Mode division multiplexing using vertical-cavity surface emitting lasers

    公开(公告)号:US10795098B2

    公开(公告)日:2020-10-06

    申请号:US16229967

    申请日:2018-12-21

    Abstract: A VCSEL transmitter includes a first VCSEL terminal disposed on a substrate and a second VCSEL terminal adjacent thereto. The transmitter also includes a first diffraction element within a first optical path of the first VCSEL terminal which receives and changes a first direction of a first light transmission having a low-order Laguerre Gaussian mode emitted from the first VCSEL terminal. The transmitter further includes a second diffraction element within a second optical path of the second VCSEL terminal which receives the second light transmission and converts the received light into a high-order Laguerre Gaussian mode. The transmitter also includes a mode combiner to direct the first light transmission into a lens which directs the light into a multi-mode optical fiber.

    BONDED FILTER SUBSTRATES
    4.
    发明申请

    公开(公告)号:US20200057212A1

    公开(公告)日:2020-02-20

    申请号:US16665995

    申请日:2019-10-28

    Abstract: In the examples provided herein, an apparatus has a first substrate upon which one or more first filters have been fabricated on a first surface of the first substrate. The apparatus also has a second substrate upon which one or more second filters have been fabricated on a second surface of the second substrate, wherein the one or more first filters and the one or more second filters each transmit a different band of wavelengths. Additionally, the apparatus has a bonding material that bonds the first substrate to the second substrate.

    Bottom emitting vertical-cavity surface-emitting lasers

    公开(公告)号:US10290996B1

    公开(公告)日:2019-05-14

    申请号:US15962649

    申请日:2018-04-25

    Abstract: A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) structure includes a first substrate permitting the passage of light therethrough, an n-doped distributed Bragg reflector (nDBR), a p-doped distributed Bragg reflector (pDBR), one or more active layers, at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror, and a plurality of layers, where the VCSEL structure is configured to be flip chipped to a second substrate. The pDBR and the nDBR define a laser cavity extending vertically therebetween and containing the one or more active layers. The at least one of a high contrast grating mirror and a dielectric-enhanced metal mirror may be disposed over the pDBR. The plurality of layers may be disposed over the at least one of the high contrast grating mirror and the dielectric-enhanced metal mirror to optically and hermetically seal the laser cavity.

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