摘要:
A rotary developing device which facilitates a positional adjustment of developing units and prevents the developing units from being shifted even when they are used for a long period. Pins protruding from a revolver are inserted into elongated holes formed in developing units so that developing units are held in such a manner that the developing units are movable relative to the revolver. By mounting a spacer between the elongated hole and the pin, the positional adjustment of the photosensitive drum and the tracking roller is completed. Furthermore, a plurality of spacers which differ in thickness are prepared and by merely selectively mounting an appropriate spacer, the position adjustment of the tracking roller is completed.
摘要:
Alumina particles having high dispersibility and plasticity, at least on the surface of which a phosphoric acid or phosphate is present and suitable for use as a material for pigments for paints, precision abrasives or ceramics. The alumina particles are produced by adding a crystallization inhibitor containing at least phosphate ion to aluminum hydroxide or alumina hydrate and then conducting a hydrothermal synthesis treatment. The amount of the phosphate ion to be added is in the range of 3.0.times.10.sup.-3 to 2.5.times.10.sup.-2 mol per mol of aluminum hydroxide or alumina hydrate. The particle size of aluminum hydroxide or alumina hydrate is 0.1 to 5.0 .mu.m. The hydrothermal synthesis is preferably conducted at 350.degree. C. or above under a pressure of 50 to 200 atm and at a temperature elevation rate of 50.degree. C./min to 0.3.degree. C./min. The thus obtained alumina is .alpha.-alumina in the form of hexagonal plate single crystal having a particle size of 0.2 to 15 .mu.m, an aspect ratio of 15 to 50 and an isoelectric point at which the zeta-potential is 0 of pH 4 to 8.
摘要:
A continuous hydrothermal synthesis method which comprises pressurizing and heating a material slurry below a saturated vapor temperature or pressurizing a material slurry at normal temperature, pressurizing and heating an aqueous liquid above the saturated vapor temperature, atomizing and mixing the slurry and the aqueous liquid, effecting hydrothermal synthesis in a reaction section above the saturated vapor temperature, cooling the reaction product and taking out the product while retaining the pressurized state in the system by alternately opening and closing shut-off valves provided above and below a product discharging section or through a thin pipe provided in the product discharging section. The method is performed using an apparatus comprising heating-pressurizing sections respectively connected to a material slurry feeding section and an aqueous liquid feeding section, an atomizing-mixing section and a reaction section provided after these feeding sections, and a product discharging section.
摘要:
Compositions comprising certain macrolides are disclosed which are useful in methods for the treatment of reversible obstructive airway diseases, particularly asthma.
摘要:
The fluorine-substituted organopolysiloxane as the principal ingredient of the inventive silicone rubber composition has vinyl groups to serve as the cross-linking points at the molecular chain terminals while at least the penultimate siloxane unit or the silicon atom adjacent to the terminal silicon atom has no fluorine-substituted hydrocarbon group bonded to the silicon atom. Being freed from the steric hindrance due to the bulky fluorine-substituted hydrocarbon group bonded to the adjacent silicon atom, the vinyl group bonded to the terminal silicon atom can pertain to the cross-linking reaction much easier than otherwise so that the silicone rubber composition of the invention containing an organic peroxide or a combination of an organohydrogenpolysiloxane and a platinum catalyst as a curing agent can be rapidly cured to give a cured silicone rubber article having excellent resistance against oils and organic solvents as well as mechanical properties.
摘要:
A photosensing system is described. Light rays to be sensed is incident on a photosensitive semiconductor device which allows much current to pass therethrough during receiving the incident light and which passes a little current when there is no incident light. The current passing through the semiconductor device is accumulated in a suitable storage means. The accumulated charge is detected, in order to judge the existence or the absence of the incident light, a certain time period after the pulsed signal is outputted.
摘要:
The silicone rubber composition comprises, in addition to the conventional ingredients of a high-polymeric diorganopolysiloxane and a reinforcing silica filler, a specific phosphorus-containing organic compound, such as phosphinates, phosphonates and phosphates, in a limited amount. By virtue of this unique ingredient, the composition can give a cured silicone rubber product having greatly improved resistance against dynamic fatigue.
摘要:
In a method of fabricating a semiconductor device having a V-groove insulating isolation structure with polycrystalline silicon filled in the groove of which the internal surface is covered with an insulating film of silicon dioxide, the method according to this invention comprises the steps of selectively ion implanting an impurity material into a desired region of the polycrystalline silicon layer in order to give to this region a desired different type of electric conductivity relative to the polycrystalline silicon layer followed by a selective annealing by an energy beam such as a laser of a desired part of the polycrystalline silicon layer including the region into which the impurity material has been ion implanted.
摘要:
In a method of fabricating a semiconductor device having a V-groove insulating isolation structure with polycrystalline silicon filled in the groove of which internal surface is covered with an insulating film of silicon dioxide, the method according to this invention comprises the steps of selectively ion implanting an impurity material into a desired region of the polycrystalline silicon layer in order to give to this region a desired different type of electric conductivity relative to the polycrystalline silicon layer, followed by a selective annealing by an energy beam, such as laser, of a desired part of the polycrystalline silicon layer, including the region into which the impurity material has been ion implanted.