VEHICLE REAR VIEW MONITORING DEVICE
    41.
    发明申请
    VEHICLE REAR VIEW MONITORING DEVICE 有权
    车辆后视野监控装置

    公开(公告)号:US20120327239A1

    公开(公告)日:2012-12-27

    申请号:US13582691

    申请日:2010-05-19

    IPC分类号: H04N7/18

    摘要: Because a vehicle rear view monitoring device changes the detection threshold level of each of distance sensors 4-1 to 4-4 to change horizontal and vertical detection areas and a bearing resolution, determines the display position of an obstacle mark 16 from the distances to an obstacle 15 detected by the plurality of distance sensors 4-1 to 4-4, and amplitude information about the amplitude of a reflected wave from the obstacle, and overlays the obstacle mark 16 on the obstacle 15 by using an overlay unit 17, the vehicle rear view monitoring device improves the degree of positional precision of the overlay of the obstacle mark on the obstacle displayed on a captured image.

    摘要翻译: 因为车辆后视监视装置改变距离传感器4-1至4-4中的每一个的检测阈值水平以改变水平和垂直检测区域和方位分辨率,所以从距离的距离确定障碍物标记16的显示位置 由多个距离传感器4-1至4-4检测到的障碍物15以及关于来自障碍物的反射波的振幅的幅度信息,并且通过使用覆盖单元17覆盖障碍物15上的障碍物标记16,车辆 后视监视装置提高在拍摄图像上显示的障碍物上的障碍物标记的重叠的位置精度。

    SINGLE-PHASE VOLTAGE SOURCE AC-DC POWER CONVERTER AND THREE-PHASE VOLTAGE SOURCE AC-DC POWER CONVERTER
    42.
    发明申请
    SINGLE-PHASE VOLTAGE SOURCE AC-DC POWER CONVERTER AND THREE-PHASE VOLTAGE SOURCE AC-DC POWER CONVERTER 有权
    单相电压源AC-DC电源转换器和三相电压源AC-DC电源转换器

    公开(公告)号:US20100302825A1

    公开(公告)日:2010-12-02

    申请号:US12695836

    申请日:2010-01-28

    IPC分类号: H02M7/537

    CPC分类号: H02M7/5395 H02M7/53871

    摘要: The present invention is a single-phase voltage source AC-DC power converter and a three-phase voltage source AC-DC power converter. Each of the single-phase voltage source AC-DC power converter and the three-phase voltage source AC-DC power converter includes a voltage source AC-DC power converting circuit that converts power from a DC voltage source into AC power to output the AC power from an AC terminal; and target current producing means that includes a filter voltage command device and a voltage controller, the filter voltage command device generating a filter voltage command value that becomes a reference of the AC power output from the AC terminal, the AC output voltage at the AC terminal being input as an input signal to the voltage controller, the voltage controller integrating a difference between the filter voltage command value from the filter voltage command device and the AC output voltage at the AC terminal, the target current producing means outputting a PWM command such that the integration value of the difference between the filter voltage command value from the filter voltage command device and the AC output voltage at the AC terminal becomes zero.

    摘要翻译: 本发明是单相电压源AC-DC电力转换器和三相电压源AC-DC电力转换器。 每个单相电压源AC-DC电力转换器和三相电压源AC-DC电力转换器包括电压源AC-DC电力转换电路,其将来自DC电压源的电力转换为AC电力以输出AC 交流电源的电源; 以及包括滤波器电压指令装置和电压控制器的目标电流产生装置,所述滤波器电压指令装置产生成为从AC端子输出的AC电力的基准的滤波器电压指令值,AC端子处的AC输出电压 作为输入信号输入到电压控制器,电压控制器将来自滤波器电压指令装置的滤波器电压指令值之间的差异与AC端子处的AC输出电压进行积分,目标电流产生装置输出PWM命令,使得 来自滤波器电压指令装置的滤波器电压指令值与AC端子处的AC输出电压之间的差的积分值为零。

    Single-phase power conversion device and three-phase power conversion device
    43.
    发明授权
    Single-phase power conversion device and three-phase power conversion device 有权
    单相电力转换装置和三相电力转换装置

    公开(公告)号:US07184282B2

    公开(公告)日:2007-02-27

    申请号:US11368480

    申请日:2006-03-07

    IPC分类号: H02M1/12 H02M7/122

    摘要: To suppress a DC component in AC power in a power converter for converting DC power to AC power. DC power is converted to AC power by a converter 2, and the AC power is supplied to output terminals u1 and u2 via an inductor 3. The converter 2 is controlled based on an error Δ(t) between an output current ip(t) outputted from the converter 2 and a target current j(t) outputted from a target current generation means 110 as a target value for the output current ip(t), and a DC component VD in an output terminal voltage v(t) is detected by a voltage detection means 18. A DC component ID is suppressed by correcting a target current j(t) by a DC component suppression means 8. Also, a DC component in the AC power is suppressed to prevent biased magnification of a transformer 4 by calculating a correction amount jh(t) for correcting the target current j(t) from the difference between a first instantaneous value d1 of a load current is(t) flowing to a load 4 at a first time point t1 and a second instantaneous value d2 of the load current is(t) at a second time point t2 that is a half cycle after the first time point to correct the target current j(t).

    摘要翻译: 抑制用于将DC电力转换为AC电力的功率转换器中的AC电力中的DC分量。 通过转换器2将直流电力转换为交流电力,经由电感器3将交流电力供给到输出端子u 1,u 2。 基于从转换器2输出的输出电流i SUB(t)和从目标电流产生装置110输出的目标电流j(t)之间的误差Delta(t)来控制转换器2 作为输出电流i(t)的目标值,输出端子电压v(t)中的直流分量V SUB(D)由电压检测装置 18。 DC分量抑制装置8通过校正目标电流j(t)来抑制DC分量I SUB。 此外,通过计算用于从a的差异校正目标电流j(t)的校正量j H(t)来抑制AC电力中的DC分量,以防止变压器4的偏置放大 在第一时间点t 1处流入负载4的负载电流i S(t)的第一瞬时值d 1和负载电流i S的第二瞬时值d 2, 在第一时间点后的半周期的第二时间点t 2 /(t),以校正目标电流j(t)。

    CD package
    44.
    发明授权
    CD package 失效
    CD包

    公开(公告)号:US06168015A

    公开(公告)日:2001-01-02

    申请号:US09438678

    申请日:1999-11-12

    申请人: Hirokazu Shimizu

    发明人: Hirokazu Shimizu

    IPC分类号: B65D8530

    CPC分类号: G11B33/0427 G11B33/0494

    摘要: A CD package includes a CD tray for removably holding a CD, and a paper mount to which the CD tray is affixed. The CD tray is formed of paper produced from raw material other than wood pulp; specifically, paper produced from a combination of kenaf and bamboo fibers. The paper mount is formed of paper that contains kenaf and/or bagasse fibers in an amount of about 5-30% by weight and wood pulp as the, balance.

    摘要翻译: CD包包括用于可拆卸地固定CD的CD托盘和附着有CD托盘的纸托架。 CD托盘由除木浆以外的原料生产的纸形成; 具体来说,由洋麻和竹纤维组合生产的纸。 纸安装件由含有约5-30重量%的洋麻和/或甘蔗渣纤维的纸形成,木浆作为天平。

    Semiconductor laser structure including dual mounts having ridge and
groove engagement
    46.
    发明授权
    Semiconductor laser structure including dual mounts having ridge and groove engagement 失效
    半导体激光器结构包括具有脊和凹槽接合的双安装

    公开(公告)号:US4603419A

    公开(公告)日:1986-07-29

    申请号:US768144

    申请日:1985-08-22

    摘要: A mounting of semiconductor laser chip on a heat sink or metal mount is improved so as to enable high accuracy of position and direction. A heat sink or metal mount, on which a semiconductor laser chip is mounted, comprises two parts, namely a main mount or larger portion and a sub-mount or smaller portion. The semiconductor laser chip is soldered by a solder layer on the sub-mount utilizing a microscope so as to assure an accurate position and an accurate direction with respect to the sub-mount. Then, the sub-mount is soldered on the main mount by a solder layer with an accurate relation both in position and direction by engaging a linear ridge as a first engaging means provided on the upper face of the main mount with a straight groove and a rear end face as a second engaging means. As a result of the above-mentioned structure, accurate position and direction of the semiconductor laser chip with respect to the mount is easily obtainable with a high yield.

    摘要翻译: 提高半导体激光芯片在散热片或金属安装座上的安装,以实现高精度的位置和方向。 安装有半导体激光芯片的散热器或金属安装件包括两部分,即主安装件或更大部分以及副安装件或更小部件。 利用显微镜将半导体激光芯片通过焊接层焊接在子座上,以确保相对于子安装座的精确位置和准确的方向。 然后,通过将位于主要安装座的上表面上设置的第一接合装置的直线状脊线与直槽相啮合,通过焊接层将焊接层焊接在主安装座上,焊接层的位置和方向都精确, 后端面作为第二接合装置。 作为上述结构的结果,可以容易地以高产率获得半导体激光器芯片相对于安装座的精确位置和方向。

    Stem for semiconductor laser devices
    47.
    发明授权
    Stem for semiconductor laser devices 失效
    针对半导体激光器件

    公开(公告)号:US4488304A

    公开(公告)日:1984-12-11

    申请号:US583784

    申请日:1984-02-29

    CPC分类号: H01S5/02 H01S5/02236

    摘要: A stem for a semiconductor laser device of a terraced substrate structure which has a tilted active layer against flat parts of the substrate, the stem comprises a base plate and a heat sink block, a flat face of the heat sink block for bonding the semiconductor laser device thereonto is tilted with respect to a base face of the base plate; this stem has features that the polarization direction of the lased light from the semiconductor laser device can be set to be parallel to (or perpendicular to) the base face of the base plate, and therefore it becomes much easier to make adjustments related with the polarization direction of the lased light.

    摘要翻译: 一种用于梯形衬底结构的半导体激光器件的杆,其具有抵抗所述衬底的平坦部分的倾斜的有源层,所述杆包括基板和散热块,所述散热块的平坦表面用于接合所述半导体激光器 装置相对于基板的基面倾斜; 该杆具有使得来自半导体激光装置的带激光的偏振方向能够设定为与基板的基面平行(或垂直)的特征,因此与极化相关的调整变得容易一些 灯光方向。

    Terrace-shaped substrate semiconductor laser
    48.
    发明授权
    Terrace-shaped substrate semiconductor laser 失效
    露台形基板半导体激光器

    公开(公告)号:US4456999A

    公开(公告)日:1984-06-26

    申请号:US270352

    申请日:1981-06-04

    IPC分类号: H01S5/00 H01S5/223 H01S3/19

    CPC分类号: H01S5/2238

    摘要: A terrace-substrate laser is improved by forming a stripe-shaped impurity diffused current-injection region (27) from the cap layer (25) at least so as to reach the oblique lasing region (231) of the active layer (23), so that the corner part of the current injection region (27) touches the lasing region (231); thereby current injection efficiency to the lasing region is highly improved and the injected current is effectively limited in the oblique lasing region even when a large current is injected, and furthermore, a threshold current can be greatly reduced. This laser can perform a stable fundamental transverse mode oscillation even at a large current operation.

    摘要翻译: 至少通过从盖层(25)形成条形杂质扩散电流注入区域(27)至达到有源层(23)的倾斜激光区域(231)来改善平台 - 衬底激光器, 使得电流注入区域(27)的拐角部分接触激光区域(231); 因此即使在注入大电流的情况下,对激光区域的电流注入效率高度提高,并且在斜激光区域有效地限制注入电流,此外,可以大大降低阈值电流。 该激光器即使在大电流操作下也可以执行稳定的基本横模振荡。

    Terraced substrate semiconductor laser
    49.
    发明授权
    Terraced substrate semiconductor laser 失效
    梯形衬底半导体激光器

    公开(公告)号:US4392227A

    公开(公告)日:1983-07-05

    申请号:US224821

    申请日:1981-01-13

    摘要: In a terraced substrate type semiconductor laser comprising a semiconductor substrate (11) having a step (T) on its principal face, an active layer (13) with an oblique central region (131), defined between two bendings, as stripe-shaped lasing region near the foot of the step part (T) of the substrate (11), and a clad layer (14) formed on the active layer (13),The device is characterized by comprising a current injection region (22) which is formed by diffusing an impurity, in a manner that a diffusion front corner (221) penetrate the clad layer (14) and contacts the oblique lasing region (131) thereby to form the current injection path (221) very narrow and closely to the central part of the stripe-shaped lasing region (13), thereby effectively confining the injected current to the lasing region (131) and hence attaining very low threshold current and very high external differential quantum efficiency.

    摘要翻译: 在包括在其主面上具有台阶(T)的半导体衬底(11)的梯形衬底型半导体激光器中,具有定义在两个弯曲部之间的倾斜中心区域(131)的有源层(13)作为条形激光 (11)的台阶部(T)的脚附近的区域,以及形成在有源层(13)上的包层(14)。该器件的特征在于包括形成有电流注入区域(22)的电流注入区域 通过以扩散前角(221)穿透包覆层(14)并与斜激光区域(131)接触的方式扩散杂质,从而形成非常窄且紧密相对于中心部分的电流注入路径(221) 由此有效地将注入的电流限制到激光区域(131),从而获得非常低的阈值电流和非常高的外部微分量子效率。

    Terraced substrate semiconductor laser
    50.
    发明授权
    Terraced substrate semiconductor laser 失效
    梯形衬底半导体激光器

    公开(公告)号:US4360920A

    公开(公告)日:1982-11-23

    申请号:US185922

    申请日:1980-09-10

    CPC分类号: H01S5/2238

    摘要: In a semiconductor laser a semiconductor substrate has a terrace structure in a manner to have an upper face, a lower face, and a step part disposed between the upper and lower faces. A clad layer is formed on the semiconductor substrate having an upper part, a lower part, and a central part. The upper part is on the upper face and the step part. The lower part is on the lower face and the central part connecting the upper and lower parts and is thicker than the upper and lower parts in a manner that a step-shaped downward-bending surface of the central part is located above the lower face. An active layer formed on the clad layer includes an upper lateral part, a lower lateral part, a center part connecting the upper and lower lateral parts, with a lasing region being a part of the upper lateral part which is near a bending part of the step-shaped downward-bending surface.

    摘要翻译: 在半导体激光器中,半导体衬底具有以上表面,下表面和设置在上表面和下表面之间的台阶部分的方式设置的露台结构。 在具有上部,下部和中心部的半导体基板上形成包覆层。 上部位于上表面和台阶部分。 下部位于下表面,中央部分连接上部和下部,并且比中部的台阶向下弯曲表面位于下表面上方更厚于上部和下部。 形成在包层上的有源层包括上侧部分,下侧部分,连接上下侧部分的中心部分,激光区域是上侧部分的靠近弯曲部分的一部分 台阶向下弯曲面。