摘要:
Because a vehicle rear view monitoring device changes the detection threshold level of each of distance sensors 4-1 to 4-4 to change horizontal and vertical detection areas and a bearing resolution, determines the display position of an obstacle mark 16 from the distances to an obstacle 15 detected by the plurality of distance sensors 4-1 to 4-4, and amplitude information about the amplitude of a reflected wave from the obstacle, and overlays the obstacle mark 16 on the obstacle 15 by using an overlay unit 17, the vehicle rear view monitoring device improves the degree of positional precision of the overlay of the obstacle mark on the obstacle displayed on a captured image.
摘要:
The present invention is a single-phase voltage source AC-DC power converter and a three-phase voltage source AC-DC power converter. Each of the single-phase voltage source AC-DC power converter and the three-phase voltage source AC-DC power converter includes a voltage source AC-DC power converting circuit that converts power from a DC voltage source into AC power to output the AC power from an AC terminal; and target current producing means that includes a filter voltage command device and a voltage controller, the filter voltage command device generating a filter voltage command value that becomes a reference of the AC power output from the AC terminal, the AC output voltage at the AC terminal being input as an input signal to the voltage controller, the voltage controller integrating a difference between the filter voltage command value from the filter voltage command device and the AC output voltage at the AC terminal, the target current producing means outputting a PWM command such that the integration value of the difference between the filter voltage command value from the filter voltage command device and the AC output voltage at the AC terminal becomes zero.
摘要:
To suppress a DC component in AC power in a power converter for converting DC power to AC power. DC power is converted to AC power by a converter 2, and the AC power is supplied to output terminals u1 and u2 via an inductor 3. The converter 2 is controlled based on an error Δ(t) between an output current ip(t) outputted from the converter 2 and a target current j(t) outputted from a target current generation means 110 as a target value for the output current ip(t), and a DC component VD in an output terminal voltage v(t) is detected by a voltage detection means 18. A DC component ID is suppressed by correcting a target current j(t) by a DC component suppression means 8. Also, a DC component in the AC power is suppressed to prevent biased magnification of a transformer 4 by calculating a correction amount jh(t) for correcting the target current j(t) from the difference between a first instantaneous value d1 of a load current is(t) flowing to a load 4 at a first time point t1 and a second instantaneous value d2 of the load current is(t) at a second time point t2 that is a half cycle after the first time point to correct the target current j(t).
摘要:
A CD package includes a CD tray for removably holding a CD, and a paper mount to which the CD tray is affixed. The CD tray is formed of paper produced from raw material other than wood pulp; specifically, paper produced from a combination of kenaf and bamboo fibers. The paper mount is formed of paper that contains kenaf and/or bagasse fibers in an amount of about 5-30% by weight and wood pulp as the, balance.
摘要:
In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.
摘要翻译:在TRS(双脊衬底)型半导体激光器中,选择谐振器在振荡波长处的两个面处的反射率高于激光器件的半导体晶体的反射率,但小于1,从而稳定光振荡 S / N比低。
摘要:
A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.
摘要:
A stem for a semiconductor laser device of a terraced substrate structure which has a tilted active layer against flat parts of the substrate, the stem comprises a base plate and a heat sink block, a flat face of the heat sink block for bonding the semiconductor laser device thereonto is tilted with respect to a base face of the base plate; this stem has features that the polarization direction of the lased light from the semiconductor laser device can be set to be parallel to (or perpendicular to) the base face of the base plate, and therefore it becomes much easier to make adjustments related with the polarization direction of the lased light.
摘要:
A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.
摘要:
In a terraced substrate type semiconductor laser comprising a semiconductor substrate (11) having a step (T) on its principal face, an active layer (13) with an oblique central region (131), defined between two bendings, as stripe-shaped lasing region near the foot of the step part (T) of the substrate (11), and a clad layer (14) formed on the active layer (13),The device is characterized by comprising a current injection region (22) which is formed by diffusing an impurity, in a manner that a diffusion front corner (221) penetrate the clad layer (14) and contacts the oblique lasing region (131) thereby to form the current injection path (221) very narrow and closely to the central part of the stripe-shaped lasing region (13), thereby effectively confining the injected current to the lasing region (131) and hence attaining very low threshold current and very high external differential quantum efficiency.
摘要:
In a semiconductor laser a semiconductor substrate has a terrace structure in a manner to have an upper face, a lower face, and a step part disposed between the upper and lower faces. A clad layer is formed on the semiconductor substrate having an upper part, a lower part, and a central part. The upper part is on the upper face and the step part. The lower part is on the lower face and the central part connecting the upper and lower parts and is thicker than the upper and lower parts in a manner that a step-shaped downward-bending surface of the central part is located above the lower face. An active layer formed on the clad layer includes an upper lateral part, a lower lateral part, a center part connecting the upper and lower lateral parts, with a lasing region being a part of the upper lateral part which is near a bending part of the step-shaped downward-bending surface.