公开(公告)号：US10854768B2

公开(公告)日：2020-12-01

申请号：US16226753

申请日：2018-12-20

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Xiaoge Zeng ,  Zhihong Huang ,  Di Liang

IPC: H01L31/107 ,  G01J1/44 ,  H01L31/18

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

公开(公告)号：US10680407B2

公开(公告)日：2020-06-09

申请号：US15483678

申请日：2017-04-10

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/065 ,  H01S5/068 ,  H01S5/14 ,  H01S5/02 ,  H01S5/026 ,  H01S3/106 ,  H01S5/34

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

公开(公告)号：US20200067274A1

公开(公告)日：2020-02-27

申请号：US16108399

申请日：2018-08-22

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Geza Kurczveil ,  Chong Zhang ,  Di Liang ,  Raymond G. Beausoleil

IPC: H01S5/10 ,  H01S5/50 ,  H01S5/022 ,  H01S5/343 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34

Abstract: A quantum dot comb laser includes a body defining a lasing cavity and an extension defining an external cavity, the FSR of the lasing cavity being an inverse of an integer multiple of the FSR of the external cavity.

公开(公告)号：US20200057198A1

公开(公告)日：2020-02-20

申请号：US16666053

申请日：2019-10-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02B6/122 ,  G02B6/124 ,  G02B5/18 ,  G02B6/13 ,  G02B6/12 ,  H01S5/02 ,  H01S5/20 ,  H01S5/10 ,  H01S3/23 ,  H01S3/063

Abstract: A hybrid grating comprises a first grating layer composed of a first solid-state material, and a second grating layer over the first grating layer and composed of a second solid-state material, the second solid state-material being different than the first solid-state material and having a monocrystalline structure.

公开(公告)号：US20190310422A1

公开(公告)日：2019-10-10

申请号：US15946807

申请日：2018-04-06

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Mir Ashkan Seyedi ,  Di Liang

IPC: G02B6/293 ,  H01S5/00 ,  H04B10/50 ,  H04J14/02 ,  H04B10/572

Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate with a main bus waveguide disposed within the substrate. Two or more ring lasers are disposed within the substrate and are optically coupled to the main bus waveguide. The ring lasers have a wavelength control mechanism allowing change of a lasers emitted wavelength. A wavelength selective filter is optically coupled to the bus waveguide. A control circuit is electronically coupled to each wavelength control mechanism, and the wavelength selective filter. The control circuit in conjunction with the selective filter allows monitoring of a ring laser's wavelength on the main bus waveguide. Based on a determined wavelength, the control circuit may change a ring laser wavelength to a desired wavelength to achieve a desired wavelength spacing for each of the ring lasers. The PIC may be integrated as a coarse wave-length division multiplexing (CWDM) transmit module.

公开(公告)号：US10366883B2

公开(公告)日：2019-07-30

申请号：US15324709

申请日：2014-07-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang

IPC: H01S5/00 ,  H01L21/02 ,  H01L21/764 ,  H01L21/306 ,  H01L31/0304 ,  H01S5/02 ,  H01S5/323 ,  H01L31/102

Abstract: A multilayer device includes a substrate and a first layer disposed on the substrate. A trench extends through one or both of the substrate and the first layer. The trench has a first sidewall spaced apart from a second sidewall, each sidewall extending from an upper surface of the substrate to a lower surface of the first layer. An optically active region is disposed on the first layer overlying the trench, such that at least a portion of the optically active region is located within a set of lines corresponding to the sidewalls of the trench.

公开(公告)号：US10305251B2

公开(公告)日：2019-05-28

申请号：US15151647

申请日：2016-05-11

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Di Liang ,  Yingtao Hu

IPC: H01S5/026 ,  H01S5/00 ,  H01S5/10 ,  H01S5/02 ,  H01S5/06

Abstract: According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

公开(公告)号：US10209445B2

公开(公告)日：2019-02-19

申请号：US15976944

申请日：2018-05-11

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Di Liang ,  David A. Fattal ,  Marco Florentino ,  Zhen Peng ,  Charles M. Santori ,  Raymond G. Beausoleil

IPC: G02B6/34 ,  G02B6/122 ,  H01S5/10 ,  B82Y20/00 ,  G02B6/125 ,  H01S5/125 ,  G02B6/12 ,  H01S5/12

Abstract: Compact photonics platforms and methods of forming the same are provided. An example of a compact photonics platform includes a layered structure having an active region along a longitudinal axis, a facet having an angle no less than a critical angle formed at at least one longitudinal end of the active region, and a waveguide having at least one grating coupler positioned in alignment with the angled facet to couple light out to or in from the waveguide.

公开(公告)号：US10193634B2

公开(公告)日：2019-01-29

申请号：US15269542

申请日：2016-09-19

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Cheng Li ,  Di Liang ,  Kehan Zhu

IPC: H04B10/564 ,  H04L27/01 ,  H04B10/54 ,  H04L25/02 ,  H04L25/03 ,  H04B10/80

Abstract: Examples disclosed herein relate to optical driver circuits. In some of the disclosed examples, an optical driver circuit includes a pre-driver circuit and a main driver circuit. The pre-driver circuit may include a pattern generator and at least one serializer to generate a main modulation signal and an inverted delayed modulation signal. The main driver circuit may include a level controller to control amplitudes of pre-emphasis on rising and falling edges of a modulation signal output and an equalization controller to transition the modulation signal output from the pre-emphasis amplitudes to main modulation amplitudes using the inverted delayed modulation signal.

公开(公告)号：US10192857B2

公开(公告)日：2019-01-29

申请号：US15338699

申请日：2016-10-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Marco Fiorentino ,  Di Liang ,  Geza Kurczveil ,  Raymond G Beausoleil

IPC: G02B6/13 ,  H01L25/16 ,  H01L23/00 ,  H01L25/00 ,  G02B6/12

Abstract: According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry. The direct bandgap (DBG) semiconductor structure is optically coupled to the photonics circuitry.