Rotary developing device having adjustably mounted developing units
    41.
    发明授权
    Rotary developing device having adjustably mounted developing units 失效
    具有可调节安装的显影单元的旋转显影装置

    公开(公告)号:US6104898A

    公开(公告)日:2000-08-15

    申请号:US373981

    申请日:1999-08-16

    IPC分类号: G03G15/01 G03G15/08

    CPC分类号: G03G15/0126 G03G2215/0177

    摘要: A rotary developing device which facilitates a positional adjustment of developing units and prevents the developing units from being shifted even when they are used for a long period. Pins protruding from a revolver are inserted into elongated holes formed in developing units so that developing units are held in such a manner that the developing units are movable relative to the revolver. By mounting a spacer between the elongated hole and the pin, the positional adjustment of the photosensitive drum and the tracking roller is completed. Furthermore, a plurality of spacers which differ in thickness are prepared and by merely selectively mounting an appropriate spacer, the position adjustment of the tracking roller is completed.

    摘要翻译: 一种旋转显影装置,其便于显影单元的位置调整,并且即使长时间使用也可防止显影单元的移位。 从左轮手枪突出的销钉插入形成在显影单元中的长孔中,使得显影单元被保持为使得显影单元相对于左轮可移动。 通过在长孔和销之间安装间隔件,完成感光鼓和跟踪辊的位置调整。 此外,准备了多个不同厚度的间隔件,并且通过仅选择性地安装适当的间隔件,完成了跟踪辊的位置调整。

    Alumina particles having high dispersibility and plasticity
    42.
    发明授权
    Alumina particles having high dispersibility and plasticity 失效
    氧化铝颗粒具有高分散性和可塑性

    公开(公告)号:US06015456A

    公开(公告)日:2000-01-18

    申请号:US697470

    申请日:1996-08-23

    摘要: Alumina particles having high dispersibility and plasticity, at least on the surface of which a phosphoric acid or phosphate is present and suitable for use as a material for pigments for paints, precision abrasives or ceramics. The alumina particles are produced by adding a crystallization inhibitor containing at least phosphate ion to aluminum hydroxide or alumina hydrate and then conducting a hydrothermal synthesis treatment. The amount of the phosphate ion to be added is in the range of 3.0.times.10.sup.-3 to 2.5.times.10.sup.-2 mol per mol of aluminum hydroxide or alumina hydrate. The particle size of aluminum hydroxide or alumina hydrate is 0.1 to 5.0 .mu.m. The hydrothermal synthesis is preferably conducted at 350.degree. C. or above under a pressure of 50 to 200 atm and at a temperature elevation rate of 50.degree. C./min to 0.3.degree. C./min. The thus obtained alumina is .alpha.-alumina in the form of hexagonal plate single crystal having a particle size of 0.2 to 15 .mu.m, an aspect ratio of 15 to 50 and an isoelectric point at which the zeta-potential is 0 of pH 4 to 8.

    摘要翻译: 氧化铝颗粒具有高分散性和可塑性,至少在其表面上存在磷酸或磷酸盐,并且适合用作涂料,精密磨料或陶瓷颜料的材料。 氧化铝颗粒通过向氢氧化铝或氧化铝水合物中加入至少含有磷酸根离子的结晶抑制剂,然后进行水热合成处理来制备。 磷酸根离子的添加​​量相对于每摩尔氢氧化铝或氧化铝水合物为3.0×10 -3〜2.5×10 -2摩尔。 氢氧化铝或氧化铝水合物的粒径为0.1〜5.0μm。 水热合成优选在50〜200atm的压力和50℃/分钟〜0.3℃/分钟的升温速度下在350℃以上进行。 由此获得的氧化铝是粒径为0.2至15μm,纵横比为15至50的六方板单晶形式的α-氧化铝,ζ电位为0的等电点为pH4至 8。

    Method of and apparatus for performing continuous hydrothermal synthesis
    43.
    发明授权
    Method of and apparatus for performing continuous hydrothermal synthesis 失效
    进行连续水热合成的方法和装置

    公开(公告)号:US5910298A

    公开(公告)日:1999-06-08

    申请号:US779351

    申请日:1997-01-06

    摘要: A continuous hydrothermal synthesis method which comprises pressurizing and heating a material slurry below a saturated vapor temperature or pressurizing a material slurry at normal temperature, pressurizing and heating an aqueous liquid above the saturated vapor temperature, atomizing and mixing the slurry and the aqueous liquid, effecting hydrothermal synthesis in a reaction section above the saturated vapor temperature, cooling the reaction product and taking out the product while retaining the pressurized state in the system by alternately opening and closing shut-off valves provided above and below a product discharging section or through a thin pipe provided in the product discharging section. The method is performed using an apparatus comprising heating-pressurizing sections respectively connected to a material slurry feeding section and an aqueous liquid feeding section, an atomizing-mixing section and a reaction section provided after these feeding sections, and a product discharging section.

    摘要翻译: 一种连续的水热合成方法,其特征在于,在饱和蒸气温度以下加压和加热材料浆料或在常温下加压材料浆料,对饱和蒸汽温度以上的水性液体进行加压加热,雾化并混合浆料和水性液体, 在高于饱和蒸汽温度的反应段中进行水热合成,冷却反应产物并取出产物,同时通过交替地打开和关闭设置在产品排放部分上方和下方的截止阀,或通过薄的 产品排放部分设有管道。 该方法使用包括分别连接到材料浆料供给部分和水性液体供给部分的加热加压部分,设置在这些进料部分之后的雾化混合部分和反应部分的装置以及产品排出部分进行。

    Fluorosilicone rubber composition
    46.
    发明授权
    Fluorosilicone rubber composition 失效
    氟硅橡胶组合物

    公开(公告)号:US4988758A

    公开(公告)日:1991-01-29

    申请号:US222212

    申请日:1988-07-21

    CPC分类号: C08K5/14 C08G77/24 C08L83/08

    摘要: The fluorine-substituted organopolysiloxane as the principal ingredient of the inventive silicone rubber composition has vinyl groups to serve as the cross-linking points at the molecular chain terminals while at least the penultimate siloxane unit or the silicon atom adjacent to the terminal silicon atom has no fluorine-substituted hydrocarbon group bonded to the silicon atom. Being freed from the steric hindrance due to the bulky fluorine-substituted hydrocarbon group bonded to the adjacent silicon atom, the vinyl group bonded to the terminal silicon atom can pertain to the cross-linking reaction much easier than otherwise so that the silicone rubber composition of the invention containing an organic peroxide or a combination of an organohydrogenpolysiloxane and a platinum catalyst as a curing agent can be rapidly cured to give a cured silicone rubber article having excellent resistance against oils and organic solvents as well as mechanical properties.

    摘要翻译: 作为本发明的硅橡胶组合物的主要成分的氟取代的有机聚硅氧烷具有乙烯基作为分子链末端的交联点,而至少倒数第二硅氧烷单元或与末端硅原子相邻的硅原子没有 与硅原子键合的氟取代烃基。 由于与相邻的硅原子键合的大体积的氟取代烃基而消除空间位阻,与末端硅原子键合的乙烯基可以与其它方式相容容易,因此硅橡胶组合物 包含有机过氧化物或作为固化剂的有机氢聚硅氧烷和铂催化剂的组合的本发明可以快速固化,得到具有优异的耐油性和有机溶剂性的固化的硅橡胶制品以及机械性能。

    Method for manufacturing semiconductor device
    49.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US4497665A

    公开(公告)日:1985-02-05

    申请号:US455327

    申请日:1983-01-03

    申请人: Takeshi Fukuda

    发明人: Takeshi Fukuda

    摘要: In a method of fabricating a semiconductor device having a V-groove insulating isolation structure with polycrystalline silicon filled in the groove of which the internal surface is covered with an insulating film of silicon dioxide, the method according to this invention comprises the steps of selectively ion implanting an impurity material into a desired region of the polycrystalline silicon layer in order to give to this region a desired different type of electric conductivity relative to the polycrystalline silicon layer followed by a selective annealing by an energy beam such as a laser of a desired part of the polycrystalline silicon layer including the region into which the impurity material has been ion implanted.

    摘要翻译: 在制造半导体器件的方法中,所述半导体器件具有填充在沟槽中的多晶硅的V沟绝缘隔离结构,其内表面被二氧化硅的绝缘膜覆盖,根据本发明的方法包括以下步骤:选择性离子 将杂质材料注入到多晶硅层的所需区域中,以便给予该区域相对于多晶硅层所需的不同类型的导电性,然后通过诸如所需部分的激光的能量束进行选择性退火 包括已经离子注入杂质材料的区域的多晶硅层。

    Semiconductor device and method of manufacturing the same
    50.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US4409609A

    公开(公告)日:1983-10-11

    申请号:US244952

    申请日:1981-03-18

    申请人: Takeshi Fukuda

    发明人: Takeshi Fukuda

    摘要: In a method of fabricating a semiconductor device having a V-groove insulating isolation structure with polycrystalline silicon filled in the groove of which internal surface is covered with an insulating film of silicon dioxide, the method according to this invention comprises the steps of selectively ion implanting an impurity material into a desired region of the polycrystalline silicon layer in order to give to this region a desired different type of electric conductivity relative to the polycrystalline silicon layer, followed by a selective annealing by an energy beam, such as laser, of a desired part of the polycrystalline silicon layer, including the region into which the impurity material has been ion implanted.

    摘要翻译: 在制造半导体器件的方法中,所述半导体器件具有填充在其内表面被二氧化硅绝缘膜覆盖的沟槽中的多晶硅的V沟绝缘隔离结构,根据本发明的方法包括以下步骤:选择性离子注入 将杂质材料注入到多晶硅层的所需区域中,以便向该区域提供相对于多晶硅层所需的不同类型的导电性,然后通过诸如激光的能量束进行选择性退火,所需能量束 多晶硅层的一部分,包括杂质材料已被离子注入的区域。