Intensity noise mitigation for vertical-cavity surface emitting lasers

    公开(公告)号:US10985531B2

    公开(公告)日:2021-04-20

    申请号:US16258616

    申请日:2019-01-27

    Abstract: A VCSEL device includes a substrate and a first DBR structure disposed on the substrate. The VCSEL device further includes a cathode contact disposed on a top surface of the first DBR structure. In addition, the VCSEL device includes a VCSEL mesa that is disposed on the top surface of the first DBR structure. The VCSEL mesa includes a quantum well, a non-circularly-shaped oxide aperture region disposed above the quantum well, and a second DBR structure disposed above the non-circularly-shaped oxide aperture region. In addition, the VCSEL mesa includes a selective polarization structure disposed above the second DBR structure and an anode contact disposed above the selective polarization structure.

    Low impedance VCSELs
    43.
    发明授权

    公开(公告)号:US10978854B2

    公开(公告)日:2021-04-13

    申请号:US16718523

    申请日:2019-12-18

    Abstract: In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer and a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.

    Turning mirror optical couplers
    44.
    发明授权

    公开(公告)号:US10816738B2

    公开(公告)日:2020-10-27

    申请号:US15521539

    申请日:2014-10-24

    Abstract: One example includes an optical coupler. The optical coupler includes a waveguide formed in a first layer of a layered structure that is to propagate an optical signal. The waveguide includes an end portion. The optical coupler also includes a turning mirror that includes a bulk structure and a reflective material deposited on an angular face of the bulk structure to form a surface of the turning mirror. The bulk structure can have a greater cross-sectional size than a cross-sectional size of the waveguide, such that the angular face extends above the first layer of the layered structure and extends into a second layer of the layered structure below the first layer. The surface of the turning mirror can be arranged to reflect the optical signal that is provided from the end portion of the waveguide.

    OPTOELECTRONIC DEVICE WITH A SUPPORT MEMBER
    45.
    发明申请

    公开(公告)号:US20200132953A1

    公开(公告)日:2020-04-30

    申请号:US16175652

    申请日:2018-10-30

    Abstract: Optoelectronic devices with a support member and methods of manufacturing or assembling the same are provided. An example of an optoelectronic device according to the present disclosure includes a substrate and an optical component and an electronic component disposed thereon or therein. The optoelectronic device further includes a ferrule coupled to the optical fiber and an optical socket receiving the ferrule therein. The optoelectronic device includes a support member disposed between the substrate and the optical socket such that the optical socket is spaced from the substrate by the support member.

    BONDED FILTER SUBSTRATES
    46.
    发明申请

    公开(公告)号:US20200057212A1

    公开(公告)日:2020-02-20

    申请号:US16665995

    申请日:2019-10-28

    Abstract: In the examples provided herein, an apparatus has a first substrate upon which one or more first filters have been fabricated on a first surface of the first substrate. The apparatus also has a second substrate upon which one or more second filters have been fabricated on a second surface of the second substrate, wherein the one or more first filters and the one or more second filters each transmit a different band of wavelengths. Additionally, the apparatus has a bonding material that bonds the first substrate to the second substrate.

    Bottom emitting vertical-cavity surface-emitting lasers

    公开(公告)号:US10290996B1

    公开(公告)日:2019-05-14

    申请号:US15962649

    申请日:2018-04-25

    Abstract: A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity.

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